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Infineon Technologies CY62137FV30LL-55ZSXET
- Part No.:
- CY62137FV30LL-55ZSXET
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY62137FV30LL-55ZSXET.pdf
- Description:
- IC SRAM 2MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:1,248
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Product details
Overview
CY62137FV30LL-55ZSXET from Cypress Semiconductor is a 2-Mbit (128 K × 16) automotive-grade CMOS static RAM with 45 ns access time (Automotive-A grade), 2.2 V–3.6 V supply range, –40 °C to +85 °C operating temperature, and ultra-low standby current (1 µA typical). It supports byte-level power-down via BHE/ BLE controls and is used in engine control units and ADAS domain controllers requiring nonvolatile data retention during low-power states.
For engineers reviewing the CY62137FV30LL-55ZSXET datasheet, CY62137FV30LL-55ZSXET pinout, CY62137FV30LL-55ZSXET application, or CY62137FV30LL-55ZSXET equivalent, this page delivers verified timing parameters, TSOP II package mapping, automotive qualification details, and functional substitution guidance for memory subsystem design.
Technical Context
The CY62137FV30LL-55ZSXET implements a 128K × 16 asynchronous SRAM array with dual-byte enable (BHE/BLE) architecture enabling independent 8-bit writes. Its automatic power-down logic activates when CE is HIGH or both BHE and BLE are HIGH, reducing ICC to ≤5 µA.
It uses CMOS process technology optimized for MoBL® (More Battery Life™), delivering 1.6 mA typical active current at 1 MHz and supporting data retention down to 1.5 V. The device complies with Automotive-A temperature grading (–40 °C to +85 °C) and meets AEC-Q100 stress test requirements per Cypress documentation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128 K × 16 bits - provides 262,144 bytes of fast random-access storage with 16-bit parallel bus interface |
| Access Time | 45 ns - guarantees maximum read latency under Automotive-A conditions (VCC = 2.2–3.6 V, TA = –40 °C to +85 °C) |
| Supply Voltage Range | 2.20 V–3.60 V - enables direct interfacing with 2.5 V and 3.3 V microcontrollers without level-shifting |
| Standby Current | 1 µA typical / 5 µA max - ensures <1 µW quiescent power in sleep mode for battery-backed systems |
| Operating Temperature | –40 °C to +85 °C - qualified for under-hood and cabin-mounted automotive electronics per AEC-Q100 |
| Package | 44-pin TSOP II - surface-mount footprint compatible with automated PCB assembly and thermal management up to 57.92 °C/W θJA |
| Data Retention Voltage | 1.5 V minimum - allows memory contents to persist during brown-out or backup-battery operation |
Pinout & Package
44-pin Thin Small Outline Package (TSOP II), 400 mil width, JEDEC MO-143AC compliant. Pin 1 index marked by notch or dot; pins 1–22 on top row, 23–44 on bottom row.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus supporting full 128K-word addressing; TTL/CMOS-compatible input thresholds |
| I/O0–I/O7 | Byte Low Data I/O | 8-bit bidirectional data path enabled only when BLE = LOW; high-impedance when deselected or during write |
| I/O8–I/O15 | Byte High Data I/O | 8-bit bidirectional data path enabled only when BHE = LOW; isolated from I/O0–I/O7 for independent byte writes |
| CE | Chip Enable | Active-LOW global select; forces device into standby (ISB ≤5 µA) when HIGH and disables all outputs |
| OE | Output Enable | Active-LOW read control; output drivers disabled (high-Z) when HIGH, regardless of CE state |
| WE | Write Enable | Active-LOW write strobe; initiates write cycle when CE and WE both LOW; latches data on falling edge |
| BHE | Byte High Enable | Active-LOW control for upper byte (I/O8–I/O15); must be LOW for high-byte write or read operations |
| BLE | Byte Low Enable | Active-LOW control for lower byte (I/O0–I/O7); must be LOW for low-byte write or read operations |
| VCC | Power Supply | Primary 2.2–3.6 V supply; two dedicated pins (pins 31, 32) reduce IR drop and improve noise immunity |
| VSS | Ground | Signal and power ground reference; two dedicated pins (pins 35, 36) support low-inductance return paths |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | 1.6 mA typical active current at 1 MHz and 45 ns speed enables >10-year battery life in always-on telematics modules |
| Byte-Level Power Control | Independent BHE/BLE inputs allow selective disabling of upper/lower 8-bit data paths to cut dynamic power by up to 50% |
| Automatic Standby Entry | Device enters sub-5 µA ISB2 mode automatically when CE HIGH or both BHE/BLE HIGH-no software intervention required |
| Pin Compatibility | Direct replacement for CY62137CV/CV25/CV30/CV33, CY62137V, and CY62137EV30-enables drop-in upgrade in legacy designs |
| Automotive Qualification | AEC-Q100 qualified for Automotive-A grade; validated for 1000-hour HTOL, ESD ≥2001 V, and latch-up immunity >200 mA |
Applications
| Engine Control Unit (ECU) | Advanced Driver Assistance Systems (ADAS) |
|---|---|
|
Use Scenario: Real-time calibration parameter storage and sensor fusion buffer in gasoline/diesel ECU platforms. IC Role / Device Role / Timing Role: Asynchronous SRAM providing zero-wait-state data exchange between MCU core and CAN/FlexRay peripherals. Use Value: 45 ns access time ensures deterministic response to crankshaft position interrupts; 1.5 V data retention supports fail-safe limp-home mode during voltage sag. |
Use Scenario: Frame buffering for surround-view camera processing in 360° vision systems. IC Role / Device Role / Timing Role: Dual-port-capable SRAM serving as temporary pixel store between image sensor interface and SoC video pipeline. Use Value: Byte-enable isolation prevents corruption during partial-frame updates; TSOP II package enables compact placement near MIPI CSI-2 receivers. |
