Infineon Technologies CY62136FV30LL-45BVXI

Overview

CY62136FV30LL-45BVXI from Cypress Semiconductor is a 2-Mbit (128 K × 16) CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and ultra-low standby current (1 µA typical). It operates across –40 °C to +85 °C (Industrial/Auto-A), features automatic CE power-down, and supports byte-wide writes via BHE/ BLE control - deployed in battery-powered portable electronics requiring fast, low-power memory.

For engineers reviewing the CY62136FV30LL-45BVXI datasheet, CY62136FV30LL-45BVXI pinout, CY62136FV30LL-45BVXI application, or CY62136FV30LL-45BVXI equivalent, key selection criteria include 45 ns read cycle time, 128K × 16 organization, VFBGA-48 package compatibility, MoBL® low-power architecture, and pin compatibility with CY62136V/CY62136CV30 families.

Technical Context

This SRAM implements a fully static 128K × 16-bit array with independent byte enable (BHE/BLE) for selective 8-bit writes, enabling efficient data bus utilization in 16-bit systems. Its CMOS design delivers deterministic timing with tRC = 45 ns, tAA = 45 ns, and tDOE = 22 ns under industrial conditions.

The device integrates automatic power-down logic: when CE is HIGH and address lines are stable, ISB1 drops to ≤5 µA; during full deselect (CE HIGH, BHE/BLE HIGH), it achieves >99% power reduction. Output drivers enter high-Z state on CE/OE/BHE/BLE deassertion or during write cycles.

Key Specifications

Pinout & Package

Package: 48-ball very fine-pitch ball grid array (VFBGA), 7 mm × 9 mm body, 0.5 mm pitch, JEDEC MO-220 compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV12816BLL-45NLI and AS6C1008-45TIN, CY62136FV30LL-45BVXI uniquely combines VFBGA packaging, true 16-bit width, sub-5 µA standby, and automatic CE power-down - making it optimal for new designs prioritizing miniaturization and battery longevity.

Availability

CY62136FV30LL-45BVXI is available at Aetrix Electronics and suitable for cellular handset memory, industrial HMI buffer, and automotive infotainment cache applications requiring stable component supply, long-term lifecycle support, and Pb-free compliance.

Supply support for CY62136FV30LL-45BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance, low-power memory and programmable solutions for embedded systems, automotive, and industrial markets.

The CY62136FV30 belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for portable and energy-sensitive applications where extended battery runtime and compact packaging are critical.

FAQ

What is the minimum VCC required to retain data in CY62136FV30LL-45BVXI?

Data retention is guaranteed down to VCC = 1.5 V, with ICCDR ≤4 µA under industrial conditions. The device enters data retention mode automatically when CE is HIGH and VCC drops below 2.2 V, maintaining stored contents without external refresh or backup power.

Does CY62136FV30LL-45BVXI require external pull-up resistors on BHE/BLE pins?

No. BHE and BLE are CMOS-compatible inputs with ±1 µA leakage; they may be driven directly from FPGA or MCU GPIOs. Pull-ups are unnecessary unless system-level noise immunity mandates weak biasing - per datasheet Note 8, tying them to valid CMOS levels is sufficient for ISB1/ISB2 compliance.

Can CY62136FV30LL-45BVXI operate reliably at 2.2 V and 85 °C?

Yes. The device is fully specified across 2.2–3.6 V and –40 °C to +85 °C (Industrial/Auto-A grade). At 2.2 V and 85 °C, tRC remains ≤45 ns, ISB2 ≤5 µA, and VOH ≥2.0 V - all parameters meet datasheet limits without derating.

How does automatic power-down behave when only OE is HIGH while CE and WE are LOW?

Automatic power-down is triggered solely by CE HIGH state. If CE is LOW (device selected), the SRAM remains active regardless of OE/WE status. With OE HIGH and CE LOW, outputs go high-Z but internal circuitry stays powered - ICC remains ~1.6 mA (typical at 1 MHz), not ISB.