Infineon Technologies CY62137EV30LL-45BVXIT
- Part No.:
- CY62137EV30LL-45BVXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62137EV30LL-45BVXIT.pdf
- Description:
- IC SRAM 2MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY62137EV30LL-45BVXIT from Cypress Semiconductor is a 2-Mbit (128 K × 16) CMOS static RAM with 45 ns access time, 2.2 V–3.6 V supply voltage range, and ultra-low standby current (max 7 µA). It supports byte-level power-down via BHE/ BLE controls and operates across industrial temperature (–40 °C to +85 °C), targeting portable memory subsystems in handheld instrumentation and low-power embedded controllers.
For engineers reviewing the CY62137EV30LL-45BVXIT datasheet, CY62137EV30LL-45BVXIT pinout, CY62137EV30LL-45BVXIT application, or CY62137EV30LL-45BVXIT equivalent, key selection criteria include verified 45 ns read/write timing, dual-byte enable interface behavior, VFBGA-48 package compatibility, and MoBL®-optimized active/standby current specs under real-world voltage and temperature conditions.
Technical Context
The device implements a fully static 128K × 16 SRAM array with independent high- and low-byte enables (BHE/BLE), enabling selective 8-bit writes without disturbing adjacent bytes. Its automatic power-down circuit reduces ICC by >90% when CE or both BHE/BLE are deasserted, with guaranteed ISB2 ≤ 7 µA at VCC = 3.6 V and TA = +85 °C.
All control inputs (CE, OE, WE, BHE, BLE) accept CMOS-level thresholds across the full 2.2–3.6 V VCC range, and output drivers meet tDOE ≤ 22 ns and tHZOE ≤ 18 ns specifications. The 48-ball VFBGA package supports fine-pitch routing for space-constrained PCBs while maintaining thermal resistance θJA = 54 °C/W.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128 K × 16 bits - provides 2 Mbit density with 16-bit parallel data bus, eliminating need for external data multiplexing. |
| Access Time | 45 ns - guarantees maximum read latency under worst-case industrial conditions (VCC = 2.2 V, TA = +85 °C). |
| VCC Range | 2.2 V to 3.6 V - supports direct interfacing with 2.5 V and 3.3 V logic families without level translation. |
| Standby Current | Max 7 µA at VCC = 3.6 V - enables multi-year battery life in always-on sensor nodes and backup memory applications. |
| Active Current | Typ 2 mA at f = 1 MHz - delivers low dynamic power during burst reads/writes in portable MCU-based systems. |
| Package | 48-ball VFBGA (6 mm × 8 mm, 0.5 mm pitch) - enables high-density layout with reduced board area vs. TSOP II alternatives. |
| Operating Temperature | –40 °C to +85 °C - qualified for industrial-grade reliability without derating in extended ambient environments. |
Pinout & Package
Package: 48-ball very fine-pitch ball grid array (VFBGA), 6 mm × 8 mm body, 0.5 mm pitch, JEDEC MO-276 compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus supporting full 128K-word addressing; no internal latching - requires stable address during CE/OE/WE assertion. |
| I/O0–I/O7 | Data Bus (Low Byte) | Bi-directional 8-bit data path enabled only when BLE = LOW; high-impedance when BLE = HIGH or CE = HIGH. |
| I/O8–I/O15 | Data Bus (High Byte) | Bi-directional 8-bit data path enabled only when BHE = LOW; isolated from low byte for true byte-select operation. |
| CE | Chip Enable | Active-LOW global select; forces all I/O into high-Z and activates automatic power-down when HIGH. |
| OE | Output Enable | Active-LOW read control; output drivers enabled only when CE and OE are LOW and WE = HIGH. |
| WE | Write Enable | Active-LOW write strobe; initiates write cycle when CE = LOW; data latched on WE falling edge. |
| BHE, BLE | Byte High/Low Enable | Independent active-LOW enables for high/low byte; both must be HIGH to place I/O in high-Z regardless of CE state. |
| VCC, VSS | Power Supply | VCC = 2.2–3.6 V; two dedicated VSS balls provide low-inductance ground return for noise-sensitive SRAM core. |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | Reduces typical active current to 2 mA at 1 MHz and limits max standby current to 7 µA - extends battery runtime in portable instrumentation. |
| Independent Byte Enables (BHE/BLE) | Enables true 8-bit writes without read-modify-write cycles, reducing bus traffic and system-level power in microcontroller peripherals. |
| Automatic Power-Down Mode | Reduces ICC by >90% when CE or both BHE/BLE are deasserted - eliminates need for external power gating logic in sleep states. |
| 45 ns Guaranteed Access Time | Meets timing requirements for 22 MHz synchronous bus interfaces without wait states in ARM Cortex-M4/M7-based designs. |
| VFBGA-48 Mechanical Compatibility | Matches footprint of CY62137CV30 and other Cypress MoBL® SRAMs - enables drop-in replacement in existing layouts with no PCB rework. |
Applications
| Portable Medical Sensors | Industrial PLC Data Buffers |
|---|---|
|
Use Scenario: Continuous acquisition of ECG waveforms in battery-powered handheld diagnostic devices requiring local buffering before wireless transmission. IC Role / Device Role / Timing Role: Primary 2-Mbit SRAM buffer interfaced directly to 16-bit ADC controller; handles burst writes at 10 kSPS with 45 ns read latency for real-time waveform preview. Use Value: 7 µA standby current enables >5-year shelf life on coin-cell power; byte-enable support minimizes bus contention during partial-frame updates. |
Use Scenario: Non-volatile data logging in DIN-rail mounted programmable logic controllers operating in unconditioned factory environments. IC Role / Device Role / Timing Role: High-reliability scratchpad memory for ladder logic execution stack and I/O image storage; accessed via 16-bit parallel bus from ARM9 host. Use Value: –40 °C to +85 °C rating ensures uninterrupted operation during thermal cycling; VFBGA package resists vibration-induced solder fatigue. |
| Wireless IoT Edge Nodes | Automotive Infotainment Telematics |
