Infineon Technologies CY62136EV30LL-45BVXI

Overview

CY62136EV30LL-45BVXI from Infineon Technologies (formerly Cypress) is a 2-Mbit (128K × 16) CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and ultra-low standby current (1 µA typical). It features byte-wide I/O control via BHE/ BLE, automatic power-down on deselect, and is packaged in a Pb-free 48-ball VFBGA for space-constrained portable memory applications including cellular handsets and handheld instrumentation.

For engineers reviewing the CY62136EV30LL-45BVXI datasheet, CY62136EV30LL-45BVXI pinout, CY62136EV30LL-45BVXI application, or CY62136EV30LL-45BVXI equivalent, key selection criteria include industrial temperature support (–40°C to +85°C), dual-byte enable timing, low-voltage data retention (1.0 V), and VFBGA package thermal resistance (θJA = 54°C/W).

Technical Context

This SRAM implements a synchronous, non-volatile-retentive memory array organized as 128K words × 16 bits, with independent high- and low-byte enables (BHE/BLE) enabling partial-word writes without read-modify-write cycles. Its CMOS architecture supports full static operation - no refresh required - and integrates automatic CE-driven power-down logic that reduces ICC to ≤7 µA when CE is HIGH and address lines are stable.

Timing behavior is defined by strict AC parameters including tRC = 45 ns, tDOE = 22 ns, and tHZOE = 18 ns, all guaranteed over the full industrial voltage (2.2–3.6 V) and temperature (–40°C to +85°C) range. Input/output pins enter high-impedance state under four conditions: CE HIGH, OE HIGH, both BHE and BLE HIGH, or during write (CE LOW & WE LOW).

Key Specifications

Pinout & Package

The CY62136EV30LL-45BVXI is supplied in a Pb-free 48-ball very fine ball grid array (VFBGA) package measuring 6.0 mm × 8.0 mm with 0.5 mm ball pitch. Pin functions are validated per Cypress Document No. 38-05569 Rev. *J, Figure 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS61LV25616AL-10TLI and AS6C4008-55TIN, the CY62136EV30LL-45BVXI uniquely combines industrial temperature range, ultra-low 1 µA standby, dual-byte enables, and VFBGA packaging - making it optimal for compact, battery-sensitive, and thermally demanding embedded designs.

Availability

CY62136EV30LL-45BVXI is available at Aetrix Electronics and suitable for cellular handset memory, industrial HMI buffering, portable medical instrumentation, and automotive telematics log storage requiring stable component supply across extended product lifecycles.

Supply support for CY62136EV30LL-45BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions following its acquisition of Cypress Semiconductor in 2020.

The CY62136EV30LL belongs to Infineon's MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power portable electronics where extended battery runtime and compact packaging are critical design constraints.

FAQ

What is the maximum operating frequency supported by CY62136EV30LL-45BVXI?

The device has a 45 ns access time, corresponding to a maximum reliable read/write cycle rate of approximately 22.2 MHz. It is a static RAM and does not require a clock signal; timing is governed by setup/hold specifications relative to CE, OE, WE, and address transitions - not by an external clock frequency.

Can CY62136EV30LL-45BVXI operate at 2.5 V and still meet all AC specifications?

Yes - the device is fully specified across 2.2 V to 3.6 V, including all AC timing parameters (tRC, tAA, tDOE, etc.) and DC characteristics (VIH/VIL, ICC, ISB) at 2.5 V. The 45 ns access time is guaranteed at VCC = 2.5 V and TA = 85°C per the datasheet's "Electrical Characteristics Over the Operating Range" table.

Does this SRAM require an external refresh controller or periodic access to retain data?

No - CY62136EV30LL-45BVXI is a true static RAM with no refresh requirement. Data retention is maintained indefinitely as long as VCC ≥ 1.0 V and CE is held HIGH (standby mode), or during active operation. Internal latches hold state without clock or timing intervention.

How is the 48-ball VFBGA pinout verified for solder paste stencil design?

The pinout is confirmed per Cypress Document No. 38-05569 Rev. *J, Figure 1 ("48-ball VFBGA pinout, top view"), which defines ball positions A1–H6 with mechanical dimensions, pad layout, and polarity marking (ball A1 located at top-left corner adjacent to chamfered corner). IPC-7351-compliant footprint data is available from Infineon's official package drawings.