Infineon Technologies CY62138FV30LL-45ZXIT

Overview

CY62138FV30LL-45ZXIT from Cypress Semiconductor is a 2-Mbit (256 K × 8) CMOS static RAM with 45 ns access time, 2.2–3.6 V supply voltage, and ultra-low standby current (1 µA typical). It supports industrial/automotive-A temperature range (–40 °C to +85 °C) and features dual chip enables (CE1/CE2), automatic power-down, and MoBL™ low-power architecture for battery-constrained portable systems.

For engineers reviewing the CY62138FV30LL-45ZXIT datasheet, CY62138FV30LL-45ZXIT pinout, CY62138FV30LL-45ZXIT application, or CY62138FV30LL-45ZXIT equivalent, key selection criteria include its 45 ns read cycle time, dual CE control logic, 36-ball VFBGA package compatibility, and verified data retention at 1.5 V - critical for always-on memory backup and low-voltage sleep modes.

Technical Context

The CY62138FV30LL-45ZXIT implements a synchronous, non-volatile-retentive SRAM core with complementary metal oxide semiconductor (CMOS) process technology optimized for speed/power trade-off. Its dual chip enable architecture (CE1 active-low, CE2 active-high) enables hierarchical memory banking and seamless expansion across multiple devices without external gating logic.

It delivers deterministic timing with tAA = 45 ns, tDOE = 22 ns, and tHZOE = 18 ns, supporting high-speed microcontroller interfaces and burst-mode data logging. The device enters automatic power-down when CE1 is HIGH or CE2 is LOW, reducing ICCDR to ≤4 µA at VCC = 1.5 V while retaining stored data.

Key Specifications

Pinout & Package

Package: 36-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 5 mm × 6 mm, 0.5 mm pitch, RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 2-Mbit SRAM applications.

Compared with IS62WV2568BLL-45NLI and AS6C4008-45TIN, the CY62138FV30LL-45ZXIT uniquely supports 2.2 V operation, dual CE logic, and guaranteed 1.5 V data retention - making it the only choice for battery-backed, multi-rail, or automotive-grade SRAM deployments requiring guaranteed low-voltage state hold.

Availability

CY62138FV30LL-45ZXIT is available at Aetrix Electronics and suitable for portable medical sensors, industrial PLC data logging, and automotive infotainment UI cache requiring stable component supply across extended product lifecycles.

Supply support for CY62138FV30LL-45ZXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and microcontroller solutions for industrial, automotive, and consumer applications, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q100.

The CY62138FV30 belongs to Cypress's MoBL® (More Battery Life) SRAM product line, engineered specifically for ultra-low-power, high-speed volatile memory in portable and energy-constrained embedded systems.

FAQ

What is the maximum clock frequency supported by CY62138FV30LL-45ZXIT?

The CY62138FV30LL-45ZXIT does not use a clock signal; it is an asynchronous SRAM. Its 45 ns access time corresponds to a maximum effective interface frequency of approximately 22 MHz for read cycles with zero wait states. Timing compliance depends on meeting tRC ≥ 45 ns, tAA ≤ 45 ns, and tDOE ≤ 22 ns under specified load and voltage conditions.

Can CY62138FV30LL-45ZXIT operate reliably at 2.2 V across the full temperature range?

Yes. The device is fully specified for 2.2 V to 3.6 V operation over –40 °C to +85 °C. Electrical characteristics including tRC = 45 ns, ISB2 ≤ 5 µA, and VOH ≥ 2.0 V are guaranteed at VCC = 2.2 V and TA = –40 °C to +85 °C per datasheet Table 4 and Operating Range specification.

How does the dual CE architecture (CE1/CE2) improve system design?

CE1 (active-low) and CE2 (active-high) form a logical AND-enable function: the device activates only when CE1 = LOW and CE2 = HIGH. This allows hierarchical memory mapping - e.g., CE2 tied to upper address bit for bank selection, CE1 driven by controller - eliminating external decode logic and reducing PCB routing complexity in multi-SRAM systems.

Is the 36-ball VFBGA package lead-free and RoHS compliant?

Yes. The CY62138FV30LL-45ZXIT carries the "Z" suffix denoting Pb-free (lead-free) construction and full RoHS compliance per EU Directive 2011/65/EU. The package uses NiPdAu surface finish and meets JEDEC J-STD-020D moisture sensitivity level 3 (MSL3) requirements.