Infineon Technologies CY62137FV30LL-45BVXIT

Overview

CY62137FV30LL-45BVXIT from Cypress Semiconductor is a 2-Mbit (128 K × 16) CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and industrial temperature rating (–40 °C to +85 °C). It features ultra-low standby current (1 µA typical), byte power-down capability, and automatic power-down when deselected-enabling extended battery life in portable electronics such as cellular handsets and handheld medical devices.

For engineers reviewing the CY62137FV30LL-45BVXIT datasheet, CY62137FV30LL-45BVXIT pinout, CY62137FV30LL-45BVXIT application, or CY62137FV30LL-45BVXIT equivalent, key selection considerations include its 48-ball VFBGA package, dual-byte enable (BHE/BLE) architecture, 128K × 16 organization, MoBL® low-power design, and compatibility with legacy CY62137 series SRAMs.

Technical Context

This SRAM implements a fully static, asynchronous memory array with independent high- and low-byte control via BHE and BLE pins, enabling partial-word writes without external logic. Its CMOS design achieves 1.6 mA typical active current at 1 MHz and supports data retention down to 1.5 V.

The device uses address decoding across A0–A16 (17-bit address bus) and I/O0–I/O15 (16-bit bidirectional data bus), with CE, OE, and WE controlling chip select, output enable, and write enable functions respectively. Power-down is triggered by CE HIGH or simultaneous BHE/BLE HIGH, reducing ICC to ≤5 µA.

Key Specifications

Pinout & Package

Package: 48-ball VFBGA (Very Fine-Pitch Ball Grid Array), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS61LV25616AL-10TLI and AS6C4008-55TIN, the CY62137FV30LL-45BVXIT uniquely delivers 45 ns speed with 2.2 V minimum operation, integrated byte control, and sub-5 µA industrial standby-making it optimal for energy-constrained, voltage-flexible portable systems requiring deterministic 16-bit access.

Availability

CY62137FV30LL-45BVXIT is available at Aetrix Electronics and suitable for cellular handset memory buffers, portable medical monitor data caches, and industrial PLC I/O mapping requiring stable component supply across long-lifecycle embedded programs.

Supply support for CY62137FV30LL-45BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance, low-power semiconductor solutions for embedded systems, IoT, and automotive applications.

The CY62137FV30 belongs to the MoBL® (More Battery Life™) SRAM product line-engineered specifically for portable electronics demanding ultra-low standby current, wide voltage operation, and seamless integration with battery-powered microcontrollers.

FAQ

What is the minimum VCC required to retain data in CY62137FV30LL-45BVXIT?

The device guarantees data retention down to 1.5 V VCC, as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤4 µA under industrial conditions. This allows safe suspend-to-RAM operation during brownout events without external backup capacitors or nonvolatile storage.

Does CY62137FV30LL-45BVXIT require external pull-up resistors on BHE and BLE pins?

No-BHE and BLE are CMOS-compatible inputs with no internal pull-ups. However, to meet ISB1/ISB2 standby current specifications, they must be actively driven to valid CMOS logic levels (≤0.2 V for LOW, ≥VCC–0.2 V for HIGH); floating states increase leakage and violate datasheet limits.

Can CY62137FV30LL-45BVXIT operate reliably at 2.2 V with 45 ns access time?

Yes-the 45 ns access time is fully characterized and guaranteed over the entire industrial voltage range (2.2 V–3.6 V). The Electrical Characteristics table explicitly lists tAA, tACE, and tRC parameters with min/max values confirmed at 2.2 V, ensuring timing compliance in low-voltage battery-depleted conditions.

How does the automatic power-down feature activate in CY62137FV30LL-45BVXIT?

Automatic power-down activates when either CE is HIGH or both BHE and BLE are HIGH. In this state, internal circuitry reduces ICC to ≤5 µA while placing all I/Os in high-impedance. No clock or control sequence is needed-the transition occurs synchronously with input level changes, eliminating firmware intervention.