Infineon Technologies CY62137EV30LL-45ZSXIT

Overview

CY62137EV30LL-45ZSXIT from Cypress Semiconductor is a 2-Mbit (128 K × 16) CMOS static RAM with 45 ns access time, 2.2 V to 3.6 V supply voltage range, and ultra-low standby current (max 7 µA). It supports byte-level power-down via BHE/ BLE controls and operates in industrial temperature range (–40 °C to +85 °C). Used in portable embedded systems requiring low-power, non-volatile data buffering such as cellular baseband subsystems.

For engineers reviewing the CY62137EV30LL-45ZSXIT datasheet, CY62137EV30LL-45ZSXIT pinout, CY62137EV30LL-45ZSXIT application, or CY62137EV30LL-45ZSXIT equivalent, this page delivers verified package mapping (48-ball VFBGA), functional pin roles, MoBL®-optimized power behavior, and direct alternatives for memory expansion in battery-constrained designs.

Technical Context

The CY62137EV30LL-45ZSXIT implements a 128K × 16 asynchronous SRAM architecture with independent byte enable (BHE/BLE) control for selective 8-bit writes, enabling efficient partial-word updates without full 16-bit bus activity. Its automatic CE- or byte-enable-triggered power-down reduces active-to-standby transition time to ≤45 ns.

It uses CMOS process technology optimized for speed/power trade-off at 2.2–3.6 V, with tri-state outputs controlled by CE, OE, BHE, and BLE logic. Data retention is guaranteed down to 1.0 V with ICCDR ≤3 µA, supporting low-voltage suspend modes in host processors.

Key Specifications

Pinout & Package

Package: 48-ball very fine-pitch ball grid array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Compared with IS61WV12816BLL-10MLI and AS6C4008-55ZIN, the CY62137EV30LL-45ZSXIT uniquely balances sub-50 ns speed, µA-level standby, and true byte-select capability - making it optimal for portable systems requiring both performance and multi-year battery operation.

Availability

CY62137EV30LL-45ZSXIT is available at Aetrix Electronics and suitable for cellular baseband subsystems, industrial HMIs, portable medical diagnostics, and automotive infotainment audio buffering requiring stable component supply across extended product lifecycles.

Supply support for CY62137EV30LL-45ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance, low-power semiconductor solutions for embedded systems, with expertise in memory, PSoC, and USB connectivity.

This device belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for portable electronics where extended battery life, fast access, and robust low-voltage operation are critical design requirements.

FAQ

What is the maximum clock frequency supported for continuous read/write cycling?

The CY62137EV30LL-45ZSXIT is an asynchronous SRAM with no internal clock. Its 45 ns access time supports sustained bus transaction rates up to 22.2 MHz (1/45 ns) when interfaced with microcontrollers or ASICs using proper setup/hold timing. Maximum sustained throughput depends on external controller timing margins and PCB signal integrity.

Does this SRAM require external refresh circuitry?

No. The CY62137EV30LL-45ZSXIT is a static RAM (SRAM), not dynamic RAM (DRAM). It retains data indefinitely as long as VCC remains within specification and CE is held LOW during active use. No refresh cycles, timers, or external circuitry are needed - simplifying system design and reducing firmware overhead.

Can BHE and BLE be tied permanently to logic LOW for full 16-bit operation?

Yes. Tying both BHE and BLE LOW enables full 16-bit data transfers on I/O0–I/O15 simultaneously. This configuration is functionally identical to standard 16-bit SRAM operation and maintains all timing specifications. However, doing so forfeits byte-select power savings during partial writes.

Is the 48-ball VFBGA package compatible with standard reflow profiles?

Yes. The CY62137EV30LL-45ZSXIT's Pb-free VFBGA package is qualified for IPC/JEDEC J-STD-020D reflow profiles, including peak temperatures up to 260 °C for 10 seconds. Recommended profile includes ramp rate ≤3 °C/s, preheat 150–200 °C for 60–120 s, and time above liquidus 217 °C of 60–150 s.