Infineon Technologies CY62136FV30LL-55ZSXE

Overview

CY62136FV30LL-55ZSXE from Cypress Semiconductor is a 2-Mbit (128 K × 16) CMOS static RAM with 55 ns access time, 2.2–3.6 V supply voltage, industrial/automotive-A temperature range (–40 °C to +85 °C), and ultra-low standby current (max 5 µA). It serves as a nonvolatile data buffer in portable telecom and embedded control systems requiring fast, low-power memory with byte-level write enable.

For engineers reviewing the CY62136FV30LL-55ZSXE datasheet, CY62136FV30LL-55ZSXE pinout, CY62136FV30LL-55ZSXE application, or CY62136FV30LL-55ZSXE equivalent, key selection criteria include its 44-pin TSOP II package compatibility, dual-byte enable (BHE/ BLE) architecture, automatic CE power-down mode, and MoBL®-optimized active current (1.6 mA at 1 MHz).

Technical Context

The CY62136FV30LL-55ZSXE implements a 128K × 16 asynchronous SRAM array with independent high- and low-byte write enables (BHE, BLE), enabling partial-word writes without read-modify-write cycles. Its CMOS design supports full rail-to-rail input thresholds (VIH = 2.2 V min, VIL = 0.8 V max at 3.6 V) and guarantees 55 ns tRC across –40 °C to +85 °C.

It features two distinct low-power states: automatic CE-driven power-down (ISB1/ISB2 ≤ 5 µA) when addresses are static, and full deselection (CE HIGH) yielding >99% power reduction. Output drivers support 2.1 mA sink capability with VOL ≤ 0.4 V, and tristate timing (tLZOE = 5 ns, tHZOE = 20 ns) ensures clean bus sharing in multi-device systems.

Key Specifications

Pinout & Package

44-pin Thin Small Outline Package (TSOP II), 12.0 mm × 10.0 mm body, 0.8 mm lead pitch, gull-wing leads. Pin 1 marked by beveled corner; pins arranged in two rows (22 per side).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Compared with IS62WV12816BLL-55TLI and NVTFS25616LDE, the CY62136FV30LL-55ZSXE uniquely supports 2.2 V operation and delivers lowest standby current (5 µA) in its class, making it optimal for energy-constrained, wide-input-voltage embedded systems.

Availability

CY62136FV30LL-55ZSXE is available at Aetrix Electronics and suitable for portable medical monitors, automotive telematics units, industrial PLC I/O modules, and wireless sensor gateways requiring stable component supply across extended product lifecycles.

Supply support for CY62136FV30LL-55ZSXE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and consumer electronics, with emphasis on low-power innovation.

The CY62136FV30 belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for portable and battery-powered applications demanding nanosecond-speed access with microamp-level quiescent current.

FAQ

What is the minimum VCC required for reliable data retention?

The CY62136FV30LL-55ZSXE maintains data integrity down to VCC = 1.5 V in retention mode (CE HIGH), as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤ 4 µA, enabling multi-year storage on backup capacitors or supercapacitors without external regulation.

Does the device require external pull-up resistors on BHE and BLE?

No. BHE and BLE are CMOS inputs with standard VIH/VIL thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V at VCC = 3.6 V); they interface directly with microcontroller GPIOs or FPGA I/O banks without external biasing. Pull-ups are unnecessary unless system-level noise immunity mandates them.

Can CY62136FV30LL-55ZSXE operate at 2.5 V with full 55 ns timing?

Yes. The –55 speed grade is fully characterized from 2.2 V to 3.6 V, including 2.5 V. All AC parameters-including tRC = 55 ns, tAA = 55 ns, and tDOE = 25 ns-are guaranteed across the entire voltage and temperature range per the Electrical Characteristics table.

How does automatic power-down behave when OE is HIGH but CE is LOW?

Automatic power-down is triggered only when CE is HIGH and address lines are static. If CE is LOW (device selected), the part remains in active mode regardless of OE state. With OE HIGH and CE LOW, outputs go high-Z but internal circuitry stays powered-ICC remains ~13 mA (max), not µA.