Infineon Technologies CY62137VNLL-70ZSXET
- Part No.:
- CY62137VNLL-70ZSXET
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY62137VNLL-70ZSXET.pdf
- Description:
- IC SRAM 2MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY62137VNLL-70ZSXET from Cypress Semiconductor is a 2-Mbit (128K × 16) CMOS static RAM with 55 ns access time, operating across 2.7V–3.6V supply, featuring automatic CE-driven power-down (ISB2 = 1 µA typ.), TTL-compatible I/O, and byte-level write control via BHE/ BLE. It serves as main data buffer in portable telecom systems requiring low-power, fast-access memory.
For engineers reviewing the CY62137VNLL-70ZSXET datasheet, CY62137VNLL-70ZSXET pinout, CY62137VNLL-70ZSXET application, or CY62137VNLL-70ZSXET equivalent, key selection criteria include industrial/automotive temperature grade support, TSOP II package compatibility, MoBL® ultra-low standby current, and dual-byte write enable timing alignment with address/data bus architectures.
Technical Context
The CY62137VNLL-70ZSXET implements a full CMOS 128K × 16 SRAM array with independent high- and low-byte write enables (BHE/BLE), enabling partial-word writes without read-modify-write cycles. Its automatic power-down activates when CE is HIGH or when CE is LOW but both BHE and BLE are HIGH, reducing ICC to ≤1 µA at VCC = 3.6V.
Timing is defined by strict AC parameters including tRC = 70 ns max, tACE = 70 ns max, and tHZOE = 25 ns - all guaranteed over –40°C to +125°C (Automotive-E grade). Input/output pins enter high-impedance state under four conditions: CE HIGH, OE HIGH, BHE/BLE HIGH, or during active write (CE LOW & WE LOW).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 128K words × 16 bits - supports 16-bit data bus interface without external multiplexing |
| Access Time (tRC) | 70 ns max - ensures compatibility with 14.3 MHz synchronous bus clocks |
| VCC Range | 2.7V–3.6V - matches Li-ion battery discharge profile and 3.3V system rails |
| Standby Current (ISB2) | 1 µA typ. at 3.6V - enables multi-year battery life in always-on memory retention mode |
| Operating Temperature | –40°C to +125°C - qualified for under-hood automotive electronics per AEC-Q100 |
| Package | 44-pin TSOP Type II (forward) - surface-mount compatible with standard reflow profiles |
| I/O Voltage Compatibility | TTL-compatible inputs/outputs - interoperable with legacy 5V-tolerant logic without level shifters |
Pinout & Package
Package: 44-pin TSOP Type II (forward), 0.8 mm pitch, JEDEC MO-141AC compliant, Pb-free termination.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A16 | Address Inputs | 17-bit address bus supporting full 128K-word addressing; no internal latching |
| I/O0–I/O7 | Data I/O (Low Byte) | Bi-directional 8-bit data path controlled by BLE; tri-stated when BLE HIGH or CE/OE HIGH |
| I/O8–I/O15 | Data I/O (High Byte) | Bi-directional 8-bit data path controlled by BHE; independent of low-byte operation |
| CE | Chip Enable | Active-LOW chip select; initiates automatic power-down when HIGH |
| WE | Write Enable | Active-LOW write strobe; combined with CE LOW to initiate write cycle |
| OE | Output Enable | Active-LOW output driver control; disables outputs (high-Z) when HIGH |
| BHE, BLE | Byte Write Enables | Active-LOW controls for high/low byte writes; enables partial-word updates |
| VCC, VSS | Power Supply | Dual VCC (pins 11, 33) and dual VSS (pins 12, 34) reduce IR drop and noise coupling |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power | 1 µA typical standby current (ISB2) at 3.6V enables >10-year battery-backed data retention |
| Dual-Byte Write Architecture | Independent BHE/BLE pins allow simultaneous or selective 8-bit writes - eliminates RMW overhead |
| Automatic Power-Down | Hardware-triggered entry into sub-µA retention mode on CE deassertion or byte-enable disable |
| Wide Voltage Operation | 2.7V–3.6V range supports direct connection to single-cell Li-ion batteries (2.8–3.6V discharge curve) |
| TSOP II Pinout Compatibility | Standard 44-pin footprint allows drop-in replacement of legacy 2-Mbit SRAMs in space-constrained PCBs |
Applications
| Cellular Baseband Processing | Automotive ADAS Sensor Buffer |
|---|---|
Use Scenario: Stores real-time voice codec coefficients and frame buffers in GSM/UMTS handsets during active call mode. IC Role / Device Role / Timing Role: Primary working memory for baseband DSP, interfaced directly to 16-bit parallel bus with 70 ns timing margin. Use Value: MoBL® low active current (7 mA typ.) extends talk time; byte-write capability reduces bus arbitration latency by 40% vs. full-word writes. | Use Scenario: Buffers raw pixel data from radar or camera sensors before preprocessing in Tier-1 ADAS ECUs. IC Role / Device Role / Timing Role: High-speed, temperature-hardened SRAM acting as first-stage FIFO between sensor interface and SoC DMA engine. Use Value: Automotive-E grade (–40°C to +125°C) and 1 µA ISB2 ensure reliable operation in engine bay environments with zero refresh overhead. |
| Industrial PLC Data Logging | Medical Portable Monitor Memory |
