Infineon Technologies CY62136FV30LL-45ZSXI

Overview

CY62136FV30LL-45ZSXI from Cypress Semiconductor is a 2-Mbit (128 K × 16) CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and industrial/automotive-A temperature rating (–40 °C to +85 °C). It delivers ultra-low standby current (1 µA typical), supports byte-wide writes via BHE/ BLE controls, and features automatic power-down on address inactivity - enabling battery-sensitive applications like portable medical monitors and handheld test equipment.

For engineers reviewing the CY62136FV30LL-45ZSXI datasheet, CY62136FV30LL-45ZSXI pinout, CY62136FV30LL-45ZSXI application, or CY62136FV30LL-45ZSXI equivalent, key selection criteria include its 48-ball VFBGA package compatibility, 16-bit data bus interface, MoBL® low-power architecture, and pin-for-pin equivalence with CY62136V and CY62136EV30 series SRAMs.

Technical Context

This SRAM implements a full CMOS 128K × 16 asynchronous memory array with independent byte enable (BHE/BLE) control for selective 8-bit writes, eliminating need for external masking logic. Its dual power-down modes - automatic CE-triggered (90% reduction) and full deselection (99% reduction) - are activated by CMOS-level inputs without external sequencing.

The device uses standard TTL-compatible input thresholds (VIH = 2.2 V min at VCC ≥ 2.7 V) and drives 2.4 V VOH / 0.4 V VOL under load, ensuring interoperability with mixed-voltage 3.3 V/2.5 V microcontroller buses. All timing parameters (tRC = 45 ns, tDOE = 22 ns, tHZOE = 18 ns) are guaranteed over full voltage and temperature range.

Key Specifications

Pinout & Package

48-ball very fine-pitch ball grid array (VFBGA) package with 0.5 mm pitch, 6 mm × 8 mm body size, and JEDEC MO-276 compliant footprint. Pinout optimized for signal integrity: VCC/VSS pairs distributed across corners and edges; I/O pins grouped in two 8-bit banks (I/O0–I/O7, I/O8–I/O15); dedicated byte enables (BHE, BLE) adjacent to respective I/O banks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV12816BLL-45NLI and AS6C4008-45TIN, the CY62136FV30LL-45ZSXI uniquely combines automotive-A qualification, 1 µA standby, and 48-ball VFBGA in a 128K × 16 configuration - making it optimal for space-constrained, battery-backed automotive and portable medical systems requiring guaranteed low-power behavior.

Availability

CY62136FV30LL-45ZSXI is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC I/O modules, and automotive infotainment head units requiring stable component supply across extended product lifecycles.

Supply support for CY62136FV30LL-45ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and consumer applications.

The CY62136FV30 belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for ultra-low-power, high-speed data buffering in portable and energy-constrained embedded systems.

FAQ

What is the maximum operating frequency supported by CY62136FV30LL-45ZSXI?

The device does not operate synchronously and has no clock input. Its maximum effective throughput is determined by access time: 45 ns read/write cycle time supports up to ~22 MHz sustained random access. For burst transfers, actual bandwidth depends on bus protocol overhead and controller latency - measured worst-case tRC = 45 ns guarantees no wait states with 22 MHz peripherals.

Does CY62136FV30LL-45ZSXI require external pull-up resistors on BHE and BLE pins?

No. BHE and BLE are CMOS inputs with standard VIH/VIL thresholds (2.2 V min / 0.8 V max at VCC = 3.3 V). They must be driven to valid logic levels - floating states violate ISB1/ISB2 specifications and may increase standby current beyond 5 µA. External pull-ups are unnecessary if controlled by an MCU GPIO or ASIC output.

Can CY62136FV30LL-45ZSXI retain data at 1.5 V supply?

Yes. Data retention is guaranteed down to VDR = 1.5 V with ICCDR ≤ 4 µA (industrial/auto-A grade). This mode requires CE and byte enables held at CMOS levels while VCC drops to 1.5 V - enabling backup operation from supercapacitors or coin cells during main rail failure.

Is the 48-ball VFBGA package compatible with standard reflow profiles?

Yes. The Pb-free VFBGA package complies with J-STD-020D moisture sensitivity level 3 and supports peak reflow temperatures up to 260 °C. Recommended profile includes ramp rate ≤ 3 °C/s, soak at 150–200 °C for 60–120 s, and time above liquidus (217 °C) of 60–90 s - matching standard lead-free assembly lines.