Infineon Technologies CY62138FV30LL-45ZAXI
- Part No.:
- CY62138FV30LL-45ZAXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 32-TFSOP (0.465", 11.80mm Width)
- Datasheet:
-
CY62138FV30LL-45ZAXI.pdf
- Description:
- IC SRAM 2MBIT PARALLEL 32STSOP
- Quantity:
- Payment:

- Shipping:

Inventory:446
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Product details
Overview
CY62138FV30LL-45ZAXI from Cypress Semiconductor is a 2-Mbit (256 K × 8) CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and industrial/automotive-A temperature rating (–40 °C to +85 °C). It delivers ultra-low standby current (1 µA typical), active current of 1.6 mA at 1 MHz, and automatic CE-controlled power-down-enabling battery-sensitive portable applications including cellular handsets and handheld medical devices.
For engineers reviewing the CY62138FV30LL-45ZAXI datasheet, CY62138FV30LL-45ZAXI pinout, CY62138FV30LL-45ZAXI application, or CY62138FV30LL-45ZAXI equivalent, key selection criteria include dual chip enable (CE1/CE2) logic for hierarchical memory mapping, tristate I/O control timing (tLZOE = 5 ns, tHZOE = 18 ns), and Pb-free 36-ball VFBGA package compatibility with high-density portable PCB layouts.
Technical Context
This SRAM implements complementary metal oxide semiconductor (CMOS) architecture optimized for low-power, high-speed random-access storage in space-constrained embedded systems. Its dual chip enable (CE1 LOW + CE2 HIGH for selection) enables seamless memory expansion across multiple banks without external decoding logic.
The device supports three distinct operational modes: active read (CE1/CE2 selected, OE LOW, WE HIGH), active write (CE1/CE2 selected, WE LOW), and automatic power-down (CE1 HIGH or CE2 LOW), with guaranteed data retention down to 1.5 V and ICCDR ≤ 4 µA under retention conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256 K × 8 bits - provides byte-wide data interface compatible with 8-bit microcontrollers and legacy bus architectures |
| Access Time | 45 ns - ensures deterministic read latency for real-time firmware execution and buffer management |
| Supply Voltage Range | 2.20 V to 3.60 V - supports direct interfacing with Li-ion battery rails and multi-rail PMIC outputs |
| Standby Current | 1 µA typical / 5 µA max - extends battery life in sleep-mode portable electronics beyond 10 years |
| Operating Current | 1.6 mA typical at 1 MHz - enables low-noise operation without thermal derating in sealed enclosures |
| Data Retention Voltage | 1.5 V minimum - guarantees nonvolatile data hold during brown-out or backup battery switchover |
| Temperature Range | –40 °C to +85 °C - qualified for industrial control panels and automotive infotainment head units |
Pinout & Package
Package: 36-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 5.0 mm × 6.0 mm × 0.55 mm, Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256 K-word addressing; no internal latching - requires stable address before CE/OE assertion |
| I/O0–I/O7 | Bidirectional Data Bus | CMOS-compatible 8-bit tristate I/O; enters high-Z on CE deselect, OE HIGH, or WE LOW - eliminates bus contention in shared-memory systems |
| CE1, CE2 | Dual Chip Enable Inputs | Active-LOW CE1 and active-HIGH CE2 form AND-gated chip select; enables hierarchical memory banking and partial array disable |
| WE | Write Enable Input | Active-LOW control signal that gates write cycles; must be synchronized with CE and address setup/hold per tSA/tHA timing |
| OE | Output Enable Input | Active-LOW signal enabling output drivers; independent of WE - allows read-modify-write sequences without bus release |
| VCC, VSS | Power Supply Pins | Single 2.2–3.6 V supply with dedicated ground; decoupling required within 3 mm of VFBGA balls per JEDEC MO-220 |
| NC | No Connect | Two unconnected balls (A17, A16) - must remain floating; not bonded to die |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | Reduces system-level quiescent current by >95% vs. standard SRAMs - critical for always-on sensor nodes and wearable health monitors |
| Dual Chip Enable Logic (CE1/CE2) | Enables seamless 256 K × 8 memory expansion across multiple devices using only two control lines - eliminates need for external address decoders |
| Automatic Power-Down Mode | Enters sub-µA standby state within 45 ns of CE deassertion - eliminates software-controlled sleep entry overhead in RTOS environments |
| Pb-Free 36-Ball VFBGA | 0.5 mm pitch, 5.0 × 6.0 mm footprint - supports high-density layout in <100 mm² handheld PCBs while meeting automotive AEC-Q200 mechanical shock requirements |
| Guaranteed Data Retention at 1.5 V | Maintains stored contents during brown-out events or backup battery transitions - enables fail-safe logging in industrial PLCs and telematics units |
Applications
| Cellular Handset Baseband Memory | Portable Medical Monitor Buffer |
|---|---|
Use Scenario: Stores real-time baseband processing buffers and protocol stack variables in GSM/UMTS handsets operating on single-cell Li-ion (3.0–3.6 V). IC Role / Device Role / Timing Role: Byte-wide SRAM providing deterministic 45 ns read/write access for DSP co-processor data exchange. Use Value: MoBL® 1 µA standby current extends talk time by 12+ hours versus legacy 3.3 V SRAMs; VFBGA package fits beneath display module in 12 mm × 12 mm RF shield area. | Use Scenario: Holds ECG waveform samples and calibration coefficients in battery-powered handheld cardiac analyzers with 24/7 monitoring capability. IC Role / Device Role / Timing Role: Nonvolatile buffer retaining patient data during battery swap or low-voltage brown-out (down to 1.5 V). Use Value: Guaranteed data retention at 1.5 V prevents loss of diagnostic waveforms; industrial temperature rating ensures reliability in field-deployed units exposed to ambient swings. |
| Automotive Infotainment Head Unit Cache | Industrial PLC Communication Module RAM |
