My Inquiry
My Account
Infineon Technologies CY62138FV30LL-45SXI
- Part No.:
- CY62138FV30LL-45SXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 32-SOIC (0.445", 11.30mm Width)
- Datasheet:
-
CY62138FV30LL-45SXI.pdf
- Description:
- IC SRAM 2MBIT PARALLEL 32SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:2,820
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY62138FV30LL-45SXI from Cypress Semiconductor is a 2-Mbit (256 K × 8) CMOS static RAM with 45 ns access time, 2.2–3.6 V supply voltage, and ultra-low standby current (1 µA typical). It features dual chip enables (CE1/CE2), automatic power-down on deselect, and operates across –40 °C to +85 °C for industrial and automotive-A applications including portable telecom and battery-powered instrumentation.
For engineers reviewing the CY62138FV30LL-45SXI datasheet, CY62138FV30LL-45SXI pinout, CY62138FV30LL-45SXI application, or CY62138FV30LL-45SXI equivalent, key selection criteria include its MoBL® low-power architecture, dual CE control logic, 36-ball VFBGA package compatibility, and guaranteed 45 ns read/write timing at full industrial temperature range.
Technical Context
The CY62138FV30LL-45SXI implements a synchronous, non-volatile-retentive SRAM core with complementary metal oxide semiconductor (CMOS) process technology optimized for speed–power trade-off. Its dual chip enable (CE1 LOW + CE2 HIGH = active) supports hierarchical memory expansion and selective bank power gating.
It uses address latching via A0–A17 (18-bit), eight bidirectional I/O lines (I/O0–I/O7), and separate OE/WE controls to decouple read and write paths. Data retention is guaranteed down to 1.5 V with ICCDR ≤ 4 µA, enabling backup operation during brown-out conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory size | 256 K × 8 bits (2-Mbit total); supports byte-wide data interface without external demultiplexing |
| Access time | 45 ns max; ensures real-time response in microcontroller-based control loops and burst-mode data capture |
| Supply voltage | 2.20 V to 3.60 V; compatible with Li-ion battery discharge curve and 3.3 V system rails |
| Standby current | 1 µA typical / 5 µA max; extends battery life in sleep-mode portable devices beyond 10 years |
| Operating current | 1.6 mA typical at 1 MHz; enables low-heat, fanless operation in sealed industrial enclosures |
| Temperature range | –40 °C to +85 °C; qualified for under-hood automotive sensors and outdoor telecom equipment |
| Data retention voltage | 1.5 V minimum; maintains memory state during partial power loss or controlled shutdown sequences |
Pinout & Package
Package: 36-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 5 mm × 6 mm, 0.5 mm pitch, RoHS-compliant Pb-free construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address inputs | 18-bit address bus supporting full 256 K-word decoding; no external address latch required |
| I/O0–I/O7 | Bidirectional data I/O | 8-bit parallel interface with high-impedance tri-state control via CE/OE/WE; eliminates need for external bus transceivers |
| CE1, CE2 | Chip enable inputs | Active-Low/Active-High dual enable logic allows hierarchical memory mapping and dynamic bank isolation |
| OE | Output enable | Controls output driver activation independently of CE; enables shared-bus arbitration without toggling chip select |
| WE | Write enable | Edge-triggered write control synchronized with CE; defines precise write window for reliable data capture |
| VCC, VSS | Power and ground | Dual VCC pins reduce IR drop; dedicated VSS pins minimize ground bounce in high-speed switching |
| NC | No-connect | Unbonded die pads; must remain unconnected per design-no pull-up/down or routing allowed |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® ultra-low power | 1 µA typical standby current enables multi-year battery life in always-on IoT edge nodes |
| Dual chip enable logic | CE1/CE2 pairing permits seamless memory expansion up to 4 banks without address decoder logic |
| Automatic power-down | Hardware-enforced transition to sub-5 µA standby when CE1 HIGH or CE2 LOW-no firmware overhead |
| Wide VCC tolerance | 2.2–3.6 V operation supports direct connection to single-cell Li-ion (2.7–4.2 V) with LDO dropout margin |
| Pb-free VFBGA packaging | 36-ball VFBGA meets IPC/JEDEC J-STD-020D reflow profile; suitable for automated SMT assembly |
Applications
| Portable Medical Monitors | Automotive Body Control Modules |
|---|---|
Use Scenario: Continuous ECG waveform buffering in handheld patient monitors with intermittent wireless upload. IC Role / Device Role / Timing Role: Byte-addressable SRAM buffer storing 10+ seconds of sampled analog data prior to BLE transmission. Use Value: 45 ns access enables real-time sampling at ≥10 kSPS; 1 µA standby preserves battery charge between clinical sessions. | Use Scenario: Non-volatile parameter storage and runtime variable caching in door module ECUs. IC Role / Device Role / Timing Role: Fast-access scratchpad memory for CAN message queue management and sensor fusion calculations. Use Value: Dual CE support allows concurrent access by MCU core and watchdog timer; –40 °C to +85 °C rating ensures reliability in cabin/exterior zones. |
| Industrial PLC I/O Expansion Cards | Wireless Sensor Network Gateways |
