Infineon Technologies CY62137FV30LL-45ZSXI

Overview

CY62137FV30LL-45ZSXI from Cypress Semiconductor is a 2-Mbit (128 K × 16) CMOS static RAM with 45 ns access time, 2.2–3.6 V supply voltage, and industrial temperature range (–40 °C to +85 °C). It delivers ultra-low standby current (1 µA typical), supports byte-level power-down via BHE/ BLE, and is used in battery-constrained portable systems such as cellular handsets and handheld medical devices.

For engineers reviewing the CY62137FV30LL-45ZSXI datasheet, CY62137FV30LL-45ZSXI pinout, CY62137FV30LL-45ZSXI application, or CY62137FV30LL-45ZSXI equivalent, key selection criteria include its 48-ball VFBGA package compatibility, 16-bit data bus width, automatic power-down behavior under CE/BHE/ BLE high conditions, and MoBL® low-power architecture for extended battery runtime.

Technical Context

The CY62137FV30LL-45ZSXI implements a full CMOS SRAM array with independent byte enable control (BHE/BLE), enabling selective 8-bit writes to upper or lower data bytes without disturbing adjacent memory locations. Its automatic power-down circuit activates when CE is HIGH or both BHE and BLE are HIGH, reducing ICC to ≤5 µA.

It supports three distinct read modes (address-controlled, OE-controlled, and CE-controlled) and two write modes (WE-controlled with OE HIGH or LOW), with guaranteed timing parameters including tRC = 45 ns, tDOE = 22 ns, and tPD = 45 ns. All I/O pins enter high-impedance state during deselect, OE HIGH, or active write cycles.

Key Specifications

Pinout & Package

Package: 48-ball very fine-pitch ball grid array (VFBGA), RoHS-compliant, 6 mm × 8 mm body, 0.5 mm ball pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV12816BLL-45NLI and AS6C4008-45TIN, the CY62137FV30LL-45ZSXI uniquely combines VFBGA packaging, true dual-voltage operation (2.2–3.6 V), and hardware byte power-down - making it optimal for next-gen compact, battery-powered embedded systems requiring flexible power management.

Availability

CY62137FV30LL-45ZSXI is available at Aetrix Electronics and suitable for cellular handset baseband, portable medical monitors, and industrial handheld terminals requiring stable component supply across long production lifecycles.

Supply support for CY62137FV30LL-45ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in programmable system-on-chip (PSoC), memory, and USB-C solutions for embedded applications.

The CY62137FV30 belongs to Cypress's MoBL® (More Battery Life) SRAM product line, engineered specifically for ultra-low-power portable electronics where extended runtime and compact packaging are mandatory design constraints.

FAQ

What is the minimum VCC required to retain data in CY62137FV30LL-45ZSXI?

The device guarantees data retention down to VCC = 1.5 V, as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤4 µA under industrial conditions. This enables graceful low-power suspend modes without external backup power or non-volatile storage.

Does CY62137FV30LL-45ZSXI support true partial-byte writes without read-modify-write cycles?

Yes. When only BLE is LOW (BHE HIGH), only I/O0–I/O7 are written; when only BHE is LOW (BLE HIGH), only I/O8–I/O15 are written. The unselected byte remains undisturbed - eliminating need for external read-modify-write logic or additional memory bandwidth.

How does automatic power-down activate, and what signals must be controlled?

Automatic power-down engages when CE is HIGH *or* both BHE and BLE are HIGH. Inputs must be driven to valid CMOS levels (VIL < 0.8 V, VIH > 2.2 V at 3.3 V); floating inputs may prevent reliable entry into standby mode and increase ISB beyond 5 µA.

Is the 48-ball VFBGA pinout compatible with standard PCB layout rules for fine-pitch BGAs?

Yes. The 0.5 mm ball pitch and 6 mm × 8 mm body comply with IPC-7351B Class B standards. Recommended pad diameter is 0.3 mm with 0.25 mm solder mask opening; thermal vias under VSS/VCC balls improve heat dissipation and solder joint reliability.