Infineon Technologies CY62138EV30LL-45BVXIT

Overview

CY62138EV30LL-45BVXIT from Cypress Semiconductor is a 2-Mbit (256 K × 8) low-power CMOS static RAM with 45 ns access time, 2.2 V to 3.6 V supply range, and ultra-low standby current (1 µA typical). It operates across –40 °C to +85 °C and uses a 36-ball FBGA package for high-density portable memory applications including cellular handsets and battery-powered IoT edge nodes.

For engineers reviewing the CY62138EV30LL-45BVXIT datasheet, CY62138EV30LL-45BVXIT pinout, CY62138EV30LL-45BVXIT application, or CY62138EV30LL-45BVXIT equivalent, key selection criteria include guaranteed 45 ns read cycle time, automatic CE-controlled power-down mode, MoBL®-optimized active/standby current trade-off, and compatibility with legacy CY62138CV30 designs in space-constrained layouts.

Technical Context

This SRAM implements a synchronous, non-volatile-retentive volatile memory array organized as 256K × 8 bits with fully decoded address inputs (A0–A18), complementary CMOS I/O drivers (I/O0–I/O7), and three-state output control via OE and CE. Its logic block integrates automatic power-down circuitry triggered by CE HIGH, eliminating external sleep controllers.

Read operations require CE and OE LOW with WE HIGH; writes require CE and WE LOW while OE is HIGH or floating. All eight bidirectional data lines enter high-impedance state when CE is HIGH, OE is HIGH, or during write cycles-enabling seamless bus sharing without external isolation.

Key Specifications

Pinout & Package

Package: 36-ball Fine-Pitch Ball Grid Array (FBGA), 6 mm × 8 mm body, 0.8 mm ball pitch, JEDEC MO-245 compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV2568BLL-45NLI and AS6C4008-45TIN, CY62138EV30LL-45BVXIT uniquely delivers 2.2 V operation, 1 µA standby current, and automatic CE-triggered power-down-making it the only option for energy-harvesting and long-life primary-battery systems requiring guaranteed sub-µA quiescent draw.

Availability

CY62138EV30LL-45BVXIT is available at Aetrix Electronics and suitable for cellular modem design, industrial PLC data buffering, and medical wearable sensor caching requiring stable component supply and long-term lifecycle support.

Supply support for CY62138EV30LL-45BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory, PSoC, and USB-C solutions for industrial, automotive, and consumer electronics markets.

The MoBL® (More Battery Life™) SRAM product line targets ultra-low-power portable systems, emphasizing sub-microamp standby current, wide voltage operation, and automatic power-state transitions without firmware overhead.

FAQ

What is the minimum V_CC required to retain data in CY62138EV30LL-45BVXIT?

Data retention is guaranteed down to V_DR = 1.0 V when CE is held HIGH and all inputs are at valid CMOS levels. At this voltage, ICCDR remains ≤3 µA, enabling extended hold time during brown-out conditions. The device does not retain data below 1.0 V, and no internal charge pump or backup capacitor is integrated.

Can CY62138EV30LL-45BVXIT operate reliably at 2.2 V with 45 ns timing?

Yes-the 45 ns access time is specified over the full 2.2 V to 3.6 V V_CC range. Electrical characteristics tables confirm tRC, tAA, and tACE meet 45 ns maximum at V_CC = 2.2 V, TA = –40 °C to +85 °C. No derating is required for timing compliance at minimum supply.

How does the automatic power-down feature interact with OE and WE during standby?

Power-down is triggered solely by CE HIGH; OE and WE states are irrelevant. When CE is HIGH, the core array and I/O drivers enter ultra-low-current mode regardless of OE/WE logic levels. Outputs go high-impedance immediately, and ICC drops to ISB2 (≤7 µA), even if OE or WE float or violate valid input thresholds.

Are the NC pins on CY62138EV30LL-45BVXIT required to be grounded or left floating?

NC pins (A16 and A17) are unconnected on-die and must be left electrically floating-neither grounded nor tied to V_CC. Per Cypress layout guidelines, routing traces to these balls is permitted but they must not be soldered to any net. Doing so may cause unpredictable leakage or latch-up under ESD events.