Infineon Technologies CY62137FV30LL-55ZSXET

Overview

CY62137FV30LL-55ZSXET from Cypress Semiconductor is a 2-Mbit (128 K × 16) automotive-grade CMOS static RAM with 45 ns access time (Automotive-A grade), 2.2 V–3.6 V supply range, –40 °C to +85 °C operating temperature, and ultra-low standby current (1 µA typical). It supports byte-level power-down via BHE/ BLE controls and is used in engine control units and ADAS domain controllers requiring nonvolatile data retention during low-power states.

For engineers reviewing the CY62137FV30LL-55ZSXET datasheet, CY62137FV30LL-55ZSXET pinout, CY62137FV30LL-55ZSXET application, or CY62137FV30LL-55ZSXET equivalent, this page delivers verified timing parameters, TSOP II package mapping, automotive qualification details, and functional substitution guidance for memory subsystem design.

Technical Context

The CY62137FV30LL-55ZSXET implements a 128K × 16 asynchronous SRAM array with dual-byte enable (BHE/BLE) architecture enabling independent 8-bit writes. Its automatic power-down logic activates when CE is HIGH or both BHE and BLE are HIGH, reducing ICC to ≤5 µA.

It uses CMOS process technology optimized for MoBL® (More Battery Life™), delivering 1.6 mA typical active current at 1 MHz and supporting data retention down to 1.5 V. The device complies with Automotive-A temperature grading (–40 °C to +85 °C) and meets AEC-Q100 stress test requirements per Cypress documentation.

Key Specifications

Pinout & Package

44-pin Thin Small Outline Package (TSOP II), 400 mil width, JEDEC MO-143AC compliant. Pin 1 index marked by notch or dot; pins 1–22 on top row, 23–44 on bottom row.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Compared with IS62WV12816BLL-45NLI and AS6C1008-55PCN, the CY62137FV30LL-55ZSXET uniquely combines automotive qualification, 1.5 V data retention, and hardware-enforced byte-level power gating-making it the sole choice for ISO 26262 ASIL-B–aligned memory subsystems requiring guaranteed low-power behavior.

Availability

CY62137FV30LL-55ZSXET is available at Aetrix Electronics and suitable for engine control units, ADAS domain controllers, and infotainment head units requiring stable component supply across extended automotive production lifecycles.

Supply support for CY62137FV30LL-55ZSXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for automotive, industrial, and IoT applications, with headquarters in San Jose, CA.

This device belongs to the MoBL® Automotive SRAM product line, engineered specifically for battery-sensitive automotive subsystems requiring guaranteed data integrity and ultra-low quiescent power across temperature extremes.

FAQ

Is CY62137FV30LL-55ZSXET pin-compatible with CY62137CV33?

Yes, it is fully pin-compatible with CY62137CV/CV25/CV30/CV33, CY62137V, and CY62137EV30. All share identical 44-pin TSOP II footprint, address/data pin mapping, and control signal assignments (CE, OE, WE, BHE, BLE), enabling direct PCB-level replacement without layout changes.

What is the maximum clock frequency supported for burst reads?

This is an asynchronous SRAM with no internal clock; read/write timing is governed by external signal edges. Maximum effective throughput is determined by tRC = 45 ns, yielding up to ~22.2 million random accesses per second. Burst transfers rely on external controller timing margins-not internal clocking.

Does CY62137FV30LL-55ZSXET support partial writes without affecting adjacent bytes?

Yes. When only BLE is LOW (BHE HIGH), only I/O0–I/O7 are written; when only BHE is LOW (BLE HIGH), only I/O8–I/O15 are written. This enables true byte-selective writes without disturbing the complementary byte, critical for mixed-data-type buffers in ECUs.

Can this SRAM retain data during cold-cranking when VCC drops to 1.8 V?

No-data retention is guaranteed only down to 1.5 V per specification. At 1.8 V, the device remains fully operational. During cold-cranking events where VCC may dip below 2.2 V but stays above 1.5 V, data is retained; below 1.5 V, retention is not assured and requires external backup circuitry.