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Infineon Technologies CY62137CV30LL-70BVXE
- Part No.:
- CY62137CV30LL-70BVXE
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62137CV30LL-70BVXE.pdf
- Description:
- IC SRAM 2MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,685
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Product details
Overview
CY62137CV30LL-70BVXE from Cypress Semiconductor is a 2-Mbit (128K × 16) CMOS static RAM with 70 ns access time, operating at 2.7–3.3 V over -40°C to +85°C industrial temperature range, featuring ultra-low active current (1.5 mA @ 1 MHz), automatic CE power-down (ISB2 ≤ 10 µA), and 48-ball FBGA package - used in portable telecom baseband subsystems requiring battery-efficient data buffering.
For engineers reviewing the CY62137CV30LL-70BVXE datasheet, CY62137CV30LL-70BVXE pinout, CY62137CV30LL-70BVXE application, or CY62137CV30LL-70BVXE equivalent, key selection criteria include byte-enable-controlled 16-bit I/O partitioning, VCC-dependent standby current scaling, timing compatibility with 70 ns microcontroller bus cycles, and Pb-free FBGA thermal resistance (ΘJA = 55 °C/W).
Technical Context
This SRAM implements a synchronous, non-volatile-retentive memory array with dual-byte enable (BHE/BLE) for independent high/low word access, CMOS-compatible input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V), and automatic power-down triggered by CE HIGH or simultaneous BHE/BLE HIGH. It supports full 16-bit parallel reads/writes with address-to-data valid delay (tAA) of 70 ns.
The device uses a hierarchical row/column decoder architecture with sense amplifiers and data drivers optimized for low ICC at 1 MHz (1.5 mA typ.) and controlled output impedance (tLZOE = 5 ns, tHZOE = 25 ns). Standby current ISB2 is specified at 2–10 µA under static CE HIGH conditions with all inputs stable.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 2 Mbit (128K × 16) - provides 256 KB of fast random-access storage for firmware caching or real-time data buffers |
| Access Time | 70 ns - matches timing budgets of legacy 8/16-bit microcontrollers and DSPs without wait-state insertion |
| VCC Range | 2.7 V to 3.3 V - compatible with single-supply 3.3 V systems and mixed-voltage designs using LDO regulation |
| Active Current | 1.5 mA @ 1 MHz - enables >100-hour operation on coin-cell batteries in always-on monitoring nodes |
| Standby Current | 2–10 µA (ISB2) - reduces quiescent power to <33 nW per bit during system sleep modes |
| Operating Temp | -40°C to +85°C - qualified for industrial control panels, medical handhelds, and automotive infotainment head units |
| Package | 48-ball FBGA (6 mm × 8 mm, 0.8 mm pitch) - supports high-density PCB layouts with 55 °C/W junction-to-ambient thermal resistance |
Pinout & Package
48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.8 mm ball pitch, 6 mm × 8 mm body size, and JEDEC MO-249 compliant footprint. Pin 1 (A16) located at top-left corner (A1 position) in top-view orientation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus supporting full 128K-word addressing; A16 enables upper/lower half-page selection |
| I/O0–I/O7 | Data Bus (Low Byte) | 8-bit bidirectional data path enabled only when BLE = LOW; high-impedance when deselected or during write |
| I/O8–I/O15 | Data Bus (High Byte) | 8-bit bidirectional data path enabled only when BHE = LOW; isolated from low byte for true 16-bit or dual 8-bit operation |
| CE | Chip Enable | Active-LOW global select; forces automatic power-down and high-Z I/O when HIGH |
| OE | Output Enable | Active-LOW read control; disables outputs (high-Z) when HIGH, independent of CE state |
| WE | Write Enable | Active-LOW write strobe; initiates write cycle when CE and WE both LOW; latches data on falling edge |
| BLE | Byte Low Enable | Active-LOW control for I/O0–I/O7; allows partial-word writes without disturbing high byte |
| BHE | Byte High Enable | Active-LOW control for I/O8–I/O15; enables independent high-byte updates in 16-bit systems |
| VCC | Power Supply | 2.7–3.3 V core supply; decoupling required within 5 mm due to 6 pF input capacitance |
| VSS | Ground | Dual ground balls (pins D1, E1) reduce switching noise and improve signal integrity on 16-bit bus |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | Reduces active ICC to 1.5 mA @ 1 MHz and standby ISB2 to 2 µA - extends battery life in portable modems and IoT edge sensors |
| Dual Independent Byte Enables (BHE/BLE) | Enables concurrent or selective 8-bit writes to high/low bytes without read-modify-write overhead - critical for efficient UART/USB FIFO management |
| Automatic CE Power-Down | Reduces ICC by >99% when CE is HIGH or both BHE/BLE are HIGH - eliminates external power-gating logic in sleep-mode designs |
| CMOS-Compatible Timing Margins | tHZOE = 25 ns and tLZCE = 10 ns ensure clean bus release before next cycle - prevents contention in multi-SRAM bus architectures |
| Pb-Free 48-Ball FBGA | RoHS-compliant package with 55 °C/W ΘJA enables convection-cooled operation in sealed enclosures without heatsinks |
Applications
| Cellular Baseband Buffer | Industrial HMI Data Cache |
|---|---|
|
Use Scenario: Stores intermediate FFT coefficients and channel equalization tables in 2G/3G modem ASIC subsystems. IC Role / Device Role / Timing Role: Asynchronous SRAM providing zero-wait-state 16-bit burst reads aligned to 70 ns DSP memory bus cycles. Use Value: 1.5 mA active current enables continuous background processing on 3.3 V Li-ion supply while preserving >48-hour standby. |
Use Scenario: Caches real-time PLC I/O status maps and configuration registers in programmable logic controller front-ends. IC Role / Device Role / Timing Role: Non-volatile-retentive buffer interfacing to ARM9-based HMI SoC via 16-bit parallel bus with CE/OE handshaking. Use Value: 2–10 µA ISB2 ensures <10 µW total standby power across 16-channel I/O modules during factory line shutdown. |
