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Infineon Technologies CY62137FV30LL-45BVI
- Part No.:
- CY62137FV30LL-45BVI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62137FV30LL-45BVI.pdf
- Description:
- IC SRAM 2MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,104
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Product details
Overview
CY62137FV30LL-45BVI from Cypress Semiconductor is a 2-Mbit (128 K × 16) CMOS static RAM with 45 ns access time, 2.2 V–3.6 V supply voltage, and industrial temperature range (–40 °C to +85 °C). It delivers ultra-low standby current (1 µA typical), supports byte-level power-down via BHE/ BLE, and is used in battery-constrained portable systems such as cellular handsets and handheld medical devices.
For engineers reviewing the CY62137FV30LL-45BVI datasheet, CY62137FV30LL-45BVI pinout, CY62137FV30LL-45BVI application, or CY62137FV30LL-45BVI equivalent, key selection criteria include its 48-ball VFBGA package compatibility, MoBL® low-power architecture, dual-byte enable control, and automatic power-down behavior under CE/BHE/ BLE high conditions.
Technical Context
The CY62137FV30LL-45BVI implements a 128K × 16 asynchronous SRAM array with independent byte enable (BHE/BLE) logic enabling selective 8-bit writes without disturbing adjacent bytes. Its CMOS design integrates automatic power-down circuitry that activates when CE is HIGH or both BHE and BLE are HIGH, reducing ICC to ≤5 µA.
Timing is defined by strict AC parameters including tRC = 45 ns, tDOE = 22 ns, and tPD = 45 ns, with all outputs entering high-impedance state within 18 ns of OE/CE/BHE/BLE deassertion. Data retention operates down to VCC = 1.5 V with ICCDR ≤4 µA, supporting extended battery-off memory hold.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 2 Mbit (128 K × 16) - provides 256 KB of fast, non-volatile-retentive storage for firmware buffers and real-time data logging |
| Access time | 45 ns - enables direct interface with legacy microcontrollers running at ≤22 MHz without wait states |
| Supply voltage | 2.2 V–3.6 V - compatible with single Li-ion battery (3.0–3.6 V) and regulated 2.5 V/3.3 V rails |
| Standby current | 1 µA typical / 5 µA max (industrial) - extends battery life in sleep-mode portable electronics |
| Active current | 1.6 mA typical at 1 MHz - minimizes thermal load in compact enclosures with limited airflow |
| Data retention voltage | 1.5 V minimum - sustains memory contents during brown-out or battery swap without backup capacitor |
| Operating temperature | –40 °C to +85 °C - qualified for industrial-grade embedded control and automotive infotainment head units |
Pinout & Package
Package: 48-ball VFBGA (5 mm × 6 mm, 0.5 mm pitch), RoHS-compliant, lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address inputs | 17-bit address bus supporting full 128K-word addressing; A16 required for top half of memory map |
| I/O0–I/O7 | Byte-low data I/O | Bi-directional 8-bit data path enabled only when BLE = LOW; tri-stated otherwise |
| I/O8–I/O15 | Byte-high data I/O | Bi-directional 8-bit data path enabled only when BHE = LOW; independent of BLE state |
| CE | Chip enable | Active-LOW global select; forces automatic power-down and high-Z outputs when HIGH |
| OE | Output enable | Active-LOW read control; disables outputs (high-Z) when HIGH, regardless of CE state |
| WE | Write enable | Active-LOW write strobe; initiates write cycle only when CE = LOW and BHE/BLE active |
| BHE | Byte high enable | Active-LOW control for I/O8–I/O15; enables partial writes without affecting low byte |
| BLE | Byte low enable | Active-LOW control for I/O0–I/O7; enables partial writes without affecting high byte |
| VCC | Power supply | Two dedicated VCC balls (pins E1, F1) reduce IR drop and improve noise immunity |
| VSS | Ground | Three VSS balls (pins D3, G2, H3) provide low-inductance return paths for I/O and core logic |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® ultra-low power | 1 µA typical standby current enables >1-year battery life in always-on sensor nodes with periodic wake-up |
| Byte-selectable write | Independent BHE/BLE pins allow 8-bit writes to either half of 16-bit word, eliminating read-modify-write overhead |
| Automatic power-down | Hardware-triggered entry into sub-5 µA mode when CE HIGH or both BHE/BLE HIGH - no software intervention needed |
| 1.5 V data retention | Maintains stored data during deep sleep or battery replacement without external backup power or capacitors |
| Pb-free VFBGA packaging | 48-ball 5×6 mm footprint supports high-density PCB layouts and automated reflow assembly per JEDEC J-STD-020 |
Applications
| Cellular Handset Baseband | Portable Medical Monitor |
|---|---|
|
Use Scenario: Stores real-time ECG waveform samples and calibration coefficients between Bluetooth transmission bursts. IC Role / Device Role / Timing Role: Asynchronous buffer memory interfacing directly with ARM9-based baseband processor via 16-bit parallel bus. Use Value: 45 ns access ensures zero-wait-state operation at 22 MHz bus clock; 1 µA standby extends 3.7 V Li-ion battery runtime to >72 hours in monitoring mode. |
Use Scenario: Holds patient vital sign history and alarm thresholds during intermittent LCD refresh and wireless telemetry cycles. IC Role / Device Role / Timing Role: Dual-port-capable SRAM serving as shared scratchpad between MCU and analog front-end ASIC. Use Value: Byte-enable functionality allows independent updates to timestamp (low byte) and value (high byte), avoiding race conditions during concurrent reads/writes. |
| Industrial PLC I/O Module | Automotive Infotainment Head Unit |
