Infineon Technologies CY62138FV30LL-45SXIT

Overview

CY62138FV30LL-45SXIT from Cypress Semiconductor is a 2-Mbit (256 K × 8) CMOS static RAM with 45 ns access time, 2.2–3.6 V supply voltage, and industrial/automotive-A temperature range (–40 °C to +85 °C). It delivers ultra-low standby current (1 µA typical), supports automatic power-down on chip deselect, and is used in battery-constrained portable systems requiring fast, low-power memory.

For engineers reviewing the CY62138FV30LL-45SXIT datasheet, CY62138FV30LL-45SXIT pinout, CY62138FV30LL-45SXIT application, or CY62138FV30LL-45SXIT equivalent, key selection criteria include access speed vs. standby power trade-off, dual chip enable (CE1/CE2) control logic for hierarchical memory mapping, and compatibility with legacy CY62138CV series designs.

Technical Context

This SRAM implements a synchronous, non-volatile-retentive volatile memory array with complementary metal oxide semiconductor (CMOS) process technology optimized for speed-power balance. Its dual CE architecture enables seamless integration into multi-bank memory subsystems without external gating logic.

Operation relies on strict timing coordination between CE1 (active-low), CE2 (active-high), OE (active-low), and WE (active-low) to define read/write cycles and high-impedance I/O states. Data retention mode activates at VCC ≥ 1.5 V with ICCDR ≤ 4 µA, supporting extended battery-backed operation during sleep.

Key Specifications

Pinout & Package

Package: 36-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 0.5 mm pitch, 6 × 6 mm body size, JEDEC MO-220 compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV2568BLL-45NLI and AS6C4008-45TIN, CY62138FV30LL-45SXIT uniquely combines dual CE control, 1.5 V data retention, and 1 µA standby-making it optimal for hierarchical, battery-limited, and automotive-qualified designs where memory subsystem flexibility and ultra-low leakage are mandatory.

Availability

CY62138FV30LL-45SXIT is available at Aetrix Electronics and suitable for portable medical monitors, automotive infotainment head units, and industrial PLC communication modules requiring stable component supply across extended product lifecycles.

Supply support for CY62138FV30LL-45SXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in programmable system-on-chip (PSoC), memory, and USB solutions for embedded applications.

The MoBL® (More Battery Life™) SRAM product line was designed specifically for ultra-low-power portable electronics, emphasizing sub-µA standby, wide VCC tolerance, and fast access without sacrificing reliability in harsh thermal environments.

FAQ

What is the minimum V_CC required to retain data in CY62138FV30LL-45SXIT?

The device guarantees data retention down to V_CC = 1.5 V, with ICCDR ≤ 4 µA under industrial/automotive-A conditions. Below 1.5 V, data integrity is not assured-even if the part remains powered. This specification enables use in brown-out recovery and deep-sleep scenarios where system voltage drops but memory state must persist.

How does the dual CE (CE1/CE2) architecture improve system design?

CE1 (active-low) and CE2 (active-high) together form a logical AND-enable condition, allowing direct connection to decoded address lines without external NAND gates. This reduces component count, eliminates propagation delay in chip-select paths, and supports clean hierarchical memory banking-for example, using A18/A19 to drive CE2 while lower address bits feed CE1 via decoder outputs.

Can CY62138FV30LL-45SXIT operate reliably at 2.2 V across its full temperature range?

Yes-electrical characteristics including 45 ns access time, 1.6 mA typical ICC at 1 MHz, and 5 µA max ISB2 are fully specified and tested over –40 °C to +85 °C at V_CC = 2.2 V. The device's wide voltage range eliminates need for LDO regulation in direct battery-fed applications.

Is the 36-ball VFBGA package RoHS and REACH compliant?

Yes-the CY62138FV30LL-45SXIT carries "SXIT" suffix indicating Pb-free (RoHS-compliant) 36-ball VFBGA packaging. It meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL-3), and full compliance documentation-including substance declarations and conflict minerals reporting-is available through Infineon's product change notifications (PCNs).