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Infineon Technologies CY62138EV30LL-45BVXI

Part No.:
CY62138EV30LL-45BVXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
36-VFBGA
Datasheet:
AetrixCY62138EV30LL-45BVXI.pdf
Description:
IC SRAM 2MBIT PARALLEL 36VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:940

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Product details

Overview

CY62138EV30LL-45BVXI from Cypress Semiconductor is a 2-Mbit (256 K × 8) CMOS static RAM with 45 ns access time, operating across 2.2 V to 3.6 V supply, featuring ultra-low standby current (1 µA typical), automatic CE-controlled power-down, and Pb-free 36-ball BGA packaging - deployed in battery-constrained portable systems including cellular handsets and handheld medical monitors.

For engineers reviewing the CY62138EV30LL-45BVXI datasheet, CY62138EV30LL-45BVXI pinout, CY62138EV30LL-45BVXI application, or CY62138EV30LL-45BVXI equivalent, key selection criteria include guaranteed 45 ns read cycle time, dual standby current specs (ISB1/ISB2 ≤ 7 µA), VCC range compatibility with Li-ion and regulated 3.3 V rails, and BGA thermal resistance (θJA = 72 °C/W) for compact PCB layout.

Technical Context

This SRAM implements a fully decoded 256K × 8 architecture with complementary metal oxide semiconductor (CMOS) process technology optimized for low-power, high-speed operation. It supports three-state I/Os (I/O0–I/O7), independent CE/OE/WE control logic, and automatic power-down when CE is HIGH - eliminating external power management circuitry.

Read operations require CE and OE LOW with WE HIGH; writes occur when CE and WE are LOW, latching data on address A0–A18. All I/O pins enter high-impedance state during deselect (CE HIGH), output disable (OE HIGH), or write cycles - enabling seamless bus sharing in multi-peripheral embedded systems.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Size256 K × 8 bits = 2 Mbit; supports byte-wide data interface without external demultiplexing
Access Time45 ns max; enables direct interfacing with microcontrollers running at ≤22 MHz bus clock
VCC Range2.2 V to 3.6 V; compatible with single-cell Li-ion (3.0–3.6 V) and regulated 2.5 V/3.3 V rails
Standby Current1 µA typical / 7 µA max at VCC = 3.6 V; extends battery life in sleep-mode portable devices
Active Current2 mA typical at f = 1 MHz; enables low-power continuous polling in sensor buffer applications
Data Retention Voltage1.0 V min; retains memory contents during brown-out or backup-battery operation
Package36-ball FBGA (6 × 6 mm, 0.8 mm pitch); supports high-density routing and thermal dissipation via solder balls

Pinout & Package

Package: 36-ball Fine-Pitch Ball Grid Array (FBGA), 6 mm × 6 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free finish.

Pin/TerminalCircuit RoleDesign Meaning
A0–A18Address Inputs19-bit address bus supporting full 256K-word decoding; no external address latch required
I/O0–I/O7Bidirectional Data Bus8-bit tri-state I/O lines; high-impedance during CE HIGH, OE HIGH, or WE LOW - enables shared bus topology
CEChip EnableActive-LOW enable controlling both memory access and automatic power-down mode (ISB1/ISB2)
OEOutput EnableActive-LOW control for output drivers only; allows read operation while CE remains asserted
WEWrite EnableActive-LOW signal initiating write cycle; timing-critical for tSD (25 ns data setup) and tHD (0 ns hold)
VCCPower SupplyDual VCC balls (pins A1, C1) reduce IR drop and improve noise immunity in high-speed operation
VSSGroundDual VSS balls (pins D1, F1) provide low-inductance return path for switching currents
NCNo ConnectPins A15 and G1 are unconnected on die; must be left floating or tied to ground per board design rules

Key Features

FeatureDesign Value
MoBL® Low-Power ArchitectureReduces active and standby current by >50% vs. legacy 2-Mbit SRAMs - critical for sub-100 µA system sleep budgets
Automatic CE Power-DownEliminates need for external power-gating logic; transitions to ISB2 mode within 45 ns of CE HIGH assertion
Full CMOS CompatibilitySupports mixed-voltage systems with VIH/VIL thresholds scaling across 2.2–3.6 V VCC - no level-shifting required
High-Speed Read TimingtDOE = 22 ns ensures fast data fetch from peripherals like ADC buffers or display FIFOs without wait states
Robust Data RetentionMaintains stored data down to 1.0 V VCC - supports graceful degradation during power loss in safety-critical logging

Applications

Cellular Handset Memory BufferPortable ECG Monitor Data Cache

Use Scenario: Stores real-time voice codec frames and protocol stack buffers in GSM/UMTS handsets during active call and idle modes.

IC Role / Device Role: Byte-accessible, low-latency SRAM acting as primary working memory for baseband processor subsystem.

Use Value: 45 ns access + 1 µA standby enables >200-hour standby time on 800 mAh battery while maintaining instant wake-up responsiveness.

Use Scenario: Captures and temporarily holds 12-bit ECG waveform samples at 250 SPS before Bluetooth transmission or flash storage.

IC Role / Device Role: High-reliability, low-noise data buffer decoupling analog front-end from wireless transceiver timing jitter.

Use Value: Dual VCC/VSS balls minimize supply noise coupling into sensitive analog acquisition path; 1.0 V data retention prevents waveform loss during brief power interruptions.

Industrial PLC I/O Register BankWearable Fitness Tracker Sensor Hub

Use Scenario: Holds digital I/O status registers and configuration tables in DIN-rail mounted programmable logic controllers operating in -40°C to +85°C environments.

