Infineon Technologies CY62136EV30LL-45ZSXI
- Part No.:
- CY62136EV30LL-45ZSXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY62136EV30LL-45ZSXI.pdf
- Description:
- IC SRAM 2MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:

- Shipping:

Inventory:480
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Product details
Overview
CY62136EV30LL-45ZSXI from Infineon Technologies (formerly Cypress) is a 2-Mbit (128K × 16) CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and ultra-low standby current (max 7 µA). It supports byte-wide write control via BHE/ BLE, automatic power-down on deselect, and operates across –40°C to +85°C for industrial embedded systems.
For engineers reviewing the CY62136EV30LL-45ZSXI datasheet, CY62136EV30LL-45ZSXI pinout, CY62136EV30LL-45ZSXI application, or CY62136EV30LL-45ZSXI equivalent, key selection criteria include VFBGA-48 vs. TSOP II-44 package compatibility, MoBL® low-power timing behavior, CE/OE/BHE/ BLE control logic, and data retention down to 1.0 V.
Technical Context
This SRAM implements a synchronous, non-volatile-retentive memory array organized as 128K words × 16 bits, with independent high- and low-byte enable (BHE/ BLE) for partial-word writes. All control inputs-CE, OE, WE, BHE, BLE-use CMOS-compatible thresholds and support tri-state I/O0–I/O15 during deselect or disable.
It features dual power-down modes: ISB1/ISB2 (≤7 µA at VCC = 3.6 V) triggered by CE HIGH and stable address bus, plus ICCDR ≤3 µA at VCC = 1.0 V for extended data retention. Timing is fully specified at 45 ns cycle time with tDOE = 22 ns and tHZOE = 18 ns.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 2 Mbit (128K × 16), enabling compact 16-bit data path buffering without external multiplexing |
| Access time | 45 ns max, supporting real-time microcontroller interface at up to ~22 MHz sustained read/write cycles |
| Supply voltage | 2.2 V–3.6 V, compatible with Li-ion battery discharge profiles and mixed-voltage SoC domains |
| Standby current | Max 7 µA at 3.6 V, reducing system sleep power by >99% versus active mode (2 mA typical) |
| Data retention | Operational down to 1.0 V VCC, allowing graceful shutdown and backup in brown-out conditions |
| Operating temperature | –40°C to +85°C industrial grade, validated for automotive infotainment head units and industrial HMIs |
| Package options | 48-ball VFBGA (6 mm × 8 mm) and 44-pin TSOP II (10 mm × 20 mm), both RoHS-compliant and Pb-free |
Pinout & Package
The CY62136EV30LL-45ZSXI is offered in a 48-ball very fine ball grid array (VFBGA) package with 0.5 mm pitch, optimized for space-constrained portable designs. Pin functions are validated per Cypress Document No. 38-05569 Rev. *J, Figure 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address inputs | 17-bit address bus supporting full 128K-word decoding; A16 enables 256K-word expansion in higher-density variants |
| I/O0–I/O15 | Bidirectional data bus | 16-bit parallel interface with automatic high-impedance state when CE HIGH, OE HIGH, or BHE/ BLE HIGH |
| CE | Chip Enable | Active-low global enable; drives automatic power-down when HIGH, reducing ICC to ≤7 µA |
| OE | Output Enable | Active-low read strobe; controls output driver enable independently of CE and WE |
| WE | Write Enable | Active-low write strobe; initiates write when CE LOW and WE LOW, with timing referenced to terminating edge |
| BHE / BLE | Byte High/Low Enable | Independent active-low enables for I/O8–I/O15 and I/O0–I/O7; allow partial-word writes without masking logic |
| VCC / VSS | Power / Ground | Single 2.2–3.6 V supply; decoupling required per layout guidelines to maintain 45 ns timing margin |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® ultra-low power architecture | Reduces active current to 2 mA at 1 MHz and standby to ≤7 µA, extending battery life in handheld devices |
| Byte-selectable write capability | Enables efficient 8-bit or 16-bit writes via independent BHE/ BLE control, eliminating need for external byte-lane gating |
| Automatic CE power-down | Enters sub-µA retention state when CE is held HIGH and address bus stable, simplifying power management firmware |
| 1.0 V data retention voltage | Preserves memory contents during deep sleep or backup battery operation, critical for real-time clock and configuration storage |
| Pb-free VFBGA and TSOP II packages | Supports high-density PCB layouts (VFBGA) and legacy socket compatibility (TSOP II) with full RoHS compliance |
Applications
| Portable Medical Monitor | Industrial PLC HMI |
|---|---|
Use Scenario: Battery-powered ECG waveform buffer storing 30 seconds of 16-bit sampled data between wireless uploads. IC Role / Device Role / Timing Role: Primary data scratchpad SRAM interfaced directly to ARM Cortex-M4 ADC DMA engine. Use Value: 45 ns access ensures zero-wait-state transfers at 20 MHz bus clock; 7 µA standby extends 2000 mAh battery life to >72 hours in monitoring mode. | Use Scenario: Local display controller caching UI bitmaps and touch coordinate history in factory-floor HMIs. IC Role / Device Role / Timing Role: Dual-port accessible frame buffer memory mapped into MCU's external bus interface. Use Value: Byte-enable support allows efficient partial-screen updates; industrial temp range guarantees reliability in uncooled enclosures. |
| Automotive Infotainment Head Unit | Smart Energy Meter Data Logger |