Use Scenario: Caches navigation map tiles and UI assets in automotive-grade head units requiring –40 °C to +85 °C operation and AEC-Q100 compliance. IC Role / Device Role / Timing Role: High-speed SRAM interfaced to ARM Cortex-A53 application processor via 8-bit parallel bus with CE/OE/WE controls. Use Value: Dual CE logic simplifies memory mapping across multiple OS partitions; Pb-free VFBGA withstands reflow and thermal cycling per JESD22-A104. | Use Scenario: Provides scratchpad memory for Modbus TCP gateway firmware executing on RISC-V MCU in factory-floor programmable logic controllers. IC Role / Device Role / Timing Role: Low-power, pin-compatible replacement for CY62138CV33 in legacy industrial designs undergoing obsolescence mitigation. Use Value: 2.2–3.6 V voltage range matches wide-input DC-DC outputs in 24 V industrial power supplies; 45 ns timing meets deterministic scan-cycle deadlines. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS62WV2568BLL-45NLI | 45 ns access, 2.5–3.6 V supply, 32-pin TSOP I package - lacks dual CE and data retention below 2.0 V | Suitable for cost-sensitive consumer electronics where extended voltage margin and retention are not required | Select when board redesign permits TSOP I footprint and system operates above 2.5 V nominal |
| AS6C4008-45TIN | 45 ns access, 2.7–3.6 V supply, 32-pin SOIC - higher standby current (5 µA typ), no VFBGA option | Fits legacy industrial designs requiring through-hole or SOIC rework compatibility | Choose for drop-in replacement in existing SOIC-based control boards with stable 3.3 V rails |
Compared with IS62WV2568BLL-45NLI and AS6C4008-45TIN, CY62138FV30LL-45ZAXI uniquely supports 2.2 V operation, 1.5 V data retention, and dual CE logic - making it the only option for battery-backed portable and automotive systems requiring guaranteed low-voltage functionality and hierarchical memory control.
Availability
CY62138FV30LL-45ZAXI is available at Aetrix Electronics and suitable for cellular handset design, portable medical instrumentation, automotive infotainment systems, and industrial PLC communication modules requiring stable component supply across extended temperature and voltage ranges.
Supply support for CY62138FV30LL-45ZAXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance, low-power memory and microcontroller solutions for embedded systems, with headquarters in San Jose, CA.
The CY62138FV30 belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for portable and battery-operated applications demanding ultra-low standby current and wide input voltage tolerance without sacrificing speed.
FAQ
What is the maximum clock frequency supported by CY62138FV30LL-45ZAXI?
CY62138FV30LL-45ZAXI is an asynchronous SRAM and does not use a clock signal. Its performance is defined by access time (45 ns) and cycle time (45 ns), meaning it supports up to approximately 22.2 MHz random read/write operations when interfaced with a controller capable of meeting tRC, tAA, and tWC timing constraints without additional wait states.
Does CY62138FV30LL-45ZAXI require external pull-up or pull-down resistors on CE1, CE2, or OE?
No external biasing is required: CE1, CE2, and OE have CMOS-compatible input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.6 V at 2.2–2.7 V VCC) and negligible input leakage (<±1 µA). However, floating inputs must be avoided; unused control lines should be tied to VCC or GND per system logic state to prevent metastability and excess current draw.
Can CY62138FV30LL-45ZAXI operate reliably at 2.2 V across the full –40 °C to +85 °C range?
Yes - the device is fully specified and tested at 2.2 V minimum supply across the industrial/automotive-A temperature range. All AC and DC parameters, including 45 ns access time and 1 µA standby current, are guaranteed at VCC = 2.2 V and TA = –40 °C to +85 °C per datasheet Rev. *N Section 4 (Operating Range) and Table on Page 11.
Is the 36-ball VFBGA package of CY62138FV30LL-45ZAXI compatible with standard reflow profiles?
Yes - the Pb-free VFBGA package complies with IPC/JEDEC J-STD-020D moisture sensitivity level 3 and supports peak reflow temperatures up to 260 °C. Recommended profile follows JEDEC MSLE Level 3: 60-minute floor life, preheat ramp ≤ 3 °C/s, soak at 150–200 °C for 60–120 s, and peak at 235–245 °C for 20–40 s.
CY62138FV30LL-45ZAXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 32-TFSOP (0.465", 11.80mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 2Mbit
- Memory Organization:
- 256K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-sTSOP
CY62138FV30LL-45ZAXI FAQ
1.How can I place an order for CY62138FV30LL-45ZAXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62138FV30LL-45ZAXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62138FV30LL-45ZAXI reliable?
The price and inventory of CY62138FV30LL-45ZAXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62138FV30LL-45ZAXI is usually 5 days.
3.What payment methods are accepted for CY62138FV30LL-45ZAXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62138FV30LL-45ZAXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62138FV30LL-45ZAXI?
CY62138FV30LL-45ZAXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62138FV30LL-45ZAXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62138FV30LL-45ZAXI?
For technical support, including CY62138FV30LL-45ZAXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62138FV30LL-45ZAXI requirements.
6.How does Aetrix verify that CY62138FV30LL-45ZAXI is sourced from the original manufacturer or authorized distributors?
All CY62138FV30LL-45ZAXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62138FV30LL-45ZAXI meets industry standards.
7.What is the process for return or replacement of CY62138FV30LL-45ZAXI?
All CY62138FV30LL-45ZAXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62138FV30LL-45ZAXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62138FV30LL-45ZAXI part is unused and in its original packaging.
Return procedure for CY62138FV30LL-45ZAXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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