| Medical Ultrasound Beamformer | Automotive Infotainment Audio FIFO |
|
Use Scenario: Holds digitized echo samples between ADC capture and FPGA-based beam synthesis in portable ultrasound probes. IC Role / Device Role / Timing Role: Dual-byte-enabled SRAM allowing simultaneous 8-bit sample writes (BLE) and 8-bit coefficient reads (BHE) at 20 MSPS effective rate. Use Value: tAA = 70 ns and tDBE = 70 ns guarantee deterministic latency for real-time beam steering without pipeline stalls. |
Use Scenario: Implements ping-pong audio sample buffers between Bluetooth audio codec and DSP in automotive head units. IC Role / Device Role / Timing Role: 16-bit wide memory serving as dual 128-word FIFO with independent BHE/BLE control for stereo left/right channel separation. Use Value: Automatic CE power-down cuts idle power by 99% during Bluetooth link negotiation, meeting ISO 16750-2 cold-cranking requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar 128K × 16 SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV12816BLL-70NLI | 70 ns access, 2.7–3.6 V, 44-pin TSOP-II package (not FBGA); ISB2 = 12 µA (vs. 10 µA); no DNU pin requirement | Requires PCB redesign for TSOP footprint; lacks automatic CE power-down - needs external enable logic for equivalent low-power mode | Select when board space permits TSOP and cost sensitivity outweighs thermal/power advantages of FBGA |
| ON Semiconductor MC68HC11E9CP | Not an SRAM - microcontroller with integrated 512 B RAM; incompatible architecture, no 128K × 16 interface | Cannot replace as memory component; only relevant if migrating from legacy HC11-based designs to external memory expansion | Not a functional alternative; use only for historical reference in obsolete design migration planning |
Compared with IS62WV12816BLL-70NLI, CY62137CV30LL-70BVXE delivers superior thermal performance (55 vs. 75 °C/W) and lower standby current, while the MC68HC11E9CP is architecturally incompatible and unsuitable as a drop-in replacement.
Availability
CY62137CV30LL-70BVXE is available at Aetrix Electronics and suitable for cellular baseband subsystems, industrial HMI controllers, medical ultrasound beamformers, and automotive infotainment audio FIFOs requiring stable component supply across extended product lifecycles.
Supply support for CY62137CV30LL-70BVXE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, PSoC programmable systems-on-chip, and USB/USB-C solutions.
CY62137CV30LL-70BVXE belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for ultra-low-power portable electronics where extended battery runtime and compact packaging are critical design constraints.
FAQ
What is the minimum VCC required to retain data in CY62137CV30LL-70BVXE?
Data retention is guaranteed down to VDR = 1.5 V, as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤6 µA (industrial grade) with CE HIGH and all inputs stable. Operation below VCC(min) = 2.7 V is not supported for active read/write cycles.
Can CY62137CV30LL-70BVXE operate with mixed 2.7 V and 3.3 V I/O interfaces?
No - the device has a single VCC pin (2.7–3.3 V) and CMOS-compatible VIH/VIL thresholds referenced to VCC. Interface voltages must be level-shifted to match VCC; direct connection to 5 V or 1.8 V buses violates absolute maximum ratings and risks latch-up.
How does automatic power-down behave when only BHE is HIGH and BLE is LOW?
Automatic power-down activates only when CE is HIGH OR both BHE and BLE are HIGH simultaneously. With BHE HIGH and BLE LOW, the device remains fully operational on the low byte (I/O0–I/O7), and ICC remains at active levels - no power reduction occurs.
Is the DNU pin (E3) required to be tied to VSS in all applications?
Yes - per datasheet Note 4, the E3 (DNU) pin must be left floating or tied to VSS to ensure proper internal biasing. Leaving it unconnected is acceptable, but connecting to VCC or driving it actively may cause undefined behavior or increased leakage current.
CY62137CV30LL-70BVXE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 2Mbit
- Memory Organization:
- 128K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 2.7V ~ 3.3V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62137CV30LL-70BVXE FAQ
1.How can I place an order for CY62137CV30LL-70BVXE through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62137CV30LL-70BVXE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62137CV30LL-70BVXE reliable?
The price and inventory of CY62137CV30LL-70BVXE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62137CV30LL-70BVXE is usually 5 days.
3.What payment methods are accepted for CY62137CV30LL-70BVXE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62137CV30LL-70BVXE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62137CV30LL-70BVXE?
CY62137CV30LL-70BVXE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62137CV30LL-70BVXE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62137CV30LL-70BVXE?
For technical support, including CY62137CV30LL-70BVXE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62137CV30LL-70BVXE requirements.
6.How does Aetrix verify that CY62137CV30LL-70BVXE is sourced from the original manufacturer or authorized distributors?
All CY62137CV30LL-70BVXE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62137CV30LL-70BVXE meets industry standards.
7.What is the process for return or replacement of CY62137CV30LL-70BVXE?
All CY62137CV30LL-70BVXE units undergo pre-shipment inspection (PSI). If there is an issue with CY62137CV30LL-70BVXE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62137CV30LL-70BVXE part is unused and in its original packaging.
Return procedure for CY62137CV30LL-70BVXE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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