Infineon Technologies CY62137FV18LL-55BVXIT

Overview

CY62137FV18LL-55BVXIT from Cypress Semiconductor is a 2-Mbit (128 K × 16) CMOS static RAM with 55 ns access time, 1.65–2.25 V supply range, and ultra-low standby current (1 µA typical). It supports byte-level power-down via BHE/ BLE controls and operates in industrial temperature range (–40 °C to +85 °C), targeting battery-powered portable memory subsystems such as cellular baseband processors.

For engineers reviewing the CY62137FV18LL-55BVXIT datasheet, CY62137FV18LL-55BVXIT pinout, CY62137FV18LL-55BVXIT application, or CY62137FV18LL-55BVXIT equivalent, key selection criteria include its VFBGA-48 package compatibility, 16-bit data bus width, automatic power-down behavior on CE/BHE/ BLE deassertion, and MoBL® low-power architecture optimized for mobile SoC memory interfaces.

Technical Context

This SRAM implements a synchronous, non-volatile-retentive, high-speed memory array organized as 128K words × 16 bits, with independent byte enable control (BHE/BLE) enabling selective 8-bit writes without disturbing adjacent bytes. Its CMOS design ensures deterministic timing across voltage and temperature, with all AC parameters guaranteed at 55 ns max read cycle time under full industrial conditions.

The device uses automatic power-down logic triggered by CE HIGH or simultaneous BHE/BLE HIGH, reducing ICC to ≤5 µA. Output drivers enter high-impedance state during deselection, OE HIGH, or active write (WE LOW), supporting multi-drop bus sharing and seamless memory expansion using CE/OE cascading.

Key Specifications

Pinout & Package

Package: 48-ball Very Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant, lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV12816BLL-55NLI and AS6C4008-55ZIN, the CY62137FV18LL-55BVXIT uniquely supports 1.65–2.25 V operation and VFBGA-48 packaging-critical for space- and power-constrained mobile and wearable designs where voltage scaling and miniaturization are mandatory.

Availability

CY62137FV18LL-55BVXIT is available at Aetrix Electronics and suitable for mobile baseband subsystems, industrial data loggers, medical wearables, and automotive infotainment UI caches requiring stable component supply across extended product lifecycles.

Supply support for CY62137FV18LL-55BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in programmable system-on-chip (PSoC), memory, and USB-C solutions for embedded and industrial markets.

The CY62137FV18 belongs to Cypress's MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-voltage, ultra-low-power memory applications in portable and battery-operated electronics.

FAQ

What is the minimum VCC required to retain data in CY62137FV18LL-55BVXIT?

The device guarantees data retention down to 1.0 V (VDR), as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤4 µA, and the memory retains stored bits indefinitely as long as CE or both BHE/BLE remain asserted. This enables robust operation during brown-out recovery and controlled low-power suspend modes.

Does CY62137FV18LL-55BVXIT support true 16-bit concurrent reads/writes?

Yes-when both BHE and BLE are LOW, all 16 I/O lines (I/O0–I/O15) are simultaneously active for full-word access. The internal array is natively 128K × 16, and the byte-enable logic does not serialize or gate the data path during full-word operations; timing parameters like tAA and tWC apply to the complete 16-bit transfer.

Can unused NC pins in the VFBGA-48 package be left floating or must they be tied?

NC pins (D3, H1, G2, H6, H3) are not connected internally and may be left floating per datasheet Note 2. No pull-up, pull-down, or grounding is required. However, routing them as no-connects in layout avoids accidental shorts; solder mask should fully cover these pads to prevent bridging during reflow.

How does automatic power-down behave when only CE is HIGH but BHE/BLE are LOW?

Automatic power-down activates only when CE is HIGH *or* both BHE and BLE are HIGH (logical AND). If CE is HIGH while either BHE or BLE remains LOW, the device stays in standby-not active-but does not enter the ultra-low ISB2 state (≤5 µA); instead, it draws higher current due to enabled byte circuitry. Full power-down requires CE HIGH *or* BHE/BLE both HIGH.