Infineon Technologies CY62137VLL-70ZSXE
- Part No.:
- CY62137VLL-70ZSXE
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY62137VLL-70ZSXE.pdf
- Description:
- IC SRAM 2MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:

- Shipping:

Inventory:3,116
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Product details
Overview
CY62137VLL-70ZSXE from Cypress Semiconductor is a 2-Mbit (128K × 16) CMOS static RAM with 55 ns/70 ns access time, operating across 2.7–3.6 V and supporting industrial (–40°C to +85°C) and automotive (–40°C to +125°C) temperature ranges. It features byte-level write control via BHE/BLE, automatic CE-driven power-down reducing standby current to 1 µA, and TTL-compatible I/O for seamless integration into memory subsystems of portable telecom and embedded controllers.
For engineers reviewing the CY62137VLL-70ZSXE datasheet, CY62137VLL-70ZSXE pinout, CY62137VLL-70ZSXE application, or CY62137VLL-70ZSXE equivalent, key selection criteria include its 128K × 16 organization, dual-byte enable architecture, ultra-low ISB2 (1 µA typ.), TSOP II 44-pin package compatibility, and MoBL® low-power design for battery-critical systems.
Technical Context
The CY62137VLL-70ZSXE implements a fully static 128K × 16 RAM array with independent high- and low-byte write enables (BHE/BLE), enabling partial-word writes without read-modify-write cycles. Its CMOS core delivers 55 ns read cycle time (tRC) and supports three power states: active (ICC = 7 mA typ. at 3.6 V), automatic CE-triggered power-down (ISB2 = 1 µA typ.), and data retention mode (ICCDR = 0.5 µA at VCC = 1.0 V).
Address decoding uses A0–A16 (17-bit), driving row/column logic to access 128K words; I/O0–I/O15 are bidirectional, tri-stated during deselect (CE HIGH), OE HIGH, or write (WE LOW). The device complies with TTL voltage thresholds (VIH = 2.2 V min., VOL = 0.4 V max.) and exhibits 6 pF input / 8 pF output capacitance for stable high-speed bus interfacing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 2 Mbit (128K × 16) - supports 16-bit data bus architectures without external multiplexing |
| Access Time | 70 ns - guarantees maximum tRC and tAA timing for reliable operation in 14 MHz bus systems |
| Voltage Range | 2.7 V – 3.6 V - compatible with single-supply 3.3 V systems and brown-out tolerant down to 2.7 V |
| Standby Current | 1 µA typ. (ISB2) - enables multi-year battery life in always-on memory retention applications |
| Operating Temp | –40°C to +125°C - qualified for under-hood automotive ECUs and industrial edge controllers |
| Package | 44-pin TSOP II (Forward) - surface-mount footprint with 0.8 mm pitch, JEDEC MO-141 compliant |
| Data Retention | VDR = 1.0 V - maintains stored data at ultra-low voltage, critical for backup power failover designs |
Pinout & Package
Package: 44-pin Thin Small Outline Package Type II (TSOP II), forward pinout, 0.8 mm pitch, RoHS-compliant lead-free finish (ZSXE suffix).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Input | 17-bit address bus for accessing all 128K locations; no internal latching required |
| I/O0–I/O7 | Data I/O (Low Byte) | Bi-directional 8-bit data path enabled when BLE = LOW during read/write |
| I/O8–I/O15 | Data I/O (High Byte) | Bi-directional 8-bit data path enabled when BHE = LOW during read/write |
| CE | Chip Enable | Active-LOW chip select; drives automatic power-down when HIGH and inputs stable |
| OE | Output Enable | Active-LOW control for output driver enable; tri-states I/O when HIGH |
| WE | Write Enable | Active-LOW signal initiating write cycle; overlaps with CE LOW to define write window |
| BHE / BLE | Byte High/Low Enable | Independent active-LOW controls for selective high- or low-byte write/read operations |
| VCC / VSS | Power / Ground | Dual VCC (pins 11, 33) and dual VSS (pins 12, 34) reduce IR drop and improve noise immunity |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power | 1 µA typical standby current (ISB2) extends battery runtime in portable devices beyond 5 years |
| Byte-Selectable Write | Independent BHE/BLE pins eliminate need for external byte masking logic in 16-bit microcontroller interfaces |
| Automatic Power-Down | Reduces ICC by >99% when CE is HIGH and address lines are static-no software intervention required |
| TTL-Compatible I/O | VIH = 2.2 V min., VOL = 0.4 V max. ensures direct connection to legacy 3.3 V or 5 V logic without level shifters |
| Data Retention at 1.0 V | Maintains valid memory contents during brown-out or backup battery operation down to VCC = 1.0 V |
Applications
| Cellular Baseband Processors | Automotive Body Control Modules |
|---|---|
Use Scenario: On-chip SRAM supplement for DSP-based voice encoding/decoding in 2G/3G handsets requiring low-latency buffer storage. IC Role / Device Role / Timing Role: External 16-bit synchronous data buffer with 70 ns tRC, directly mapped to ARM9 or TI C55x EMIF bus. Use Value: MoBL® 1 µA ISB2 enables 30-day standby with retained call history and contact list during deep sleep modes. | Use Scenario: Non-volatile configuration storage and real-time sensor log buffering in door module ECUs exposed to under-dash thermal stress. IC Role / Device Role / Timing Role: Dual-voltage (2.7–3.6 V) SRAM supporting CAN/LIN interface firmware overlays and EEPROM wear-leveling buffers. Use Value: –40°C to +125°C qualification and 1.0 V data retention ensure uninterrupted logging during engine start-up voltage sag. |
