Infineon Technologies CY62136FV30LL-55ZSXET

Overview

CY62136FV30LL-55ZSXET from Cypress Semiconductor is a 2-Mbit (128 K × 16) CMOS static RAM with 55 ns access time, 2.2–3.6 V supply voltage, and ultra-low standby current (1 µA typical, 5 µA max at industrial temp). It supports byte-level write control via BHE/ BLE, automatic power-down on deselect, and operates across –40 °C to +85 °C for industrial and automotive-A applications.

For engineers reviewing the CY62136FV30LL-55ZSXET datasheet, CY62136FV30LL-55ZSXET pinout, CY62136FV30LL-55ZSXET application, or CY62136FV30LL-55ZSXET equivalent, key selection criteria include 16-bit data bus width, VFBGA-48 package compatibility, MoBL® low-power architecture, and pin compatibility with CY62136V and CY62136EV30 series SRAMs.

Technical Context

The CY62136FV30LL-55ZSXET implements a fully static 128K × 16 memory array with independent byte enable (BHE/BLE) logic enabling selective 8-bit writes without read-modify-write cycles. Its CMOS design ensures deterministic timing with tRC = 55 ns, tAA = 55 ns, and tDOE = 25 ns under automotive-A conditions.

Power management is handled through dual-tier low-power states: CE HIGH triggers automatic power-down reducing ICC by >90%, while full deselection (CE HIGH + BHE/BLE HIGH) achieves >99% reduction in ICC, yielding ISB2 ≤ 5 µA at 3.6 V and 85 °C.

Key Specifications

Pinout & Package

Package: 48-ball VFBGA (Very Fine-Pitch Ball Grid Array), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant, lead-free finish (ZSXET suffix).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV12816BLL-55TLI and AS6C4008-55TIN, the CY62136FV30LL-55ZSXET uniquely combines 2.2 V operation, integrated byte enables, and VFBGA-48 packaging-making it optimal for space-constrained, battery-aware designs requiring zero-latency partial-word writes.

Availability

CY62136FV30LL-55ZSXET is available at Aetrix Electronics and suitable for wireless handset memory buffers, automotive instrument cluster display caches, and industrial PLC I/O mapping tables requiring stable component supply across extended product lifecycles.

Supply support for CY62136FV30LL-55ZSXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance, low-power semiconductor solutions for embedded systems, connectivity, and memory applications.

The MoBL® (More Battery Life) SRAM product line targets portable and energy-sensitive applications requiring deterministic timing, ultra-low standby current, and compact packaging-specifically optimized for handheld, automotive, and industrial edge devices.

FAQ

What is the maximum clock frequency supported by CY62136FV30LL-55ZSXET?

The CY62136FV30LL-55ZSXET does not use a clock signal-it is an asynchronous SRAM. Its 55 ns access time corresponds to a maximum effective bus toggle rate of approximately 18.2 MHz (1/55 ns), assuming full-cycle read or write operations without wait states. Timing is governed by tRC, tAA, and tWC parameters-not a system clock.

Can CY62136FV30LL-55ZSXET operate at 2.5 V and still meet the 55 ns specification?

Yes. The device is fully specified across 2.2 V to 3.6 V. At VCC = 2.5 V and TA = 25 °C, all AC timing parameters-including tRC = 55 ns, tAA = 55 ns, and tDOE = 25 ns-are guaranteed per the datasheet's Electrical Characteristics table for the -55 speed grade under industrial/automotive-A conditions.

Does the VFBGA-48 package require special PCB layout considerations?

Yes. The 0.5 mm pitch VFBGA demands controlled impedance routing, solder mask defined pads, and strict adherence to IPC-7351B Class L footprints. Thermal vias under the exposed pad (if present) and symmetric fanout for address/data buses are recommended to manage signal integrity and thermal dissipation, especially given its 75 °C/W θJA rating.

How does automatic power-down behave when only BHE or BLE is HIGH while CE is LOW?

Automatic power-down is triggered only when CE is HIGH. If CE is LOW and either BHE or BLE is HIGH, the device remains fully active for the enabled byte lane only-I/O0–I/O7 remain functional if BLE is LOW (regardless of BHE), and I/O8–I/O15 remain functional if BHE is LOW (regardless of BLE). No power reduction occurs unless CE goes HIGH.