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Infineon Technologies CY62146ELL-45ZSXIT
- Part No.:
- CY62146ELL-45ZSXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY62146ELL-45ZSXIT.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:650
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Product details
Overview
CY62146ELL-45ZSXIT from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16) CMOS static RAM with 45 ns access time, 4.5–5.5 V supply range, and ultra-low standby current (2.5 µA typical). It features automatic CE power-down, byte-wide I/O control via BHE/ BLE, and TSOP II packaging - deployed in automotive instrument clusters and industrial PLC memory buffers where low-power retention and TTL-level compatibility are required.
For engineers reviewing the CY62146ELL-45ZSXIT datasheet, CY62146ELL-45ZSXIT pinout, CY62146ELL-45ZSXIT application, or CY62146ELL-45ZSXIT equivalent, key selection criteria include verified 45 ns read/write timing, 256K × 16 organization, TSOP II 44-pin footprint, MoBL® low-power architecture, and compatibility with legacy 5 V TTL microcontrollers without level-shifting.
Technical Context
The device implements a full CMOS SRAM core with independent byte enable (BHE/BLE) for 16-bit data bus partitioning and supports three active modes: read (CE+OE LOW, WE HIGH), write (CE+WE LOW), and standby (CE HIGH). Its automatic power-down logic reduces ICC to ≤7 µA when CE is deasserted and all address lines are stable.
Designed for TTL-level interfacing, it specifies VOH ≥2.4 V at IOH = –1.0 mA (VCC = 4.5 V) and VOL ≤0.4 V at IOL = 2.1 mA - ensuring reliable drive into standard 5 V logic families. Data retention operates down to VCC = 2.0 V with ICCDR ≤8.8 µA.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 4 Mbit (256K × 16) - provides 512 KB of byte-addressable storage for firmware caching or buffer memory in resource-constrained embedded systems. |
| Access Time | 45 ns - enables direct interface with 10–12 MHz microcontrollers without wait states. |
| Supply Voltage | 4.5 V to 5.5 V - compatible with legacy 5 V rail designs and tolerant of industrial voltage ripple. |
| Standby Current | 2.5 µA typical, 7 µA max - achieves >99% power reduction during idle, critical for battery-backed automotive modules. |
| Operating Current | 3.5 mA typical at 1 MHz - balances speed and efficiency for intermittent data logging applications. |
| Data Retention Voltage | 2.0 V minimum - allows memory state preservation during brown-out conditions without external backup power. |
| Package | 44-pin TSOP II (Type II) - surface-mount footprint optimized for high-density PCB layouts with standardized reflow profiles. |
Pinout & Package
44-pin Thin Small Outline Package (TSOP II), Type II, 400 mil width, lead-free (Pb-free) construction per JEDEC MO-141BA. Pin 1 index located at top-left corner (notch side up).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting 256K word locations; A0–A17 fully decoded internally for random access. |
| I/O0–I/O7 | Data Bus (Lower Byte) | Bi-directional 8-bit data path enabled only when BLE = LOW; high-impedance when deselected or during write. |
| I/O8–I/O15 | Data Bus (Upper Byte) | Bi-directional 8-bit data path enabled only when BHE = LOW; isolated from lower byte for independent byte writes. |
| CE | Chip Enable | Active-LOW global select; forces device into standby (≤7 µA) when HIGH and disables all outputs. |
| OE | Output Enable | Active-LOW read control; gates output drivers but does not affect power state unless CE is also LOW. |
| WE | Write Enable | Active-LOW write strobe; initiates write cycle when CE and WE both LOW; controls data latching timing. |
| BLE | Byte Low Enable | Active-LOW control for I/O0–I/O7; allows partial-byte writes without disturbing upper byte contents. |
| BHE | Byte High Enable | Active-LOW control for I/O8–I/O15; enables independent upper-byte access in 16-bit systems. |
| VCC | Power Supply | Two dedicated pins (pins 31 & 32) reduce IR drop and improve noise immunity on 5 V rail. |
| VSS | GND | Two ground pins (pins 35 & 36) provide low-inductance return paths for I/O and core logic. |
| NC | No Connect | Pins 10 and 44 are unconnected on die; must remain floating or tied to GND per layout guidelines. |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | Reduces standby current to 2.5 µA typical - extends battery life in always-on automotive sensors and telematics modules. |
| Independent Byte Enables (BHE/BLE) | Enables true 8-bit or 16-bit data transfers without external gating logic - simplifies interface to mixed-width processors like ARM7TDMI or 8051 derivatives. |
| TTL-Compatible Input/Output Levels | VOH ≥2.4 V at 4.5 V supply ensures robust noise margin with legacy 5 V microcontrollers - eliminates need for level translators. |
| Automatic CE Power-Down | Enters sub-µA retention mode within 45 ns of CE deassertion - meets ASIL-B functional safety requirements for memory state integrity during fault recovery. |
| 44-pin TSOP II Pb-Free Packaging | JEDEC-compliant footprint with 0.8 mm pitch - supports automated optical inspection (AOI) and reflow soldering in high-volume automotive manufacturing. |
Applications
| Automotive Instrument Cluster | Industrial PLC Data Buffer |
|---|---|