Use Scenario: Storing decoded audio frames and navigation map tiles during GPS signal loss or Bluetooth streaming interruption. IC Role / Device Role / Timing Role: Low-voltage SRAM co-located with audio DSP, powered from 3.3 V domain with brown-out detection. Use Value: 1.0 V data retention preserves last-known position and audio buffer during ignition cycling; VFBGA footprint minimizes board area. | Use Scenario: Capturing 15-minute interval energy consumption snapshots across three phases for local analysis before WAN upload. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM holding metering registers and firmware update staging area. Use Value: Automatic CE power-down cuts background draw to <10 µW during idle intervals; TSOP II package enables easy rework in meter production. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar 2-Mbit SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS62WV12816BLL-45NLI | 45 ns access, 2.5–3.6 V supply, 128K × 16 organization; no BHE/ BLE - uses UB/LB instead | Requires level-shifting for 2.2 V systems; lacks 1.0 V data retention | Select if interfacing with legacy 2.5 V-only controllers and board layout already accommodates UB/LB pinout |
| AS6C4008-45ZIN | 45 ns access, 2.7–3.6 V supply, same 128K × 16 config; 10 µA max ISB, no data retention spec below 2.0 V | Higher standby current; narrower voltage window limits use in wide-input DC-DC designs | Prefer for cost-sensitive consumer electronics where 2.7–3.6 V rail stability is guaranteed and retention not required |
Compared with IS62WV12816BLL-45NLI and AS6C4008-45ZIN, CY62136EV30LL-45ZSXI uniquely supports 2.2 V operation, 1.0 V data retention, and true independent byte enables-making it optimal for battery-backed, mixed-voltage, and industrial-grade designs requiring robust low-power behavior.
Availability
CY62136EV30LL-45ZSXI is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC HMIs, automotive infotainment head units, and smart energy meter data loggers requiring stable component supply across extended temperature and voltage ranges.
Supply support for CY62136EV30LL-45ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-performance memory portfolio, including MoBL® SRAMs, with global manufacturing, quality, and support infrastructure.
This device belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power portable and battery-operated applications where extended runtime and voltage flexibility are critical design constraints.
FAQ
What is the minimum VCC required to retain data in CY62136EV30LL-45ZSXI?
Data retention is guaranteed down to VCC = 1.0 V when CE is held HIGH and inputs are at valid CMOS levels. At this voltage, ICCDR remains ≤3 µA, enabling long-term storage during battery backup or brown-out conditions without external capacitors or supercaps.
Does CY62136EV30LL-45ZSXI support true 8-bit write operations?
Yes-via independent Byte High Enable (BHE) and Byte Low Enable (BLE) inputs. When only BLE is LOW, I/O0–I/O7 are written; when only BHE is LOW, I/O8–I/O15 are written. This eliminates need for external byte masking logic or software bit-banding.
Can CY62136EV30LL-45ZSXI be used with a 2.5 V microcontroller without level shifters?
Yes-the device accepts VIH ≥ 1.8 V (at VCC = 2.2–2.7 V) and VIL ≤ 0.6 V, matching standard 2.5 V CMOS logic thresholds. Its 2.2–3.6 V supply range allows direct connection to 2.5 V I/O domains without translation circuitry.
What is the thermal resistance of the 48-ball VFBGA package?
The 48-ball VFBGA package has ΘJA = 54 °C/W (junction-to-ambient, still air, on 4-layer PCB) and ΘJC = 12 °C/W (junction-to-case), enabling reliable operation up to +85°C ambient without forced airflow in typical embedded enclosures.
CY62136EV30LL-45ZSXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 2Mbit
- Memory Organization:
- 128K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY62136EV30LL-45ZSXI FAQ
1.How can I place an order for CY62136EV30LL-45ZSXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62136EV30LL-45ZSXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62136EV30LL-45ZSXI reliable?
The price and inventory of CY62136EV30LL-45ZSXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62136EV30LL-45ZSXI is usually 5 days.
3.What payment methods are accepted for CY62136EV30LL-45ZSXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62136EV30LL-45ZSXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62136EV30LL-45ZSXI?
CY62136EV30LL-45ZSXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62136EV30LL-45ZSXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62136EV30LL-45ZSXI?
For technical support, including CY62136EV30LL-45ZSXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62136EV30LL-45ZSXI requirements.
6.How does Aetrix verify that CY62136EV30LL-45ZSXI is sourced from the original manufacturer or authorized distributors?
All CY62136EV30LL-45ZSXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62136EV30LL-45ZSXI meets industry standards.
7.What is the process for return or replacement of CY62136EV30LL-45ZSXI?
All CY62136EV30LL-45ZSXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62136EV30LL-45ZSXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62136EV30LL-45ZSXI part is unused and in its original packaging.
Return procedure for CY62136EV30LL-45ZSXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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