|
Use Scenario: Caches digital input status and output command history for deterministic scan-cycle execution in harsh EMI environments. IC Role / Device Role / Timing Role: Non-volatile-retentive shadow RAM holding last-known I/O state during brief 24 VDC brown-outs. Use Value: 1.5 V data retention guarantees memory integrity across 100 ms power interruptions without supercapacitor support. |
Use Scenario: Buffers audio codec FIFOs and UI graphics overlays during dynamic CPU frequency scaling and display backlight dimming. IC Role / Device Role / Timing Role: Low-noise, low-power SRAM decoupled from main SoC power domain to minimize RF interference in AM/FM reception. Use Value: Dual VCC/VSS ball layout suppresses switching noise coupling into sensitive RF sections, improving SNR by ≥3 dB. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar 2-Mbit asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 10 ns access time, 3.3 V only (3.0–3.6 V), 44-pin TSOP II package, no byte power-down feature | Higher speed but higher active current (3.5 mA typical); lacks automatic power-down and 2.2 V operation | Select when system requires <10 ns timing and uses fixed 3.3 V rail; avoid where battery life or wide-VCC flexibility is critical |
| AS6C4008-55ZIN | 55 ns access, 2.7–3.6 V, 48-ball VFBGA, no BHE/BLE pins - single 16-bit I/O port only | Lower cost but no byte-select capability; standby current 2 µA typical - less aggressive than CY62137FV30LL-45BVI's 1 µA | Select for cost-sensitive consumer electronics where partial writes are unnecessary and 45 ns timing margin is acceptable |
Compared with IS61LV25616AL-10TLI and AS6C4008-55ZIN, the CY62137FV30LL-45BVI uniquely balances ultra-low standby power, 2.2 V operability, and hardware byte enable - making it optimal for portable designs requiring both energy efficiency and flexible memory access granularity.
Availability
CY62137FV30LL-45BVI is available at Aetrix Electronics and suitable for cellular handset baseband subsystems, portable medical monitors, and industrial PLC I/O modules requiring stable component supply across extended product lifecycles.
Supply support for CY62137FV30LL-45BVI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets.
The MoBL® (More Battery Life™) SRAM product line targets portable and energy-constrained systems, emphasizing ultra-low standby current, wide VCC tolerance, and robust data retention - directly addressing battery-powered embedded memory bottlenecks.
FAQ
What is the minimum VCC required to retain data in CY62137FV30LL-45BVI?
The device guarantees data retention down to VCC = 1.5 V, as specified in the Data Retention Characteristics table (page 6). At this voltage, ICCDR remains ≤4 µA under industrial conditions. This enables reliable memory hold during brown-out events or battery replacement without external backup components.
Does CY62137FV30LL-45BVI support true 8-bit write operations without read-modify-write?
Yes. The independent BHE and BLE inputs allow simultaneous or separate activation of high-byte (I/O8–I/O15) and low-byte (I/O0–I/O7) paths. When only BLE = LOW, only I/O0–I/O7 are written; when only BHE = LOW, only I/O8–I/O15 are written - eliminating need for read-modify-write sequences.
How does automatic power-down activate, and what signals trigger it?
Automatic power-down engages when CE is HIGH *or* when both BHE and BLE are HIGH - regardless of OE or WE state. In this mode, ICC drops to ≤5 µA, outputs enter high-Z, and internal logic enters minimal-power state. No software command or external control is required.
Is the 48-ball VFBGA pinout compatible with other CY62137x variants?
Yes. The CY62137FV30LL-45BVI shares identical 48-ball VFBGA pinout with CY62137FV30L-45BAX and CY62137FV30L-45BVX. Pin functions, ball assignments, and thermal pad configuration are fully consistent across these industrial-grade variants per Figure 1 in the datasheet.
CY62137FV30LL-45BVI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 2Mbit
- Memory Organization:
- 128K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62137FV30LL-45BVI FAQ
1.How can I place an order for CY62137FV30LL-45BVI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62137FV30LL-45BVI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62137FV30LL-45BVI reliable?
The price and inventory of CY62137FV30LL-45BVI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62137FV30LL-45BVI is usually 5 days.
3.What payment methods are accepted for CY62137FV30LL-45BVI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62137FV30LL-45BVI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62137FV30LL-45BVI?
CY62137FV30LL-45BVI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62137FV30LL-45BVI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62137FV30LL-45BVI?
For technical support, including CY62137FV30LL-45BVI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62137FV30LL-45BVI requirements.
6.How does Aetrix verify that CY62137FV30LL-45BVI is sourced from the original manufacturer or authorized distributors?
All CY62137FV30LL-45BVI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62137FV30LL-45BVI meets industry standards.
7.What is the process for return or replacement of CY62137FV30LL-45BVI?
All CY62137FV30LL-45BVI units undergo pre-shipment inspection (PSI). If there is an issue with CY62137FV30LL-45BVI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62137FV30LL-45BVI part is unused and in its original packaging.
Return procedure for CY62137FV30LL-45BVI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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