Use Scenario: Holds timestamped analog input samples and alarm history in DIN-rail mounted programmable logic controllers. IC Role / Device Role / Timing Role: Non-volatile shadow RAM backed by supercapacitor; retains data during 200 ms brown-out events. Use Value: Data retention at VDR = 1.0V enables >10-second hold-up time; dual VCC/VSS pins suppress noise-induced bit flips in EMI-heavy factory floors. | Use Scenario: Stores waveform buffers and patient parameter histories in battery-powered ECG/SpO₂ monitors used in field triage. IC Role / Device Role / Timing Role: Low-power SRAM co-located with microcontroller for real-time display rendering and local data caching. Use Value: 2.7V minimum VCC allows operation down to end-of-life battery voltage; 55 ns access supports 120 Hz waveform update rate without frame drop. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV12816BLL-70NLI | Same 128K × 16 organization, 70 ns speed, but only rated –40°C to +85°C (industrial); ISB2 = 2 µA typ. | Lacks Automotive-E qualification; unsuitable for under-hood deployment | Select when cost sensitivity outweighs extended temperature need and board space permits alternate footprint. |
| Renesas R1LV0216ESG-70SI | 70 ns access, 2.7V–3.6V, but uses 48-pin TSOP I package; ISB2 = 5 µA typ. at 3.6V | Different pinout prevents direct PCB replacement; higher standby current impacts battery life | Choose only if existing design already uses TSOP I layout and thermal derating margins accommodate +4 µA ISB2 delta. |
Compared with IS62WV12816BLL-70NLI and R1LV0216ESG-70SI, CY62137VNLL-70ZSXET uniquely delivers automotive-grade reliability in a pin-compatible TSOP II package with the lowest verified standby current (1 µA), making it optimal for safety-critical, battery-limited embedded systems where thermal robustness and energy efficiency are jointly constrained.
Availability
CY62137VNLL-70ZSXET is available at Aetrix Electronics and suitable for cellular handset design, automotive ADAS modules, industrial PLC data logging, and portable medical monitor development requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for CY62137VNLL-70ZSXET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for automotive, industrial, and consumer electronics, with emphasis on low-power innovation and automotive qualification.
The CY62137VN series belongs to Cypress's MoBL® (More Battery Life) SRAM product line, engineered specifically for portable and battery-sensitive applications demanding sub-microamp standby current without sacrificing speed or interface simplicity.
FAQ
What is the maximum clock frequency supported by CY62137VNLL-70ZSXET?
The device does not use a clock signal - it is an asynchronous SRAM. Its maximum operational speed is defined by access time: tRC = 70 ns max implies reliable operation up to 14.3 MHz effective bus bandwidth when interfaced with appropriate address/data setup/hold timing. No internal oscillator or clock input exists.
Does CY62137VNLL-70ZSXET require external refresh circuitry?
No. As a static RAM, CY62137VNLL-70ZSXET retains data indefinitely as long as power is applied and CE remains LOW during active use. Unlike DRAM, it contains no capacitive storage cells and therefore needs no refresh cycles, simplifying controller design and eliminating refresh-related power spikes.
Can BHE and BLE be asserted simultaneously for full 16-bit writes?
Yes. Asserting both BHE and BLE LOW enables concurrent writing to I/O8–I/O15 and I/O0–I/O7, performing a full 16-bit write in one cycle. The truth table confirms this mode is fully supported and electrically identical to separate byte writes - no timing penalty or functional restriction applies.
Is the NC pin (Pin 23) required to be tied to ground or left floating?
Pin 23 is a true no-connect (NC) - internally unconnected to the die. Cypress documentation explicitly states it must be left floating (not grounded or pulled). Connecting it may cause mechanical stress or unintended coupling; leaving it unconnected ensures compliance with JEDEC TSOP II mechanical and electrical specifications.
CY62137VNLL-70ZSXET Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 2Mbit
- Memory Organization:
- 128K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 70ns
- Access Time:
- 70 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY62137VNLL-70ZSXET FAQ
1.How can I place an order for CY62137VNLL-70ZSXET through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62137VNLL-70ZSXET on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62137VNLL-70ZSXET reliable?
The price and inventory of CY62137VNLL-70ZSXET are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62137VNLL-70ZSXET is usually 5 days.
3.What payment methods are accepted for CY62137VNLL-70ZSXET?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62137VNLL-70ZSXET transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62137VNLL-70ZSXET?
CY62137VNLL-70ZSXET orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62137VNLL-70ZSXET order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62137VNLL-70ZSXET?
For technical support, including CY62137VNLL-70ZSXET datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62137VNLL-70ZSXET requirements.
6.How does Aetrix verify that CY62137VNLL-70ZSXET is sourced from the original manufacturer or authorized distributors?
All CY62137VNLL-70ZSXET products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62137VNLL-70ZSXET meets industry standards.
7.What is the process for return or replacement of CY62137VNLL-70ZSXET?
All CY62137VNLL-70ZSXET units undergo pre-shipment inspection (PSI). If there is an issue with CY62137VNLL-70ZSXET, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62137VNLL-70ZSXET part is unused and in its original packaging.
Return procedure for CY62137VNLL-70ZSXET:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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