Infineon Technologies CY62146ELL-45ZSXAT

Overview

CY62146ELL-45ZSXAT from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16) CMOS static RAM with 45 ns access time, 4.5–5.5 V supply range, and ultra-low standby current (2.5 µA typical). It features byte-wide control (BHE/ BLE), automatic CE power-down, and TTL-level compatibility-designed for battery-sensitive industrial and automotive-A applications requiring reliable non-volatile data buffering.

For engineers reviewing the CY62146ELL-45ZSXAT datasheet, CY62146ELL-45ZSXAT pinout, CY62146ELL-45ZSXAT application, or CY62146ELL-45ZSXAT equivalent, key selection criteria include its 44-pin TSOP II package, 256K × 16 organization, 45 ns read cycle, 7 µA max ISB2, and BHE/ BLE-controlled 8-bit I/O partitioning in embedded memory subsystems.

Technical Context

The CY62146ELL-45ZSXAT implements a fully static 256K × 16 RAM array with independent byte enable logic for high- and low-byte access. Its CMOS architecture supports TTL-compatible input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V) and delivers guaranteed 45 ns tRC across –40 °C to +85 °C.

Power management relies on dual-stage control: CE-driven automatic power-down reduces ICC to ≤7 µA when deselected, while data retention operates down to 2.0 V with ICCDR ≤ 8.8 µA. Output drivers support 2.1 mA sink capability and high-impedance tri-state control via OE, CE, BHE, and BLE.

Key Specifications

Pinout & Package

Package: 44-pin Thin Small Outline Package (TSOP) Type II, 400 mil width, lead-free (Pb-free), RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IS61LV25616AL-10TLI and AS6C4008-55TIN, the CY62146ELL-45ZSXAT uniquely balances 5 V TTL compatibility, ultra-low 7 µA standby, and TSOP II manufacturability-making it the sole choice for cost-sensitive, thermally constrained 5 V industrial upgrades.

Availability

CY62146ELL-45ZSXAT is available at Aetrix Electronics and suitable for industrial programmable logic controllers, automotive body control modules, and portable medical diagnostic devices requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY62146ELL-45ZSXAT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and memory solutions-with annual revenue exceeding €14 billion and operations in 35+ countries.

This device belongs to Infineon's MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power data buffering in battery-operated and thermally constrained industrial and automotive-A grade systems.

FAQ

Is CY62146ELL-45ZSXAT compatible with 5 V TTL microcontrollers without level shifting?

Yes. The device accepts VIH ≥ 2.2 V and VIL ≤ 0.8 V across its full 4.5–5.5 V VCC range, matching standard 5 V TTL logic thresholds. It has been validated with Intel 80C186 and Motorola 68HC11 families-no external level shifters are required for signal integrity or timing compliance.

What is the maximum junction temperature under continuous operation at 85 °C ambient?

With θJA = 55.52 °C/W and max ICC = 20 mA at VCC = 5.5 V, power dissipation is 110 mW. At 85 °C ambient, junction temperature reaches 85 + (110 mW × 55.52) ≈ 91.1 °C-well below the 125 °C absolute maximum rating, ensuring safe operation in sealed enclosures.

Can BHE and BLE be used simultaneously for 16-bit reads/writes?

Yes. When both BHE and BLE are LOW, all 16 I/O lines (I/O0–I/O15) are active for full-word access. The truth table on page 11 confirms concurrent byte enable operation during CE/OE/WE-controlled cycles-enabling native 16-bit bus efficiency without external gating logic.

Does the device retain data during brief VCC interruptions, and what is the minimum hold voltage?

Yes. At VCC ≥ 2.0 V, the device enters data retention mode with ICCDR ≤ 8.8 µA. The tCDR (chip deselect to retention) is instantaneous, and tR (recovery time) is 45 ns-allowing seamless resumption after brown-outs as short as 100 µs, provided VCC remains ≥2.0 V during interruption.