| Industrial PLC I/O Expansion Cards | Medical Patient Monitor Data Buffers |
Use Scenario: Local scratchpad memory for FPGA-based digital I/O conditioning logic in modular automation controllers. IC Role / Device Role / Timing Role: 128K × 16 word-wide memory mapped to Xilinx Spartan-6 AXI HP slave port with byte-enable granularity. Use Value: BHE/BLE support allows concurrent status register updates and analog channel FIFO management without bus contention. | Use Scenario: Real-time waveform capture buffer feeding ADC streams from ECG/SpO₂ sensors before compression and wireless transmission. IC Role / Device Role / Timing Role: Low-noise, low-power SRAM interfaced to AD7606C-18 parallel bus with 70 ns tDOE ensuring sub-µs sampling-to-buffer latency. Use Value: 6 pF CIN / 8 pF COUT minimizes signal integrity degradation on 16-bit medical-grade analog front-end buses. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV12816BLL-70NLI | Same 128K × 16 organization, 70 ns speed, but uses 3.0–3.6 V range only; ISB2 = 2 µA typ. | Lacks automotive temp grade (–40°C to +85°C only); no 1.0 V data retention mode. | Select for cost-sensitive industrial designs where extended temperature and ultra-low VDR are not required. |
| Renesas R1LV0216ES-70SI | Identical 2.7–3.6 V range and –40°C to +125°C rating, but ISB2 = 5 µA typ.; no BHE/BLE-uses UB/LB pins with different timing. | Requires PCB layout revision due to inverted byte-enable polarity and higher standby draw. | Choose only if existing Renesas platform design mandates pin-for-pin compatibility with R1LV family. |
Compared with IS62WV12816BLL-70NLI and R1LV0216ES-70SI, the CY62137VLL-70ZSXE uniquely combines automotive qualification, 1.0 V data retention, and 1 µA ISB2-making it optimal for safety-critical, battery-backed, and thermally demanding embedded memory applications.
Availability
CY62137VLL-70ZSXE is available at Aetrix Electronics and suitable for cellular baseband processors, automotive body control modules, and industrial PLC I/O expansion cards requiring stable component supply across extended temperature and low-power constraints.
Supply support for CY62137VLL-70ZSXE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, PSoC programmable system-on-chip, and USB/USB-C solutions.
The CY62137V series belongs to Cypress's MoBL® (More Battery Life) SRAM product line, engineered specifically for portable and energy-constrained applications where ultra-low standby current and fast wake-up from power-down are mandatory.
FAQ
What is the minimum VCC required to retain data in CY62137VLL-70ZSXE?
The device guarantees data retention down to VCC = 1.0 V (VDR parameter), with ICCDR = 0.5 µA typical at that voltage under industrial conditions. This enables use with coin-cell backup or supercapacitor hold-up circuits during main supply failure.
Can CY62137VLL-70ZSXE operate reliably at 2.7 V with 70 ns timing?
Yes-electrical characteristics tables confirm tRC = 70 ns max. and all AC/DC parameters (VOH, VOL, tAA, tDOE) are fully specified across the entire 2.7–3.6 V range, including worst-case industrial temperature conditions.
How does automatic power-down activate, and what triggers exit?
Automatic power-down activates when CE is HIGH and all address inputs remain static for >100 ns (per internal timer). Exit occurs on first address transition or CE LOW assertion, with tPD = 70 ns max. and tPU = 0 ns-ensuring immediate data access upon reselection.
Is the TSOP II package of CY62137VLL-70ZSXE compatible with standard reflow profiles?
Yes-the ZSXE suffix denotes lead-free (Pb-free) construction qualified for IPC/JEDEC J-STD-020D-compliant reflow, with peak temperature ≤260°C and ΘJA = 60°C/W on a 2-layer PCB, enabling compatibility with standard SMT assembly lines.
CY62137VLL-70ZSXE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 2Mbit
- Memory Organization:
- 128K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY62137VLL-70ZSXE FAQ
1.How can I place an order for CY62137VLL-70ZSXE through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62137VLL-70ZSXE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62137VLL-70ZSXE reliable?
The price and inventory of CY62137VLL-70ZSXE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62137VLL-70ZSXE is usually 5 days.
3.What payment methods are accepted for CY62137VLL-70ZSXE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62137VLL-70ZSXE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62137VLL-70ZSXE?
CY62137VLL-70ZSXE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62137VLL-70ZSXE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62137VLL-70ZSXE?
For technical support, including CY62137VLL-70ZSXE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62137VLL-70ZSXE requirements.
6.How does Aetrix verify that CY62137VLL-70ZSXE is sourced from the original manufacturer or authorized distributors?
All CY62137VLL-70ZSXE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62137VLL-70ZSXE meets industry standards.
7.What is the process for return or replacement of CY62137VLL-70ZSXE?
All CY62137VLL-70ZSXE units undergo pre-shipment inspection (PSI). If there is an issue with CY62137VLL-70ZSXE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62137VLL-70ZSXE part is unused and in its original packaging.
Return procedure for CY62137VLL-70ZSXE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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