Infineon Technologies CY62137FV18LL-55BVXI

Overview

CY62137FV18LL-55BVXI from Cypress Semiconductor is a 2-Mbit (128 K × 16) low-voltage CMOS static RAM with 55 ns access time, 1.65–2.25 V supply range, and ultra-low standby current (1 µA typical). It features byte power-down, automatic power-down on deselect, and pin compatibility with CY62137CV18. Used in battery-powered portable electronics requiring fast, deterministic memory access with minimal quiescent draw.

For engineers reviewing the CY62137FV18LL-55BVXI datasheet, CY62137FV18LL-55BVXI pinout, CY62137FV18LL-55BVXI application, or CY62137FV18LL-55BVXI equivalent, key selection criteria include V_CC operating range, t_RC timing, ISB2 standby current, byte enable control logic, and 48-ball VFBGA footprint compatibility.

Technical Context

This SRAM implements a synchronous, non-volatile-retentive, static memory array organized as 128K words × 16 bits with independent byte-level write enables (BHE/BLE). Its CMOS architecture supports full-speed operation at 1.8 V nominal while maintaining sub-2.5 mA active ICC at 1 MHz.

Power management relies on dual-mode automatic power-down: triggered either by CE HIGH or simultaneous BHE/BLE HIGH, reducing ICC to ≤5 µA. Output drivers enter high-Z state during deselect, OE HIGH, or active write-ensuring clean bus sharing without external isolation.

Key Specifications

Pinout & Package

48-ball Very Fine-Pitch Ball Grid Array (VFBGA), 6.0 mm × 8.0 mm body, 0.5 mm ball pitch, JEDEC MO-249 compliant. Thermal resistance θ_JA = 75 °C/W (still air).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-voltage SRAM applications.

Compared with IS62WV12816BLL-55NLI and R1LV25616AS-5SI#S0, CY62137FV18LL-55BVXI uniquely delivers sub-2.5 mA active current at 1 MHz and 1 µA standby within a 1.65–2.25 V window-making it the sole choice for energy-harvesting and single-cell Li-ion embedded systems demanding both speed and ultra-low quiescent power.

Availability

CY62137FV18LL-55BVXI is available at Aetrix Electronics and suitable for cellular baseband subsystems, industrial PLC data buffers, wearable health monitors, and automotive infotainment display caches requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY62137FV18LL-55BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance, low-power memory and microcontroller solutions for embedded systems, with emphasis on reliability and integration.

The MoBL® (More Battery Life™) SRAM product line targets portable and energy-constrained applications requiring deterministic timing, ultra-low standby current, and seamless integration with low-voltage processors.

FAQ

What is the minimum V_CC required to retain data in CY62137FV18LL-55BVXI?

Data retention is guaranteed down to V_CC = 1.0 V, with ICCDR ≤ 4 µA under those conditions. The device enters data retention mode automatically when CE or both BHE/BLE are held HIGH while V_CC remains ≥1.0 V. No external control signal is needed-this is a hardware-level feature activated by voltage and enable pin states.

Can CY62137FV18LL-55BVXI operate reliably at 1.65 V across the full industrial temperature range?

Yes. The datasheet specifies full AC/DC operation from –40 °C to +85 °C at V_CC = 1.65 V to 2.25 V. All timing parameters-including tRC = 55 ns max and tDOE = 25 ns max-are guaranteed across this voltage and temperature range, with no derating required for industrial-grade use.

How does byte enable (BHE/BLE) interaction affect power consumption during partial writes?

Asserting only one byte enable (e.g., BLE = LOW, BHE = HIGH) activates only the corresponding I/O byte while placing the other byte's drivers in high-Z. This reduces dynamic switching current by ~50% compared to full 16-bit writes, directly lowering ICC during mixed-width memory operations without software overhead.

Is the 48-ball VFBGA package of CY62137FV18LL-55BVXI compatible with standard reflow profiles?

Yes. The Pb-free VFBGA package is qualified for IPC/JEDEC J-STD-020D moisture sensitivity level 3 and supports standard lead-free reflow profiles with peak temperatures up to 260 °C. Thermal resistance (θ_JA = 75 °C/W) is characterized on a 2-layer 3″ × 4.5″ PCB, confirming suitability for automated SMT assembly without special thermal management.