IC Role / Device Role: Industrial-grade SRAM providing deterministic read/write timing for cyclic scan-based control execution.

Use Value: Guaranteed 45 ns tRC across full temperature range ensures consistent scan cycle timing; Pb-free BGA withstands reflow and thermal cycling per IPC-J-STD-020.

Use Scenario: Buffers accelerometer, gyroscope, and heart-rate sensor data streams prior to compression and BLE packetization in wrist-worn devices.

IC Role / Device Role: Ultra-low-leakage memory enabling <5 µA system sleep current while preserving motion context between activity bursts.

Use Value: 7 µA max ISB2 meets wearable energy budget constraints; small 6 × 6 mm footprint fits within tight mechanical envelope of curved wristband PCB.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
ISSI IS62WV2568BLL-45NLISame 256K × 8 organization, 45 ns speed, and 2.2–3.6 V VCC; slightly higher ISB2 (10 µA max) and larger 48-ball BGA packageAcceptable where board area permits larger footprint and 3 µA higher standby is tolerableSelect if sourcing flexibility is prioritized over minimal standby current or strict footprint constraints
Renesas R1LV2568ASBG-45PBIdentical 256K × 8, 45 ns, 2.2–3.6 V spec; lower θJA (65 °C/W) but requires 0.5 mm pitch BGA - tighter assembly toleranceSuitable for thermally constrained designs needing better junction-to-ambient dissipationChoose when thermal performance outweighs manufacturing complexity of finer-pitch BGA placement

Compared with IS62WV2568BLL-45NLI and R1LV2568ASBG-45PB, CY62138EV30LL-45BVXI delivers the lowest guaranteed standby current (7 µA max) in the smallest standard 0.8 mm pitch BGA, making it optimal for space- and battery-limited portable designs where thermal margin is adequate.

Availability

CY62138EV30LL-45BVXI is available at Aetrix Electronics and suitable for cellular handset memory buffers, portable medical sensor caches, and industrial PLC I/O register banks requiring stable component supply across extended product lifecycles.

Supply support for CY62138EV30LL-45BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance, low-power memory and programmable solutions for embedded systems, with global R&D and manufacturing infrastructure.

The MoBL® (More Battery Life™) SRAM product line targets portable and energy-sensitive applications, emphasizing ultra-low standby current, wide VCC tolerance, and robust data retention - directly addressing battery runtime and reliability requirements in handheld electronics.

FAQ

What is the minimum VCC required to retain data in CY62138EV30LL-45BVXI?

The device guarantees data retention down to VCC = 1.0 V, as specified in the ICCDR parameter. This allows continued memory integrity during brown-out conditions or when operating from backup batteries, provided CE remains HIGH and inputs are held at valid CMOS levels. No external refresh or backup power circuitry is needed below nominal VCC.

Can CY62138EV30LL-45BVXI operate reliably at 2.2 V with 45 ns timing?

Yes - all AC specifications including tRC = 45 ns max, tAA = 45 ns max, and tDOE = 22 ns max are guaranteed across the full 2.2 V to 3.6 V VCC range and –40°C to +85°C temperature range. The datasheet's "Operating Range" table explicitly confirms 45 ns speed rating at VCC(min) = 2.2 V.

How does the automatic power-down feature behave when CE is HIGH but OE or WE float?

When CE is driven HIGH (≥ VCC – 0.2 V), the device enters ISB2 standby mode regardless of OE or WE state - even if those pins float. Input leakage current remains ≤ ±1 µA, and I/Os stay in high-impedance. However, Cypress recommends tying OE and WE to valid CMOS levels (VCC or GND) to ensure predictable behavior and avoid unintended current paths.

Are the NC pins on CY62138EV30LL-45BVXI required to be grounded or left open?

The NC pins (A15 and G1) are not connected to the die and may be left unconnected on the PCB. Cypress documentation states they are "not connected on the die"; grounding them is unnecessary and may introduce parasitic capacitance or routing congestion. Standard practice is to omit traces or vias to these balls unless board-level EMI mitigation requires otherwise.

CY62138EV30LL-45BVXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
MOBL™
Package/Case:
36-VFBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
2Mbit
Memory Organization:
256K x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
2.2V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
36-VFBGA (6x8)

CY62138EV30LL-45BVXI FAQ

1.How can I place an order for CY62138EV30LL-45BVXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62138EV30LL-45BVXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62138EV30LL-45BVXI reliable?

The price and inventory of CY62138EV30LL-45BVXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62138EV30LL-45BVXI is usually 5 days.

3.What payment methods are accepted for CY62138EV30LL-45BVXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62138EV30LL-45BVXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62138EV30LL-45BVXI?

CY62138EV30LL-45BVXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62138EV30LL-45BVXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62138EV30LL-45BVXI?

For technical support, including CY62138EV30LL-45BVXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62138EV30LL-45BVXI requirements.

6.How does Aetrix verify that CY62138EV30LL-45BVXI is sourced from the original manufacturer or authorized distributors?

All CY62138EV30LL-45BVXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62138EV30LL-45BVXI meets industry standards.

7.What is the process for return or replacement of CY62138EV30LL-45BVXI?

All CY62138EV30LL-45BVXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62138EV30LL-45BVXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62138EV30LL-45BVXI part is unused and in its original packaging.

Return procedure for CY62138EV30LL-45BVXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY62138EV30LL-45BVXI Tags

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