Infineon Technologies CY62136EV30LL-45ZSXIT

Overview

CY62136EV30LL-45ZSXIT from Infineon Technologies (formerly Cypress) is a 2-Mbit (128K × 16) low-power CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and ultra-low standby current (1 µA typical). It supports byte-level write control via BHE/ BLE and automatic power-down when deselected - designed for battery-sensitive portable systems including cellular handsets and handheld medical devices.

For engineers reviewing the CY62136EV30LL-45ZSXIT datasheet, CY62136EV30LL-45ZSXIT pinout, CY62136EV30LL-45ZSXIT application, or CY62136EV30LL-45ZSXIT equivalent, key selection criteria include industrial temperature support (–40°C to +85°C), VFBGA-48 package compatibility, MoBL® low-active-power architecture, and CE/OE/BHE/ BLE timing compliance per Rev. *J specification.

Technical Context

The device implements a full CMOS SRAM array organized as 128K words × 16 bits, with independent high- and low-byte enable (BHE/ BLE) for selective 8-bit writes. Its logic block integrates address decoding, sense amplifiers, and data drivers with tri-state I/O control driven by CE, OE, BHE, and BLE states.

Automatic power-down activates when CE is HIGH and all inputs are held at valid CMOS levels, reducing ICC to ≤7 µA. Read/write operations require precise setup/hold timing relative to CE, WE, OE, and byte enables - with tAA = 45 ns, tDOE = 22 ns, and tHZOE ≤ 18 ns - ensuring deterministic interface behavior in synchronous memory subsystems.

Key Specifications

Pinout & Package

Supplied in Pb-free 48-ball Very Fine Ball Grid Array (VFBGA) package with 0.5 mm pitch, footprint compatible with JEDEC MO-276AB. Pinout supports standard SRAM bus interface with dedicated address (A0–A16), data (I/O0–I/O15), and control (CE, OE, WE, BHE, BLE) terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV12816BLL-45NLI and AS6C4008-45TIN, CY62136EV30LL-45ZSXIT uniquely delivers byte-select capability, 2.2 V operation, and VFBGA-48 packaging - making it the sole choice for space-constrained, battery-operated designs needing partial-word writes and extended temperature compliance.

Availability

CY62136EV30LL-45ZSXIT is available at Aetrix Electronics and suitable for cellular handset baseband, portable medical monitors, and industrial PLC I/O modules requiring stable component supply, long-term lifecycle assurance, and Pb-free manufacturing compliance.

Supply support for CY62136EV30LL-45ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and now owns and supports the MoBL® SRAM portfolio, delivering high-reliability semiconductor solutions for automotive, industrial, and IoT markets.

This part belongs to the MoBL® (More Battery Life™) Static RAM product line - engineered specifically for ultra-low-power portable electronics where extended battery life, fast access, and industrial temperature resilience are mandatory design requirements.

FAQ

What is the maximum clock frequency supported for read/write cycles?

CY62136EV30LL-45ZSXIT does not use a clock signal - it is an asynchronous SRAM. Maximum effective throughput is determined by access time (45 ns) and cycle time (45 ns), enabling up to ~22.2 MHz sustained random access rate. Timing is controlled solely by CE, OE, WE, and byte enable edges per the switching characteristics table in Rev. *J datasheet.

Can this SRAM retain data at voltages below 2.2 V?

Yes - data retention is guaranteed down to 1.0 V VCC (VDR), with ICCDR ≤ 3 µA at that level. This allows the device to maintain memory contents during deep-sleep modes where system supply is reduced to extend battery life, provided CE remains HIGH and inputs are held at valid logic levels.

Is the 48-ball VFBGA package RoHS and REACH compliant?

Yes - CY62136EV30LL-45ZSXIT is manufactured as Pb-free per JEDEC J-STD-609 Category 1, with NiPdAu surface finish on solder balls. Full RoHS Directive 2011/65/EU and REACH SVHC compliance documentation is available through Infineon's product change notifications and material declarations portal.

How does automatic power-down differ from standby mode?

Automatic power-down is a hardware feature triggered when CE is HIGH and all control inputs (BHE, BLE, OE, WE) are held at valid CMOS levels - reducing ICC to ≤7 µA without software intervention. Standby mode is the functional state entered during that condition; both terms refer to the same low-power operational state defined by ISB2 in the datasheet.