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Infineon Technologies CY62138FV30LL-45ZXI
- Part No.:
- CY62138FV30LL-45ZXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 32-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
CY62138FV30LL-45ZXI.pdf
- Description:
- IC SRAM 2MBIT PARALLEL 32TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:1,165
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Product details
Overview
CY62138FV30LL-45ZXI from Cypress Semiconductor is a 2-Mbit (256 K × 8) CMOS static RAM with 45 ns access time, 2.2 V–3.6 V supply voltage, and industrial/automotive-A temperature range (–40 °C to +85 °C). It features ultra-low standby current (1 µA typ.), active current of 1.6 mA at 1 MHz, and automatic power-down on chip deselect - designed for battery-constrained portable systems requiring fast, low-power volatile memory.
For engineers reviewing the CY62138FV30LL-45ZXI datasheet, CY62138FV30LL-45ZXI pinout, CY62138FV30LL-45ZXI application, or CY62138FV30LL-45ZXI equivalent, key selection criteria include dual chip enable (CE1/CE2) logic for flexible memory expansion, high-impedance I/O control during deselect/write/OE-high states, and Pb-free 36-ball VFBGA packaging compatible with space-constrained PCB layouts.
Technical Context
This SRAM implements complementary metal oxide semiconductor (CMOS) architecture optimized for speed-power trade-off, supporting asynchronous read/write operations without clocks or refresh circuitry. Its dual CE inputs (CE1 LOW + CE2 HIGH for selection) enable hierarchical memory mapping in multi-chip systems.
Operation relies on address latching via A0–A17 (18-bit), bidirectional data transfer on I/O0–I/O7, and independent OE/WE controls for read/write timing isolation. Power management is achieved through automatic transition to standby mode when CE1 is HIGH or CE2 is LOW, reducing ICCDR to ≤4 µA at 1.5 V retention voltage.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256 K × 8 bits = 2-Mbit total capacity; supports byte-wide data bus interfacing without external demultiplexing. |
| Access Time | 45 ns max; enables direct interface with microcontrollers operating up to ~12 MHz bus frequency without wait states. |
| Supply Voltage Range | 2.20 V to 3.60 V; compatible with single-supply 2.5 V or 3.3 V system rails and mixed-voltage I/O domains. |
| Standby Current | 1 µA typical / 5 µA max at VCC = 3.6 V; extends battery life in always-on or sleep-mode portable devices. |
| Active Current | 1.6 mA typical at f = 1 MHz; ensures low dynamic power during frequent memory access in real-time embedded applications. |
| Data Retention Voltage | 1.5 V min; allows memory state preservation during brown-out or backup-battery operation without full power rail. |
| Operating Temperature | –40 °C to +85 °C; qualified for industrial automation and automotive-A environments per AEC-Q100 stress requirements. |
Pinout & Package
Package: 36-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 × 6 mm, 0.5 mm pitch, Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus; selects one of 256K locations; no internal latching - requires stable address during CE/OE/WE assertion. |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit parallel I/O; high-impedance when deselected (CE1 HIGH or CE2 LOW), during write (WE LOW), or OE HIGH. |
| CE1, CE2 | Chip Enable Controls | Dual-enable logic: device selected only when CE1 = LOW AND CE2 = HIGH; enables bank selection and power-gating granularity. |
| OE | Output Enable | Controls output driver activation during read; must be LOW with CE asserted and WE HIGH to place data on I/O pins. |
| WE | Write Enable | Initiates write cycle when LOW with CE asserted; data on I/O pins is latched on WE falling edge or CE deassertion. |
| VCC, VSS | Power Supply | VCC = 2.2–3.6 V core supply; VSS = ground reference; decoupling required within 5 mm of VFBGA balls for signal integrity. |
| NC | No Connect | Two NC balls (A17, A16 positions in VFBGA top view); not bonded internally - must remain unconnected on PCB. |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | Reduces standby current to 1 µA typical - critical for cellular handsets and wearables requiring >1-week battery life in sleep mode. |
| Dual Chip Enable (CE1/CE2) | Enables seamless memory expansion across multiple CY62138FV30LL devices using hierarchical CE decoding without external logic. |
| Automatic Power-Down | Transitions to sub-5 µA standby automatically when CE1 HIGH or CE2 LOW - eliminates need for software-controlled power sequencing. |
| High-Speed 45 ns Access | Meets timing budgets for ARM Cortex-M4/M7 peripherals and FPGA-based controllers running at ≥12 MHz system clock. |
| Pb-Free VFBGA Packaging | 36-ball footprint supports high-density layout in compact modules (e.g., GPS trackers, medical sensors) while meeting RoHS compliance. |
Applications
| Portable Medical Sensors | Industrial PLC Data Buffers |
|---|---|
|
Use Scenario: Real-time acquisition and temporary storage of ECG waveform samples in battery-powered patient monitors before Bluetooth transmission. IC Role / Device Role / Timing Role: Volatile frame buffer holding 256 KB of raw sensor data; accessed asynchronously by MCU DMA engine at 1 kHz sampling rate. Use Value: 45 ns access time prevents DMA stalls; 1 µA standby current extends 24-hour runtime on coin-cell battery. |
Use Scenario: Storing transient I/O status and diagnostic logs in modular programmable logic controllers deployed in factory-floor cabinets. IC Role / Device Role / Timing Role: Non-refreshed scratchpad memory for cyclic process data exchange between CPU and fieldbus interface ASICs. Use Value: Industrial temperature rating (–40 °C to +85 °C) ensures reliability in unconditioned control panels; dual CE supports hot-swap module detection. |
| Automotive Infotainment Head Units | Wireless IoT Edge Nodes |
