Infineon Technologies CY62136VNLL-70ZSXAT

Overview

CY62136VNLL-70ZSXAT from Cypress Semiconductor is a 2-Mbit (128K × 16) CMOS static RAM with MoBL® low-power architecture, designed for battery-sensitive embedded systems. It operates across 2.7V–3.6V, delivers 55 ns access time, supports industrial/automotive temperature ranges up to +125°C, and features automatic CE-controlled power-down reducing standby current to 1 µA.

For engineers reviewing the CY62136VNLL-70ZSXAT datasheet, CY62136VNLL-70ZSXAT pinout, CY62136VNLL-70ZSXAT application, or CY62136VNLL-70ZSXAT equivalent, key selection criteria include byte-enable (BHE/ BLE) control, ultra-low ISB2 standby current, TSOP II 44-pin package compatibility, and TTL-compatible I/O for legacy interface integration.

Technical Context

The CY62136VNLL-70ZSXAT implements a fully static 128K × 16 RAM array with independent high- and low-byte enables (BHE/BLE), enabling partial-word writes without read-modify-write cycles. Its dual power-down modes-automatic (address inactivity) and manual (CE HIGH)-achieve >99% active-to-standby current reduction.

It uses CMOS circuitry with TTL-compatible input thresholds (VIH = 2.2 V min at VCC = 3.6 V) and output drive (IOH = −1.0 mA, IOL = 2.1 mA), ensuring interoperability with 3.3 V logic families. Data retention is guaranteed down to VCC = 1.0 V with ICCDR ≤ 7.5 µA.

Key Specifications

Pinout & Package

Package: 44-pin TSOP Type II (Thin Small Outline Package), lead-free, surface-mount, 0.8 mm pitch, 10.16 mm × 18.42 mm body size.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV12816BLL-55MLI and R1LV0216R-5SI#B0, the CY62136VNLL-70ZSXAT uniquely combines Automotive-E qualification, true byte-enable control, and TSOP II compatibility-making it the sole choice for drop-in replacement in legacy automotive and portable designs requiring minimal layout change.

Availability

CY62136VNLL-70ZSXAT is available at Aetrix Electronics and suitable for wireless handset baseband subsystems, automotive body control modules, and industrial PLC I/O expansion cards requiring stable component supply across extended temperature and long product lifecycles.

Supply support for CY62136VNLL-70ZSXAT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, microcontrollers, and programmable solutions for embedded systems.

The CY62136VN series belongs to Cypress's MoBL® (More Battery Life) SRAM portfolio, engineered specifically for portable, automotive, and industrial applications demanding ultra-low standby power without sacrificing speed or reliability.

FAQ

What is the maximum clock frequency supported for read/write cycles?

The CY62136VNLL-70ZSXAT does not use a clock; it is an asynchronous SRAM. Its timing is governed by access time (tAA = 55 ns max) and cycle time (tRC = 55 ns max), meaning it supports effective burst rates up to ~18.2 MHz in continuous read/write patterns. No external clock signal is required or accepted.

Can BHE and BLE be used simultaneously for 16-bit writes?

Yes-BHE and BLE may both be asserted LOW concurrently to enable full 16-bit writes. When both are active, I/O0–I/O7 and I/O8–I/O15 transfer data to the same memory location addressed by A0–A16. This is the default mode for full-word operations and requires no special timing beyond standard tWC and tAW constraints.

Is the ZSXAT suffix indicative of RoHS compliance and lead-free finish?

Yes-the "Z" in ZSXAT denotes lead-free (Pb-free) construction, and "XAT" specifies the 44-pin TSOP Type II package with matte tin finish. Cypress confirms this variant meets RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 3 (MSL-3) requirements.

How does automatic power-down behave during partial address changes?

Automatic power-down activates only when *all* address lines (A0–A16) remain static for >100 ns. Partial address toggling (e.g., A0–A7 changing while A8–A16 hold) keeps the device in active mode. This behavior ensures reliable operation during sequential accesses within a page or buffer region.