|
Use Scenario: Memory for firmware overlay and sensor fusion metadata in LoRaWAN-enabled environmental monitoring gateways deployed outdoors. IC Role / Device Role / Timing Role: Low-power SRAM used for dynamic configuration tables and encrypted packet buffers; powered from 3.3 V LDO with intermittent duty cycle. Use Value: Automatic power-down cuts active current to <1 µA during 99% idle time; 2.2 V minimum VCC supports brown-out resilience during battery sag. |
Use Scenario: Boot-time RAM for infotainment head unit firmware decompression and UI asset caching prior to loading from eMMC. IC Role / Device Role / Timing Role: Fast-access SRAM co-located with application processor; serves as temporary code/data cache during cold boot sequence. Use Value: 45 ns access time meets tight boot timing budgets; 48-ball VFBGA allows compact placement near SoC BGA with minimal trace length. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62137CV30-45ZSXI | Same 128K × 16 organization and 45 ns speed, but uses 44-pin TSOP II package and rated for commercial temperature (0 °C to +70 °C). | Lacks industrial temperature qualification and VFBGA footprint; suitable only for cost-sensitive consumer electronics with relaxed thermal requirements. | Select when board space permits TSOP II and ambient temperature stays within 0–70 °C. |
| IS61LV12816AL-10TLI | 128K × 16, 10 ns speed, 3.3 V only (3.0–3.6 V), higher ICC (max 30 mA active), no byte power-down feature. | Higher performance but consumes ~15× more active power; lacks automatic standby reduction - requires external power management. | Select only when sub-10 ns access is mandatory and system-level power budget allows >20 mA active draw. |
Compared with CY62137CV30-45ZSXI, the CY62137EV30LL-45BVXIT adds industrial temperature support and VFBGA packaging for ruggedized layouts; versus IS61LV12816AL-10TLI, it trades raw speed for MoBL®-grade power efficiency and integrated power-down logic - critical for battery longevity.
Availability
CY62137EV30LL-45BVXIT is available at Aetrix Electronics and suitable for portable medical sensors, industrial PLC data buffers, and wireless IoT edge nodes requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for CY62137EV30LL-45BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor, now part of Infineon Technologies, designs high-performance memory and microcontroller solutions for industrial, automotive, and IoT applications with emphasis on low-power integration and reliability.
This device belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for ultra-low-power memory subsystems in battery-operated portable electronics where standby current and voltage flexibility are primary design constraints.
FAQ
What is the maximum clock frequency supported for synchronous interface use?
The CY62137EV30LL-45BVXIT is an asynchronous SRAM and does not use a clock signal. Its timing is governed by setup/hold relationships between CE, OE, WE, and address transitions. The 45 ns access time corresponds to a maximum effective bus rate of approximately 22 MHz when interfaced with a synchronous controller using appropriate wait-state insertion.
Can BHE and BLE be tied permanently to logic HIGH to disable byte-select functionality?
Yes - tying BHE and BLE HIGH disables byte-level access and places all I/O pins (I/O0–I/O15) in high-impedance state regardless of CE status. This is a valid configuration for full-word-only operation, but prevents partial writes and forfeits the power savings of selective byte activation during mixed-mode access.
Does the 7 µA max standby current apply across the full industrial temperature range?
Yes - the datasheet specifies ISB2 ≤ 7 µA at VCC = 3.6 V and TA = +85 °C, representing the worst-case condition. At lower temperatures or voltages, standby current decreases further; typical ISB2 is 1 µA at 25 °C and 3.3 V.
Is the 48-ball VFBGA package RoHS-compliant and lead-free?
Yes - the "VXIT" suffix in CY62137EV30LL-45BVXIT explicitly denotes a lead-free, RoHS-compliant 48-ball VFBGA package per Cypress's ordering nomenclature and datasheet revision *I (November 2015).
CY62137EV30LL-45BVXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 2Mbit
- Memory Organization:
- 128K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62137EV30LL-45BVXIT FAQ
1.How can I place an order for CY62137EV30LL-45BVXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62137EV30LL-45BVXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62137EV30LL-45BVXIT reliable?
The price and inventory of CY62137EV30LL-45BVXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62137EV30LL-45BVXIT is usually 5 days.
3.What payment methods are accepted for CY62137EV30LL-45BVXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62137EV30LL-45BVXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62137EV30LL-45BVXIT?
CY62137EV30LL-45BVXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62137EV30LL-45BVXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62137EV30LL-45BVXIT?
For technical support, including CY62137EV30LL-45BVXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62137EV30LL-45BVXIT requirements.
6.How does Aetrix verify that CY62137EV30LL-45BVXIT is sourced from the original manufacturer or authorized distributors?
All CY62137EV30LL-45BVXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62137EV30LL-45BVXIT meets industry standards.
7.What is the process for return or replacement of CY62137EV30LL-45BVXIT?
All CY62137EV30LL-45BVXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62137EV30LL-45BVXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62137EV30LL-45BVXIT part is unused and in its original packaging.
Return procedure for CY62137EV30LL-45BVXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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