| Infotainment Head Unit | Body Control Module (BCM) |
|
Use Scenario: Audio codec buffer and UI state cache in automotive infotainment head units with Android Automotive OS. IC Role / Device Role / Timing Role: High-speed parallel memory interfaced directly to ARM Cortex-A53 application processor's SDRAM controller in SRAM mode. Use Value: 2.2–3.6 V operation eliminates need for auxiliary LDO; 1 µA standby current extends battery runtime during key-off monitoring. |
Use Scenario: Secure boot configuration storage and LIN bus message queue in centralized body control modules. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM holding cryptographic keys and door-lock actuation history across ignition cycles. Use Value: Data retention at 1.5 V enables reliable logging during 12 V battery discharge events; AEC-Q100 compliance ensures field reliability over 15-year vehicle lifespan. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS62WV12816BLL-45NLI | 45 ns access, 2.5 V–3.6 V supply, –40 °C to +85 °C, but lacks byte-enable power-down and has 10 µA max ISB | No BHE/BLE-controlled byte isolation; unsuitable for partial-write energy optimization in low-power domains | Select when cost sensitivity outweighs ultra-low standby needs and pin compatibility with CY62137FV30 is not required |
| AS6C1008-55PCN | 55 ns access, 2.7 V–3.6 V supply, –40 °C to +85 °C, no automotive qualification or data retention spec below 2.0 V | Not AEC-Q100 qualified; lacks 1.5 V data retention and fails HTOL/ESD validation for under-hood use | Acceptable only for non-safety-critical cabin applications where qualification overhead is unnecessary |
Compared with IS62WV12816BLL-45NLI and AS6C1008-55PCN, the CY62137FV30LL-55ZSXET uniquely combines automotive qualification, 1.5 V data retention, and hardware-enforced byte-level power gating-making it the sole choice for ISO 26262 ASIL-B–aligned memory subsystems requiring guaranteed low-power behavior.
Availability
CY62137FV30LL-55ZSXET is available at Aetrix Electronics and suitable for engine control units, ADAS domain controllers, and infotainment head units requiring stable component supply across extended automotive production lifecycles.
Supply support for CY62137FV30LL-55ZSXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for automotive, industrial, and IoT applications, with headquarters in San Jose, CA.
This device belongs to the MoBL® Automotive SRAM product line, engineered specifically for battery-sensitive automotive subsystems requiring guaranteed data integrity and ultra-low quiescent power across temperature extremes.
FAQ
Is CY62137FV30LL-55ZSXET pin-compatible with CY62137CV33?
Yes, it is fully pin-compatible with CY62137CV/CV25/CV30/CV33, CY62137V, and CY62137EV30. All share identical 44-pin TSOP II footprint, address/data pin mapping, and control signal assignments (CE, OE, WE, BHE, BLE), enabling direct PCB-level replacement without layout changes.
What is the maximum clock frequency supported for burst reads?
This is an asynchronous SRAM with no internal clock; read/write timing is governed by external signal edges. Maximum effective throughput is determined by tRC = 45 ns, yielding up to ~22.2 million random accesses per second. Burst transfers rely on external controller timing margins-not internal clocking.
Does CY62137FV30LL-55ZSXET support partial writes without affecting adjacent bytes?
Yes. When only BLE is LOW (BHE HIGH), only I/O0–I/O7 are written; when only BHE is LOW (BLE HIGH), only I/O8–I/O15 are written. This enables true byte-selective writes without disturbing the complementary byte, critical for mixed-data-type buffers in ECUs.
Can this SRAM retain data during cold-cranking when VCC drops to 1.8 V?
No-data retention is guaranteed only down to 1.5 V per specification. At 1.8 V, the device remains fully operational. During cold-cranking events where VCC may dip below 2.2 V but stays above 1.5 V, data is retained; below 1.5 V, retention is not assured and requires external backup circuitry.
CY62137FV30LL-55ZSXET Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 2Mbit
- Memory Organization:
- 128K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY62137FV30LL-55ZSXET FAQ
1.How can I place an order for CY62137FV30LL-55ZSXET through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62137FV30LL-55ZSXET on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62137FV30LL-55ZSXET reliable?
The price and inventory of CY62137FV30LL-55ZSXET are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62137FV30LL-55ZSXET is usually 5 days.
3.What payment methods are accepted for CY62137FV30LL-55ZSXET?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62137FV30LL-55ZSXET transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62137FV30LL-55ZSXET?
CY62137FV30LL-55ZSXET orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62137FV30LL-55ZSXET order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62137FV30LL-55ZSXET?
For technical support, including CY62137FV30LL-55ZSXET datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62137FV30LL-55ZSXET requirements.
6.How does Aetrix verify that CY62137FV30LL-55ZSXET is sourced from the original manufacturer or authorized distributors?
All CY62137FV30LL-55ZSXET products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62137FV30LL-55ZSXET meets industry standards.
7.What is the process for return or replacement of CY62137FV30LL-55ZSXET?
All CY62137FV30LL-55ZSXET units undergo pre-shipment inspection (PSI). If there is an issue with CY62137FV30LL-55ZSXET, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62137FV30LL-55ZSXET part is unused and in its original packaging.
Return procedure for CY62137FV30LL-55ZSXET:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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