|
Use Scenario: Caching navigation map tiles and UI assets in automotive-grade head units where power cycling occurs frequently during ignition events. IC Role / Device Role / Timing Role: Fast-access working memory for ARM application processor during boot and UI rendering phases. Use Value: Automotive-A qualification guarantees operation under vehicle electrical transients; 1.5 V data retention preserves cache state during cold cranking. |
Use Scenario: Storing sensor fusion results and encrypted packet payloads in LPWAN-enabled environmental monitoring nodes powered by energy harvesting. IC Role / Device Role / Timing Role: Low-leakage volatile memory bridging intermittent MCU wake-ups and RF transmission bursts. Use Value: Sub-5 µA ISB2 current minimizes quiescent drain on supercapacitor storage; VFBGA package fits <10 mm² PCB area budget. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV2568BLL-45NLI | Same 256K × 8 organization, 45 ns speed, and –40 °C to +85 °C rating; differs in CE logic (single CE input) and SOIC/VFBGA package options. | Lacks dual CE for hierarchical expansion; requires external gating for multi-SRAM systems; identical VCC range and standby current. | Select when board layout uses SOIC-32 or simpler CE control is preferred over Cypress's CE1/CE2 flexibility. |
| ON Semiconductor CAT2568WI-GT3 | 256K × 8 SRAM with 45 ns access but rated only to +70 °C (commercial); higher typical standby current (3 µA) and no automotive qualification. | Not suitable for automotive-A or extended industrial use; acceptable for cost-sensitive consumer electronics with ambient <70 °C. | Choose only for non-automotive, non-industrial designs where temperature margin and qualification are not required. |
Compared with IS62WV2568BLL-45NLI and CAT2568WI-GT3, CY62138FV30LL-45ZXI uniquely delivers dual CE logic for scalable memory architectures, automotive-A qualification, and lowest guaranteed standby current (5 µA max), making it optimal for safety-critical or battery-limited deployments.
Availability
CY62138FV30LL-45ZXI is available at Aetrix Electronics and suitable for portable medical sensors, industrial PLC data buffers, and automotive infotainment head units requiring stable component supply across long production lifecycles.
Supply support for CY62138FV30LL-45ZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance, low-power memory and microcontroller solutions for embedded systems, with headquarters in San Jose, CA.
CY62138FV30 belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for portable and energy-sensitive applications where nanosecond-speed access must coexist with microamp-level standby consumption.
FAQ
What is the minimum VCC required to retain data in CY62138FV30LL-45ZXI?
The device guarantees data retention down to VCC = 1.5 V, as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤4 µA under industrial/automotive-A conditions. Operation below 1.5 V risks data loss, and no timing or functional behavior is characterized below this threshold.
Can CY62138FV30LL-45ZXI operate with CE1 and CE2 tied together?
No - CE1 and CE2 implement complementary logic: the device is selected only when CE1 is LOW and CE2 is HIGH. Tying them together forces either both LOW (no selection) or both HIGH (no selection), preventing any read/write operation. External logic is required to generate the correct CE1/CE2 pair for enable/disable control.
Is the 36-ball VFBGA package of CY62138FV30LL-45ZXI compatible with standard reflow profiles?
Yes - the Pb-free VFBGA package is qualified for IPC/JEDEC J-STD-020D reflow profiles, including peak temperatures up to 260 °C for ≤60 seconds. Thermal resistance data (θJA = 38.49 °C/W) confirms suitability for convection-reflow processes on standard FR-4 PCBs with two-layer copper pours.
Does CY62138FV30LL-45ZXI require an external clock or refresh signal?
No - it is a fully asynchronous static RAM. All operations are controlled solely by address, CE1/CE2, OE, and WE timing. No clock, refresh controller, or periodic access is needed to maintain data integrity, simplifying integration with microcontrollers lacking dedicated SRAM interfaces.
CY62138FV30LL-45ZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 32-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 2Mbit
- Memory Organization:
- 256K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-TSOP I
CY62138FV30LL-45ZXI FAQ
1.How can I place an order for CY62138FV30LL-45ZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62138FV30LL-45ZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62138FV30LL-45ZXI reliable?
The price and inventory of CY62138FV30LL-45ZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62138FV30LL-45ZXI is usually 5 days.
3.What payment methods are accepted for CY62138FV30LL-45ZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62138FV30LL-45ZXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62138FV30LL-45ZXI?
CY62138FV30LL-45ZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62138FV30LL-45ZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62138FV30LL-45ZXI?
For technical support, including CY62138FV30LL-45ZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62138FV30LL-45ZXI requirements.
6.How does Aetrix verify that CY62138FV30LL-45ZXI is sourced from the original manufacturer or authorized distributors?
All CY62138FV30LL-45ZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62138FV30LL-45ZXI meets industry standards.
7.What is the process for return or replacement of CY62138FV30LL-45ZXI?
All CY62138FV30LL-45ZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62138FV30LL-45ZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62138FV30LL-45ZXI part is unused and in its original packaging.
Return procedure for CY62138FV30LL-45ZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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