Infineon Technologies CY62137FV30LL-45BVXI

Overview

CY62137FV30LL-45BVXI from Cypress Semiconductor is a 2-Mbit (128 K × 16) MoBL® CMOS static RAM with 45 ns access time, 2.2 V–3.6 V supply voltage, and industrial temperature range (–40 °C to +85 °C). It delivers ultra-low active current (1.6 mA at 1 MHz), 1 µA typical standby current, and supports byte-level power-down for portable battery-powered systems including cellular handsets and handheld instrumentation.

For engineers reviewing the CY62137FV30LL-45BVXI datasheet, CY62137FV30LL-45BVXI pinout, CY62137FV30LL-45BVXI application, or CY62137FV30LL-45BVXI equivalent, key selection criteria include 45 ns read cycle time, dual-byte enable (BHE/ BLE) control, automatic power-down on CE or BHE/ BLE deassertion, and Pb-free 48-ball VFBGA packaging compatible with legacy CY62137CV/CV25/CV30/CV33 families.

Technical Context

This SRAM implements a 128K × 16-bit array with full CMOS architecture optimized for low-power, high-speed operation in portable electronics. Its logic block includes independent byte-enable decoding (I/O0–I/O7 via BLE, I/O8–I/O15 via BHE), automatic power-down circuitry triggered by CE HIGH or simultaneous BHE/BLE HIGH, and tristate output control synchronized to OE, CE, and byte enables.

Switching behavior is defined by strict timing parameters: tRC = 45 ns, tDOE = 22 ns, tHZOE ≤ 18 ns, and tPD = 45 ns. Data retention operates down to VCC = 1.5 V with ICCDR ≤ 4 µA, enabling extended battery backup without external refresh.

Key Specifications

Pinout & Package

Package: 48-ball very fine-pitch ball grid array (VFBGA), RoHS-compliant, 6 mm × 8 mm footprint, 0.5 mm ball pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV12816BLL-45NLI and NCS2116M16-45G, CY62137FV30LL-45BVXI uniquely balances 2.2 V operation, 1 µA standby, and byte-selectable power-down-making it optimal for battery-constrained portable systems where volatility is acceptable and voltage headroom is limited.

Availability

CY62137FV30LL-45BVXI is available at Aetrix Electronics and suitable for cellular handset memory, portable medical instrumentation, and industrial handheld terminals requiring stable component supply, long-term lifecycle support, and Pb-free compliance.

Supply support for CY62137FV30LL-45BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, microcontrollers, and programmable solutions for embedded systems.

CY62137FV30 belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power portable electronics where extended battery runtime and small form factor are critical design constraints.

FAQ

What is the minimum VCC required to retain data in CY62137FV30LL-45BVXI?

The device guarantees data retention down to VCC = 1.5 V under industrial conditions, with maximum data retention current (ICCDR) of 4 µA. This allows memory contents to persist during brown-out events or battery replacement without external backup capacitors or non-volatile storage.

How does automatic power-down activate, and what signals trigger it?

Automatic power-down activates when Chip Enable (CE) is HIGH, or when both Byte High Enable (BHE) and Byte Low Enable (BLE) are HIGH. In either condition, the device enters ultra-low-power mode with ICC ≤ 5 µA, and all outputs go high-impedance regardless of OE or WE state.

Can CY62137FV30LL-45BVXI operate reliably at 2.2 V while maintaining 45 ns access time?

Yes-the 45 ns access time specification is fully guaranteed across the entire industrial VCC range (2.2 V–3.6 V). Electrical characteristics tables confirm tAA ≤ 45 ns and tRC ≤ 45 ns at VCC = 2.2 V, with corresponding VOH/VOL levels meeting CMOS interface requirements.

Is the 48-ball VFBGA package compatible with standard reflow soldering processes?

Yes-the package complies with IPC/JEDEC J-STD-020 moisture sensitivity level 3 and supports standard lead-free reflow profiles (peak temperature ≤ 260 °C). Dual VCC/VSS balls and symmetric layout enhance thermal uniformity and reduce warpage risk during assembly.