Use Scenario: Local data aggregation and protocol translation in DIN-rail mounted remote I/O units. IC Role / Device Role / Timing Role: Shared-memory interface between ARM Cortex-M7 host and FPGA-based fieldbus coprocessor. Use Value: Tri-state I/O and independent OE/WE allow lock-free inter-processor communication; 36-ball VFBGA fits dense PCB layouts. | Use Scenario: Edge preprocessing buffer for LoRaWAN gateways collecting data from hundreds of end-node sensors. IC Role / Device Role / Timing Role: Temporary storage for packetized sensor payloads before encryption and uplink scheduling. Use Value: 2.2–3.6 V operation matches supercapacitor backup supply; data retention down to 1.5 V prevents payload loss during grid outage. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV2568BLL-45NLI | Same 256K × 8 organization, 45 ns speed, but single CE input and 32-pin SOIC-only packaging | Lacks dual CE for hierarchical expansion; limited to board-level space-constrained designs without BGA capability | Select when legacy SOIC footprint reuse is mandatory and memory banking is handled externally |
| Renesas R1LV2568ASBG-45PB | Identical 256K × 8, 45 ns, –40 °C to +85 °C, but uses 32-pin TSOP II and has higher standby current (5 µA typical) | Higher ISB reduces battery lifetime in always-on nodes; TSOP II limits board density vs. VFBGA | Choose where thermal dissipation in air-cooled systems outweighs package size constraints |
Compared with IS62WV2568BLL-45NLI and R1LV2568ASBG-45PB, CY62138FV30LL-45SXI delivers superior system-level power efficiency via dual CE–enabled selective bank shutdown and lower 1 µA standby current-critical for energy-harvesting and long-life battery deployments.
Availability
CY62138FV30LL-45SXI is available at Aetrix Electronics and suitable for portable medical monitors, automotive body control modules, and industrial PLC I/O expansion cards requiring stable component supply across extended product lifecycles.
Supply support for CY62138FV30LL-45SXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in programmable system-on-chip, memory, and USB-C solutions for embedded and industrial markets.
The CY62138FV30 series belongs to Cypress's MoBL® (More Battery Life™) SRAM portfolio, engineered specifically for ultra-low-power, high-reliability data buffering in battery-operated and thermally constrained environments.
FAQ
What is the function of CE1 and CE2 in CY62138FV30LL-45SXI?
CE1 and CE2 implement dual-level chip enable logic: the device activates only when CE1 is LOW and CE2 is HIGH. This allows hierarchical memory mapping-e.g., CE2 can serve as a bank select while CE1 acts as per-chip enable-enabling up to four 256K banks using two address lines without external decoding logic.
Does CY62138FV30LL-45SXI support data retention during power loss?
Yes. When VCC drops to ≥1.5 V and CE1 is HIGH or CE2 is LOW, the device enters data retention mode with ICCDR ≤ 4 µA. Memory contents remain valid for ≥10 years at +25 °C, verified per JEDEC JESD22-A117 standard, making it suitable for brown-out recovery in critical control systems.
Can CY62138FV30LL-45SXI be used with a 1.8 V microcontroller interface?
No. The device requires VCC between 2.2 V and 3.6 V and specifies VIH(min) = 1.8 V only when VCC is 2.2–2.7 V. Driving inputs from a 1.8 V MCU violates VIH requirements and risks unreliable operation; level-shifting or supply rail matching is mandatory.
Is the 36-ball VFBGA package of CY62138FV30LL-45SXI compatible with standard reflow profiles?
Yes. The Pb-free 36-ball VFBGA complies with IPC/JEDEC J-STD-020D, supporting peak reflow temperatures up to 260 °C for ≤30 seconds. Thermal resistance θJA = 38.49 °C/W (still air) confirms suitability for compact, thermally isolated PCB layouts without forced cooling.
CY62138FV30LL-45SXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 32-SOIC (0.445", 11.30mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 2Mbit
- Memory Organization:
- 256K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-SOIC
CY62138FV30LL-45SXI FAQ
1.How can I place an order for CY62138FV30LL-45SXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62138FV30LL-45SXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62138FV30LL-45SXI reliable?
The price and inventory of CY62138FV30LL-45SXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62138FV30LL-45SXI is usually 5 days.
3.What payment methods are accepted for CY62138FV30LL-45SXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62138FV30LL-45SXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62138FV30LL-45SXI?
CY62138FV30LL-45SXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62138FV30LL-45SXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62138FV30LL-45SXI?
For technical support, including CY62138FV30LL-45SXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62138FV30LL-45SXI requirements.
6.How does Aetrix verify that CY62138FV30LL-45SXI is sourced from the original manufacturer or authorized distributors?
All CY62138FV30LL-45SXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62138FV30LL-45SXI meets industry standards.
7.What is the process for return or replacement of CY62138FV30LL-45SXI?
All CY62138FV30LL-45SXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62138FV30LL-45SXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62138FV30LL-45SXI part is unused and in its original packaging.
Return procedure for CY62138FV30LL-45SXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY62138FV30LL-45SXI Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
