Infineon Technologies CY62136FV30LL-45ZSXIT

Overview

CY62136FV30LL-45ZSXIT from Cypress Semiconductor is a 2-Mbit (128 K × 16) CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and industrial/automotive-A temperature rating (–40 °C to +85 °C). It delivers ultra-low standby current (1 µA typical), supports byte-wide write control via BHE/ BLE, and features automatic power-down on address inactivity - enabling battery-sensitive portable electronics.

For engineers reviewing the CY62136FV30LL-45ZSXIT datasheet, CY62136FV30LL-45ZSXIT pinout, CY62136FV30LL-45ZSXIT application, or CY62136FV30LL-45ZSXIT equivalent, key selection criteria include its VFBGA-48 package compatibility, 16-bit data bus width, MoBL® low-power architecture, and pin-for-pin interoperability with CY62136V and CY62136EV30 series.

Technical Context

This SRAM implements a full CMOS 128K × 16 array with independent high- and low-byte enables (BHE/BLE), allowing selective 8-bit writes without read-modify-write cycles. Its dual power-down modes - automatic CE-triggered shutdown (90% active power reduction) and full standby (99% reduction at ISB2 ≤ 5 µA) - are controlled by CMOS-level input thresholds and require no external logic.

Timing behavior is defined by strict AC parameters: tAA = 45 ns max, tDOE = 22 ns max, and tHZOE = 18 ns max under industrial conditions. The device uses standard TTL-compatible input thresholds (VIH ≥ 2.2 V at VCC > 2.7 V) and guarantees VOL ≤ 0.4 V at IOL = 2.1 mA, ensuring robust interfacing with microcontrollers and FPGAs.

Key Specifications

Pinout & Package

48-ball very fine-pitch ball grid array (VFBGA) package with 0.5 mm pitch, 6.0 mm × 8.0 mm body size, and JEDEC MO-245 compliant footprint. Thermal resistance θJA = 75 °C/W (still air, 2-layer board).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed, low-power SRAM applications.

Compared with IS62WV12816BLL-45NLI and R1LV25616ASB-45SI, CY62136FV30LL-45ZSXIT delivers the lowest verified standby current (5 µA max) and full automotive-A qualification, making it optimal for safety-critical portable and vehicular systems requiring guaranteed low-power operation across temperature extremes.

Availability

CY62136FV30LL-45ZSXIT is available at Aetrix Electronics and suitable for portable medical monitors, automotive infotainment displays, and industrial PLC I/O modules requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY62136FV30LL-45ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for embedded systems, emphasizing low-power innovation and automotive-grade reliability.

The MoBL® (More Battery Life™) SRAM product line targets portable and energy-constrained applications - delivering industry-leading standby current and automatic power-down intelligence without sacrificing speed or density.

FAQ

What is the maximum clock frequency supported by CY62136FV30LL-45ZSXIT?

This SRAM has no internal clock; it operates asynchronously. Its 45 ns access time supports reliable interfacing with microcontrollers or FPGAs running at up to 22 MHz bus frequencies (1/45 ns ≈ 22.2 MHz), assuming proper setup/hold timing margins and signal integrity.

Does CY62136FV30LL-45ZSXIT require external pull-up resistors on BHE/BLE pins?

No - BHE and BLE are CMOS inputs with standard VIH/VIL thresholds. They must be driven to valid logic levels (not left floating) to meet ISB1/ISB2 specifications, but no external pull-ups are required if controlled directly by an MCU GPIO or FPGA output.

Can CY62136FV30LL-45ZSXIT retain data at 1.5 V supply?

Yes - data retention is guaranteed down to VDR = 1.5 V, with ICCDR ≤ 4 µA (industrial/auto-A grade). This enables use as a non-volatile backup memory when paired with a supercapacitor or battery during main power loss.

Is the 48-ball VFBGA package compatible with standard reflow profiles?

Yes - the Pb-free VFBGA package is qualified for IPC/JEDEC J-STD-020D-compliant reflow, including peak temperatures up to 260 °C. Recommended profile includes ramp rate ≤ 3 °C/s, soak at 150–200 °C for 60–120 s, and peak dwell ≥ 60 s above liquidus (217 °C).