Infineon Technologies CY62138FV30LL-45ZSXIT

Overview

CY62138FV30LL-45ZSXIT from Cypress Semiconductor is a 2-Mbit (256 K × 8) CMOS static RAM with 45 ns access time, 2.2–3.6 V supply voltage, and ultra-low standby current (1 µA typical). It operates across –40 °C to +85 °C and uses dual chip enables (CE1/CE2), OE, and WE for precise memory control in portable battery-powered systems.

For engineers reviewing the CY62138FV30LL-45ZSXIT datasheet, CY62138FV30LL-45ZSXIT pinout, CY62138FV30LL-45ZSXIT application, or CY62138FV30LL-45ZSXIT equivalent, this SRAM supports low-power embedded data buffering, real-time firmware storage, and fast-access cache in space-constrained industrial and automotive-A designs.

Technical Context

This SRAM implements a synchronous, non-volatile-retention-free CMOS architecture with automatic CE-controlled power-down mode. Its dual chip enable logic (CE1 LOW + CE2 HIGH = active) enables hierarchical memory banking and seamless expansion across multiple devices without external glue logic.

It delivers deterministic 45 ns read/write timing under full industrial temperature and voltage range (2.2–3.6 V), with guaranteed tAA ≤ 45 ns, tDOE ≤ 22 ns, and tHZOE ≤ 18 ns - enabling direct interface with 20 MHz microcontrollers and FPGA peripherals without wait states.

Key Specifications

Pinout & Package

Packaged in Pb-free 36-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), footprint code ZSXIT per ordering nomenclature. Ball pitch: 0.5 mm; body size: 6.0 mm × 8.0 mm × 0.55 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS61LV25616AL-10TLI and AS6C4008-55ZIN, the CY62138FV30LL-45ZSXIT uniquely balances ultra-low standby power, wide VCC range, automotive-A qualification, and dual CE expandability - making it optimal for battery-critical, thermally demanding, and modular memory architectures.

Availability

CY62138FV30LL-45ZSXIT is available at Aetrix Electronics and suitable for portable medical sensors, automotive ADAS logging, and industrial PLC I/O caching requiring stable component supply across extended product lifecycles.

Supply support for CY62138FV30LL-45ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and consumer systems.

This device belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power, battery-operated embedded systems requiring deterministic timing and extended data retention during supply dips.

FAQ

What is the minimum VCC required to retain data in CY62138FV30LL-45ZSXIT?

Data retention is guaranteed down to 1.5 V VCC, as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤4 µA, allowing operation during brown-out or capacitor-backed hold-up periods without data loss. This is independent of temperature and applies across the full –40 °C to +85 °C range.

Can CE1 and CE2 be tied together for single-enable operation?

Yes - CE1 and CE2 may be externally wired together and driven by a single controller signal, provided the logic levels meet CMOS thresholds (VIH ≥ 2.2 V at VCC ≥ 2.7 V). Doing so reduces pin count but forfeits bank-select capability and eliminates the ability to daisy-chain multiple devices using CE2 as a cascade enable.

Is the 36-ball VFBGA (ZSXIT) package RoHS and REACH compliant?

Yes - the ZSXIT package is Pb-free and fully compliant with RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Material declarations and CoC documentation are available directly from Infineon's product change notifications and material compliance portal.

Does CY62138FV30LL-45ZSXIT support asynchronous burst reads?

No - this is a standard asynchronous SRAM with no burst capability. All accesses are random-address, single-word operations. Read and write cycles are initiated per address setup, CE/OE/WE assertion, and data valid timing as defined in the Switching Characteristics table; no internal address incrementing or burst counter is implemented.