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Infineon Technologies CY62137CVSL-70BAXIT
- Part No.:
- CY62137CVSL-70BAXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
CY62137CVSL-70BAXIT.pdf
- Description:
- IC SRAM 2MBIT PARALLEL 48FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,361
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Product details
Overview
CY62137CVSL-70BAXIT from Cypress Semiconductor is a 2-Mbit (128K × 16) CMOS static RAM with 70 ns access time, industrial temperature range (–40°C to +85°C), 2.7–3.6 V supply voltage, and ultra-low standby current (1 µA typical). It implements byte-level write control via BHE/BLE, automatic CE-driven power-down, and high-impedance I/O tri-state management-used in portable embedded systems requiring battery life extension and memory expansion.
For engineers reviewing the CY62137CVSL-70BAXIT datasheet, CY62137CVSL-70BAXIT pinout, CY62137CVSL-70BAXIT application, or CY62137CVSL-70BAXIT equivalent, key selection criteria include its 70 ns read cycle time, 1 µA ISB2 standby current at 3.3 V, dual-byte enable architecture, and 48-ball FBGA (9 × 7 mm) package compatibility with space-constrained PCB layouts.
Technical Context
This SRAM uses a fully decoded 128K × 16 array with separate row/column decoders and sense amplifiers. Its logic supports concurrent byte-write operations: BLE = LOW enables I/O0–I/O7 writes, BHE = LOW enables I/O8–I/O15 writes-both independent of OE/WE polarity during write cycles.
Power management relies on three distinct states: active (CE/OE/WE controlled), automatic CE power-down (ISB1 ≤ 10 µA), and deep standby (ISB2 = 1 µA when CE HIGH and BHE/BLE HIGH). All I/Os enter high-impedance state under any of four conditions: CE HIGH, OE HIGH, BHE & BLE HIGH, or WE LOW during write.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K words × 16 bits - provides 2 Mbit density with parallel 16-bit data bus interface |
| Access Time | 70 ns - defines maximum clock-to-data delay for synchronous read cycles |
| VCC Range | 2.7 V to 3.6 V - supports single-supply operation across Li-ion battery discharge profiles |
| ISB2 Standby Current | 1 µA typical at 3.3 V - enables multi-year battery life in always-on low-power nodes |
| tRC Read Cycle Time | 70 ns - sets minimum interval between successive read operations |
| Package | 48-ball FBGA (9 mm × 7 mm, 0.8 mm pitch) - surface-mount footprint optimized for high-density portable PCBs |
| Operating Temperature | –40°C to +85°C - qualified for industrial-grade reliability without derating |
Pinout & Package
Package: 48-ball Fine-Pitch Ball Grid Array (FBGA), 9 mm × 7 mm body, 0.8 mm ball pitch, RoHS-compliant lead-free finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus supporting full 128K-word addressing (A0 LSB to A16 MSB) |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface with byte-selectable direction control via BHE/BLE |
| CE | Chip Enable | Active-low global select; forces device into standby (ISB2) when HIGH |
| OE | Output Enable | Active-low control for output drivers; HIGH places I/Os in high-Z regardless of CE/WE state |
| WE | Write Enable | Active-low signal initiating write cycle; must be LOW with CE LOW and BHE/BLE LOW for valid write |
| BHE, BLE | Byte High/Low Enable | Independent active-low controls for upper/lower 8-bit data lanes; both HIGH disables all I/Os |
| VCC, VSS | Power Supply | Single 2.7–3.6 V supply and ground; no separate I/O or core voltage rails |
| NC, DNU | No Connect / Do Not Use | E3 (DNU) must float or tie to VSS; other NC pins unconnected to die |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | 1 µA ISB2 standby current at 3.3 V - reduces system sleep-mode power by >99% vs active mode |
| Dual-Byte Write Control | Independent BHE/BLE inputs allow selective 8-bit writes without masking or extra logic |
| Automatic CE Power-Down | Reduces ICC by 80% when addresses stall - eliminates need for external power-gating circuitry |
| Tri-State Output Management | I/Os enter high-Z on CE HIGH, OE HIGH, BHE/BLE HIGH, or WE LOW - prevents bus contention in shared-memory systems |
| Industrial Temperature Support | Guaranteed 70 ns timing and 1 µA ISB2 across –40°C to +85°C - suitable for fanless industrial controllers |
Applications
| Portable Medical Sensors | Industrial PLC Data Buffers |
|---|---|
Use Scenario: Continuous ECG waveform capture in handheld diagnostic devices with coin-cell battery power budget. IC Role / Device Role / Timing Role: Offloads microcontroller SRAM usage by storing 10+ seconds of 16-bit sampled data at 1 kHz. Use Value: 1 µA ISB2 enables >3-year shelf life; 70 ns access allows real-time FFT processing without DMA stalls. |
Use Scenario: Local history buffer in DIN-rail mounted programmable logic controllers handling analog I/O scan cycles. IC Role / Device Role / Timing Role: Stores last 128k samples of sensor readings for fault logging and trend analysis. Use Value: Dual-byte write enables efficient 16-bit ADC result storage; industrial temp rating ensures stable operation in uncooled enclosures. |
| Wireless IoT Edge Nodes | Automotive Body Control Modules |
