Infineon Technologies CY62136VNLL-70BAXAT

Overview

CY62136VNLL-70BAXAT from Cypress Semiconductor is a 2-Mbit (128K × 16) CMOS static RAM with MoBL® low-power architecture, designed for battery-sensitive portable systems. It operates at 55 ns access time over 2.7V–3.6V supply, supports industrial and automotive temperature ranges (–40°C to +125°C), and features automatic CE-controlled power-down reducing standby current to 1 µA - enabling extended runtime in cellular handsets and handheld instrumentation.

For engineers reviewing the CY62136VNLL-70BAXAT datasheet, CY62136VNLL-70BAXAT pinout, CY62136VNLL-70BAXAT application, or CY62136VNLL-70BAXAT equivalent, key selection criteria include byte-enable control (BHE/ BLE), TTL-compatible I/O, ultra-low ISB2 standby current, and TSOP II package compatibility for space-constrained PCB layouts.

Technical Context

The CY62136VNLL-70BAXAT implements a full 128K × 16 asynchronous SRAM array with independent high- and low-byte write enables (BHE/BLE), allowing partial-word writes without read-modify-write cycles. Its dual power-down modes - automatic address-stable detection (99% current reduction) and CE-driven standby - are hardware-triggered with no software overhead.

Timing is fully asynchronous: read cycle time (tRC) is 55 ns max, address-to-data (tAA) and CE-to-output (tACE) are both 55 ns, and OE/CE/BLE/BHE-to-output enable/disable delays are specified down to 5 ns (tLZOE/tLZCE). All I/Os enter high-impedance state under four conditions: CE HIGH, OE HIGH, BHE/BLE HIGH, or during active write (CE LOW & WE LOW).

Key Specifications

Pinout & Package

Package: 44-pin TSOP Type II (Thin Small Outline Package), 400 mil width, standard lead-free finish per JEDEC MO-143AC.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV12816BLL-55MLI and R1LV25616AS-5SI#S0, the CY62136VNLL-70BAXAT uniquely delivers byte-selectable writes, 1 µA ISB2, and full –40°C to +125°C operation - making it optimal for thermally demanding, battery-limited, and firmware-efficient embedded systems.

Availability

CY62136VNLL-70BAXAT is available at Aetrix Electronics and suitable for cellular handset design, portable medical instrumentation, industrial HMI development, and automotive body control modules requiring stable component supply across extended temperature and low-power constraints.

Supply support for CY62136VNLL-70BAXAT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, microcontrollers, and programmable solutions for embedded systems.

The CY62136VN series belongs to Cypress's MoBL® (More Battery Life) SRAM portfolio, engineered specifically for ultra-low-power, high-reliability data buffering in portable and automotive electronics where battery longevity and thermal resilience are critical.

FAQ

What is the maximum clock frequency supported by CY62136VNLL-70BAXAT?

The CY62136VNLL-70BAXAT is an asynchronous SRAM and does not use a clock signal. Its performance is defined by access time (55 ns max) and cycle time (55 ns min read/write), enabling reliable operation with bus frequencies up to ~18 MHz in systems with zero wait states and compatible setup/hold timing.

Does CY62136VNLL-70BAXAT support partial-word writes without external logic?

Yes - it supports true 8-bit partial-word writes via dedicated Byte Low Enable (BLE) and Byte High Enable (BHE) inputs. When BLE is LOW, only I/O0–I/O7 are written; when BHE is LOW, only I/O8–I/O15 are written - no external masking logic or read-modify-write sequences required.

Can CY62136VNLL-70BAXAT retain data at 1.0 V VCC?

Yes - its data retention voltage (VDR) is specified at 1.0 V minimum. At this voltage, with CE HIGH and inputs stabilized, the device maintains stored data while drawing ≤7.5 µA (ICC DR), enabling use in brown-out or ultra-low-power sleep modes.

Is the 44-pin TSOP II footprint compatible with other Cypress MoBL® SRAMs?

Yes - the 44-pin TSOP II (MO-143AC) footprint is standardized across Cypress's 2-Mbit MoBL® SRAM family, including CY62136VN variants with different speed grades (e.g., -55, -70) and temperature options, enabling drop-in replacement within same package type.