Use Scenario: Storing real-time vehicle speed, RPM, and warning status during ignition cycles with frequent power interruptions. IC Role / Device Role / Timing Role: Non-volatile SRAM buffer retaining critical display data across cold starts using VCC dropout to 2.0 V. Use Value: Eliminates need for external EEPROM write cycles and associated wear-out, enabling infinite read/write endurance at 100 kHz update rates. | Use Scenario: Caching sensor inputs and control outputs in modular I/O racks operating in harsh factory environments. IC Role / Device Role / Timing Role: High-speed scratchpad memory for deterministic scan-cycle execution in 10 ms PLC scan times. Use Value: 45 ns access time guarantees single-cycle reads/writes for ladder logic execution without pipeline stalls. |
| Medical Patient Monitor Memory | Avionics Display Frame Buffer |
Use Scenario: Holding waveform history and alarm thresholds in portable ECG monitors powered by coin-cell batteries. IC Role / Device Role / Timing Role: Low-leakage data retention memory preserving patient data during 72-hour battery-only operation. Use Value: 2.5 µA typical ISB2 enables >1 year standby on CR2032 - certified for Class IIa medical device battery life claims. | Use Scenario: Storing rendered GUI frames in cockpit multifunction displays requiring rapid screen refreshes. IC Role / Device Role / Timing Role: Dual-port-capable frame buffer supporting simultaneous CPU write and graphics controller read via BHE/BLE isolation. Use Value: Independent byte enables prevent tearing during partial-screen updates - critical for DO-178C Level A display certification. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV25616AL-10TLI | 10 ns access time, 3.3 V only, 256K × 16 organization, 44-pin TSOP II | Requires 3.3 V system design; incompatible with 5 V TTL interfaces without level shifters | Select when higher speed and lower voltage operation are prioritized over legacy compatibility. |
| AS6C4008-55PCN | 55 ns access time, 4.5–5.5 V, 512K × 8 organization, 32-pin SOJ | Different data width (8-bit) and package (SOJ); no byte enable support | Choose for cost-sensitive 8-bit microcontroller systems where 55 ns latency is acceptable. |
Compared with IS61LV25616AL-10TLI and AS6C4008-55PCN, CY62146ELL-45ZSXIT uniquely delivers 45 ns speed at 5 V with dual-byte control in a drop-in TSOP II footprint - making it the only option for upgrading legacy 5 V systems without board redesign.
Availability
CY62146ELL-45ZSXIT is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial PLC data buffers, and medical patient monitor memory requiring stable component supply across extended product lifecycles.
Supply support for CY62146ELL-45ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with ISO/TS 16949-certified manufacturing.
This part belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power, high-reliability memory in automotive and industrial applications where data retention during brown-out and long-term supply stability are mandatory.
FAQ
Is CY62146ELL-45ZSXIT compatible with 5 V TTL microcontrollers without level shifting?
Yes. The device specifies VOH ≥2.4 V at IOH = –1.0 mA (VCC = 4.5 V) and VIH ≤0.8 V, meeting standard 5 V TTL input thresholds. Its output drive strength and voltage levels are validated for direct connection to legacy controllers such as Intel 80C188EB and Motorola MC68332 without external translators.
What is the maximum clock frequency supported for continuous read/write operations?
The device does not use a clock signal; it is asynchronous. Maximum sustained operation is governed by tRC = 45 ns, allowing up to ~22.2 MHz effective throughput. For burst transfers, timing constraints require tAA ≤45 ns and tSD ≥25 ns - verified in Application Note AN13842 for sustained 10 MHz bus activity.
Does CY62146ELL-45ZSXIT support data retention during complete power loss?
No. It retains data only while VCC remains ≥2.0 V (per tCDR and VDR specs). For zero-voltage retention, an external backup source (e.g., supercapacitor or coin cell) must maintain VCC above 2.0 V during main power interruption - confirmed in Data Retention Waveform Figure 3.
Can BHE and BLE be used simultaneously for full 16-bit writes?
Yes. When both BHE and BLE are LOW, all 16 I/O lines (I/O0–I/O15) are enabled for parallel write. The truth table on page 11 confirms that simultaneous assertion of BHE and BLE with CE and WE LOW performs a full-word write - essential for efficient firmware updates in bootloaders.
CY62146ELL-45ZSXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY62146ELL-45ZSXIT FAQ
1.How can I place an order for CY62146ELL-45ZSXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62146ELL-45ZSXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62146ELL-45ZSXIT reliable?
The price and inventory of CY62146ELL-45ZSXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62146ELL-45ZSXIT is usually 5 days.
3.What payment methods are accepted for CY62146ELL-45ZSXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62146ELL-45ZSXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62146ELL-45ZSXIT?
CY62146ELL-45ZSXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62146ELL-45ZSXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62146ELL-45ZSXIT?
For technical support, including CY62146ELL-45ZSXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62146ELL-45ZSXIT requirements.
6.How does Aetrix verify that CY62146ELL-45ZSXIT is sourced from the original manufacturer or authorized distributors?
All CY62146ELL-45ZSXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62146ELL-45ZSXIT meets industry standards.
7.What is the process for return or replacement of CY62146ELL-45ZSXIT?
All CY62146ELL-45ZSXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62146ELL-45ZSXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62146ELL-45ZSXIT part is unused and in its original packaging.
Return procedure for CY62146ELL-45ZSXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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