Use Scenario: LoRaWAN end-node aggregating environmental sensor data before scheduled uplink bursts. IC Role / Device Role / Timing Role: Temporary storage for encrypted payload packets prior to RF transmission. Use Value: 48-ball FBGA fits compact 2-layer PCBs; automatic power-down cuts average current to <5 µA over duty-cycled operation. |
Use Scenario: Non-volatile event logging in door module ECUs recording window position, lock status, and impact events. IC Role / Device Role / Timing Role: Volatile scratchpad for timestamped diagnostics during ignition-on periods. Use Value: 2.7–3.6 V VCC range matches automotive battery transients; 70 ns tRC supports fast CAN message buffering. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV12816BLL-70NLI | Same 128K × 16 organization, 70 ns speed, but 3.3 V only (3.0–3.6 V); ISB2 = 5 µA typical | Lacks 2.7 V support - unsuitable for deep-discharge battery systems below 3.0 V | Select if system uses regulated 3.3 V rail and requires second-source availability |
| ON Semiconductor CAT21128HU4IGT3 | 128K × 16, 70 ns, but supports 1.8 V core (IO up to 3.6 V); ISB2 = 2 µA at 3.3 V | Requires level-shifting for 2.7–3.6 V-only microcontrollers; different pinout | Choose only when migrating to lower-voltage SoCs with mixed-voltage I/O domains |
Compared with IS62WV12816BLL-70NLI and CAT21128HU4IGT3, CY62137CVSL-70BAXIT offers broader VCC range (2.7–3.6 V), lowest ISB2 (1 µA), and native byte-enable compatibility-making it optimal for battery-powered industrial and portable designs where supply headroom and quiescent current are critical.
Availability
CY62137CVSL-70BAXIT is available at Aetrix Electronics and suitable for portable medical sensors, industrial PLC data buffers, and wireless IoT edge nodes requiring stable component supply, long-lifecycle support, and guaranteed Pb-free FBGA packaging.
Supply support for CY62137CVSL-70BAXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and consumer electronics.
CY62137CVSL belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for ultra-low-power portable applications where extended battery runtime and small-footprint memory expansion are essential.
FAQ
What is the minimum VCC required for reliable data retention in CY62137CVSL-70BAXIT?
The device guarantees data retention down to VCC = 1.5 V, as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤6 µA (industrial grade), enabling operation during brown-out conditions or ultra-low-power sleep modes without external backup capacitors.
Can CY62137CVSL-70BAXIT operate with only BLE asserted while BHE remains HIGH?
Yes. When BLE = LOW and BHE = HIGH, only I/O0–I/O7 are enabled for read/write; I/O8–I/O15 remain in high-impedance state. This allows true 8-bit data transfers without bus contention or external masking logic.
Is the 48-ball FBGA package of CY62137CVSL-70BAXIT compatible with standard reflow profiles?
Yes. The package is qualified for IPC/JEDEC J-STD-020D moisture sensitivity level 3 and supports standard lead-free reflow profiles with peak temperature ≤260°C. Board layout must follow Cypress's recommended pad stack (0.35 mm diameter, 0.5 mm solder mask opening).
How does automatic power-down activate when CE is HIGH?
When CE transitions HIGH, internal circuitry disables the array and precharge circuits within 70 ns (tPD), reducing ICC to ISB2 (1 µA typical). This occurs independently of address or data bus activity-no software or external control is needed to enter low-power state.
CY62137CVSL-70BAXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 2Mbit
- Memory Organization:
- 128K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-FBGA (7x7)
CY62137CVSL-70BAXIT FAQ
1.How can I place an order for CY62137CVSL-70BAXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62137CVSL-70BAXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62137CVSL-70BAXIT reliable?
The price and inventory of CY62137CVSL-70BAXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62137CVSL-70BAXIT is usually 5 days.
3.What payment methods are accepted for CY62137CVSL-70BAXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62137CVSL-70BAXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62137CVSL-70BAXIT?
CY62137CVSL-70BAXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62137CVSL-70BAXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62137CVSL-70BAXIT?
For technical support, including CY62137CVSL-70BAXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62137CVSL-70BAXIT requirements.
6.How does Aetrix verify that CY62137CVSL-70BAXIT is sourced from the original manufacturer or authorized distributors?
All CY62137CVSL-70BAXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62137CVSL-70BAXIT meets industry standards.
7.What is the process for return or replacement of CY62137CVSL-70BAXIT?
All CY62137CVSL-70BAXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62137CVSL-70BAXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62137CVSL-70BAXIT part is unused and in its original packaging.
Return procedure for CY62137CVSL-70BAXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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