Infineon Technologies CY62137EV30LL-45ZSXI

Overview

CY62137EV30LL-45ZSXI from Cypress Semiconductor is a 2-Mbit (128 K × 16) CMOS static RAM with 45 ns access time, 2.2 V–3.6 V supply voltage range, and ultra-low standby current (max 7 µA). It supports byte-level power-down via BHE/ BLE controls and operates across –40 °C to +85 °C for industrial portable memory applications including handheld medical devices and battery-powered instrumentation.

For engineers reviewing the CY62137EV30LL-45ZSXI datasheet, CY62137EV30LL-45ZSXI pinout, CY62137EV30LL-45ZSXI application, or CY62137EV30LL-45ZSXI equivalent, key selection criteria include verified 45 ns read/write timing, dual-package availability (48-ball VFBGA / 44-pin TSOP II), MoBL® low-power architecture, and explicit CE/BHE/ BLE-controlled automatic power-down behavior.

Technical Context

This SRAM implements a 128K × 16-bit array with independent high- and low-byte enables (BHE, BLE), enabling selective 8-bit writes without disturbing adjacent bytes. Its CMOS design achieves 2 mA typical active current at 1 MHz and 1 µA typical standby current via CE- or byte-enable–driven automatic power-down.

Timing is defined by strict AC parameters: tRC = 45 ns, tDOE = 22 ns, tHZOE ≤ 18 ns, and tPD = 45 ns. Data retention is guaranteed down to 1.0 V with ICCDR ≤ 3 µA, supporting low-voltage suspend modes in energy-constrained systems.

Key Specifications

Pinout & Package

Available in 44-pin TSOP II (ZSX) and 48-ball VFBGA (ZSXI) packages. This part uses the ZSXI variant: 6 × 8 grid, 0.5 mm pitch, bottom-side solder balls, JEDEC MO-249 compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV12816BLL-45NLI and NVTFS2M16L-45Z, CY62137EV30LL-45ZSXI uniquely delivers verified 7 µA max standby with byte-selective power gating-critical for duty-cycled sensor nodes-while avoiding nonvolatile overhead and cost premiums.

Availability

CY62137EV30LL-45ZSXI is available at Aetrix Electronics and suitable for portable medical monitors, industrial data loggers, wireless sensor nodes, and programmable logic controllers requiring stable component supply and long-term industrial lifecycle support.

Supply support for CY62137EV30LL-45ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and IoT applications.

CY62137EV30 belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for ultra-low-power portable electronics requiring extended battery life without sacrificing speed or density.

FAQ

What is the maximum clock frequency supported for asynchronous read/write operations?

The CY62137EV30LL-45ZSXI is an asynchronous SRAM with no internal clock. Its 45 ns access time defines the minimum cycle period: it supports reliable operation with address/data setup/hold windows compatible with 22 MHz bus clocks. Timing validation requires adherence to tRC = 45 ns, tAA = 45 ns, and tWC = 45 ns as specified in the datasheet's switching characteristics table.

Can BHE and BLE be tied permanently LOW to enable full 16-bit operation?

Yes-tying both BHE and BLE LOW enables full 16-bit data transfer on I/O0–I/O15 during reads/writes. However, doing so disables byte-selective power-down: the device will not enter its lowest-power state unless at least one byte enable is HIGH while CE is HIGH. For optimal power savings, use dynamic BHE/ BLE control synchronized with data width requirements.

Is the 48-ball VFBGA (ZSXI) package RoHS-compliant and lead-free?

Yes-the "ZSXI" suffix denotes a Pb-free, RoHS-compliant 48-ball VFBGA package with NiPdAu surface finish and JEDEC-standard moisture sensitivity level (MSL) 3. The device meets IPC/JEDEC J-STD-020D reflow profile requirements and carries full compliance documentation under Infineon's post-acquisition quality framework.

How does automatic power-down behave when CE is HIGH but BHE and BLE are LOW?

Automatic power-down activates only when CE is HIGH *or* when both BHE and BLE are HIGH. If CE is HIGH while BHE/ BLE are LOW, the device remains fully powered but outputs are placed in high-Z state. Active current drops only when CE is HIGH *and* all inputs stabilize-no current reduction occurs solely due to BHE/ BLE being LOW while CE is HIGH.