Infineon Technologies CY62138FV30LL-45BVXIT

Overview

CY62138FV30LL-45BVXIT from Cypress Semiconductor is a 2-Mbit (256 K × 8) CMOS static RAM with 45 ns access time, 2.2 V–3.6 V supply voltage, and ultra-low standby current (1 µA typical). It features dual chip enables (CE1/CE2), automatic power-down on deselect, and operates across –40 °C to +85 °C for industrial and automotive-A applications including portable telecom and battery-powered instrumentation.

For engineers reviewing the CY62138FV30LL-45BVXIT datasheet, CY62138FV30LL-45BVXIT pinout, CY62138FV30LL-45BVXIT application, or CY62138FV30LL-45BVXIT equivalent, key selection criteria include its MoBL® low-power architecture, VFBGA-36 package compatibility, dual CE control logic, and guaranteed 45 ns read/write timing at full industrial temperature range.

Technical Context

The CY62138FV30LL-45BVXIT implements a synchronous, non-volatile-independent SRAM core with complementary metal oxide semiconductor (CMOS) process technology optimized for speed/power trade-off. Its dual chip enable (CE1 LOW + CE2 HIGH = active) enables hierarchical memory expansion without external gating logic.

It supports three operational states: active read/write (CE1=LOW, CE2=HIGH, WE/OE controlled), tri-state output (OE=HIGH or CE inactive), and automatic power-down (CE1=HIGH or CE2=LOW), reducing ICCDR to ≤4 µA at 1.5 V during data retention mode.

Key Specifications

Pinout & Package

Package: 36-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 5 mm × 6 mm, 0.5 mm pitch, RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV2568BLL-45NLI and R1LV256A-45L-JE, the CY62138FV30LL-45BVXIT uniquely delivers guaranteed sub-5 µA standby across full industrial temperature, dual CE scalability, and VFBGA packaging-critical for compact, mission-critical embedded systems.

Availability

CY62138FV30LL-45BVXIT is available at Aetrix Electronics and suitable for portable medical sensors, automotive ADAS logging, and industrial PLC I/O modules requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY62138FV30LL-45BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and microcontroller solutions for industrial, automotive, and computing markets, with headquarters in San Jose, CA.

The CY62138FV30 belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power, high-speed data buffering in battery-constrained portable and automotive electronics.

FAQ

What is the minimum VCC required to retain data in CY62138FV30LL-45BVXIT?

The device guarantees data retention down to 1.5 V VCC, as specified in the Data Retention Characteristics table (page 6 of datasheet 001-08029 Rev. *N). At this voltage, ICCDR remains ≤4 µA across –40 °C to +85 °C, enabling operation during brown-out conditions without external backup capacitors.

Does CY62138FV30LL-45BVXIT require an external clock signal?

No. This is an asynchronous static RAM: all operations are controlled solely by CE1, CE2, WE, and OE edge transitions-no clock input is present or required. Timing is governed by setup/hold relationships between address, control, and data signals as defined in the Switching Characteristics table.

Can NC pins on the VFBGA package be grounded or left floating?

Per datasheet footnote 1 (page 3), NC pins (A16 and A17) are not connected on the die. They must be left electrically floating-neither grounded nor tied to VCC-to avoid parasitic coupling or unintended current paths that could affect thermal resistance or signal integrity.

How does the dual CE architecture simplify memory expansion?

CE1 and CE2 allow hierarchical addressing: for example, using A18 as CE2 select enables two 256 KB banks on one data bus. No external logic is needed-only address line routing-reducing BOM count, PCB layers, and timing skew versus single-CE alternatives requiring discrete decoders.