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Infineon Technologies CY62146ESL-45ZSXI

Part No.:
CY62146ESL-45ZSXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
44-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixCY62146ESL-45ZSXI.pdf
Description:
IC SRAM 4MBIT PARALLEL 44TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:554

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Product details

Overview

CY62146ESL-45ZSXI from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16) CMOS static RAM with 45 ns access time, operating across dual voltage ranges (2.2–3.6 V and 4.5–5.5 V), ultra-low standby current (7 µA max), and automatic CE-controlled power-down mode. It serves as a low-power, high-speed data buffer in portable industrial controllers and battery-powered telemetry modules.

For engineers reviewing the CY62146ESL-45ZSXI datasheet, CY62146ESL-45ZSXI pinout, CY62146ESL-45ZSXI application, or CY62146ESL-45ZSXI equivalent, key selection criteria include its MoBL®-optimized active/standby current ratio, byte-wide I/O control via BHE/BLE, TSOP II package compatibility, and guaranteed operation over –40°C to +85°C industrial temperature range.

Technical Context

The CY62146ESL-45ZSXI implements a full CMOS SRAM architecture with independent byte enable (BHE/BLE) for 16-bit data bus partitioning, enabling selective 8-bit writes without read-modify-write cycles. Its automatic power-down activates when CE is HIGH and address lines are stable, reducing ICC to ≤7 µA.

It supports asynchronous read/write with strict timing constraints: tRC = 45 ns, tDOE = 22 ns, tHZOE = 18 ns, and tPD = 45 ns. All I/O pins enter high-impedance state during deselection (CE HIGH), OE HIGH, or write (WE LOW), ensuring clean bus sharing in multi-device systems.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 4 Mbit (256K × 16) - supports 16-bit microcontroller data buses without external multiplexing
Access Time 45 ns - enables direct interface with 22 MHz synchronous peripherals or legacy 8051/ARM7 buses
Voltage Range 2.2–3.6 V and 4.5–5.5 V - allows single-SRAM use across 3.3 V logic and 5 V legacy systems
Standby Current 7 µA max at VCC(max) - extends battery life >1 year in sleep-mode sensor nodes with infrequent wake-ups
Active Current 6 mA max at fmax - limits thermal rise in sealed enclosures during burst data logging
Data Retention Voltage 1.5 V min - maintains memory state during brown-out events or backup-supply transitions
Operating Temperature –40°C to +85°C - qualified for industrial motor drives and outdoor metering applications

Pinout & Package

Package: 44-pin Thin Small Outline Package (TSOP II), 400 mil width, lead-free, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
A0–A17 Address Inputs 18-bit address bus supporting full 256K-word addressing; no internal latching
I/O0–I/O7 Data Bus (Low Byte) Bi-directional 8-bit data path enabled only when BLE = LOW and CE/OE conditions met
I/O8–I/O15 Data Bus (High Byte) Bi-directional 8-bit data path enabled only when BHE = LOW and CE/OE conditions met
CE Chip Enable Active-LOW global enable; HIGH forces automatic power-down and high-Z I/Os
OE Output Enable Active-LOW read control; HIGH disables outputs regardless of CE/WE state
WE Write Enable Active-LOW write strobe; must be LOW with CE LOW to initiate write cycle
BLE Byte Low Enable Active-LOW control for I/O0–I/O7; enables partial-byte writes without disturbing high byte
BHE Byte High Enable Active-LOW control for I/O8–I/O15; enables partial-byte writes without disturbing low byte
VCC Power Supply Dual-rail compatible: accepts 2.2–3.6 V or 4.5–5.5 V; NC between VCC pins prevents noise coupling
VSS Ground Two dedicated ground pins reduce ground bounce during simultaneous byte writes
NC No Connect Pins 10 and 30 - physically present but unconnected on die; must remain floating or grounded per layout rules

Key Features

Feature Design Value
MoBL® Ultra-Low Power Architecture Reduces typical standby current to 2.5 µA - cuts quiescent power by >99% vs. standard SRAMs in sleep mode
Independent Byte Enables (BHE/BLE) Enables true 8-bit sub-word writes without read-modify-write overhead - critical for CAN message buffering
Automatic CE Power-Down Enters <7 µA standby automatically when CE is HIGH and addresses stable - eliminates need for external power gating
Wide Dual-Voltage Operation Single part replaces two voltage-binned SRAMs - simplifies BOM and reduces inventory SKUs for mixed-voltage designs
High-Reliability Data Retention Maintains data at VCC ≥ 1.5 V for indefinite duration - supports seamless transition to backup battery or supercapacitor hold-up

Applications

Industrial PLC I/O Module Portable Medical Monitor

Use Scenario: Real-time buffering of analog channel samples and digital status flags in DIN-rail mounted programmable logic controllers.

IC Role / Device Role / Timing Role: Asynchronous 16-bit SRAM providing zero-wait-state data capture for ARM Cortex-M4-based control engines.

Use Value: 45 ns access time ensures deterministic response to fast edge-triggered interrupts; dual-voltage support enables shared 3.3 V/5 V backplane power.

Use Scenario: Storing ECG waveform segments and patient alarm logs in handheld cardiac monitors powered by coin-cell batteries.

IC Role / Device Role / Timing Role: Low-leakage data store maintaining integrity during 95% duty-cycle sleep periods between periodic sensor reads.

Use Value: 2.5 µA typical standby current extends battery life beyond 18 months; data retention at 1.5 V guarantees safety-critical log persistence during power loss.

Smart Energy Meter Automotive Telematics Gateway

Use Scenario: Holding tariff tables, consumption history, and firmware update staging buffers in ANSI C12.22-compliant electricity meters.

IC Role / Device Role / Timing Role: Nonvolatile-supporting volatile memory used alongside FRAM for rapid write-intensive logging.

Use Value: Byte-enable capability allows atomic updates to individual tariff zones without corrupting adjacent billing records.

Use Scenario: Temporary storage of CAN FD message queues and OTA update fragments in vehicle infotainment gateways.

IC Role / Device Role / Timing Role: High-speed scratchpad memory interfacing directly with automotive-grade MCU's external bus interface.

Use Value: TSOP II package meets AEC-Q200 vibration requirements; –40°C to +85°C rating ensures reliability under hood-adjacent mounting.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS62WV25616BLL-45NLI Same density, speed, and TSOP II package; 2.7–3.6 V only; higher ISB (15 µA max); no 4.5–5.5 V support Limited to 3.3 V systems; unsuitable for mixed-voltage or legacy 5 V designs Select when cost sensitivity outweighs voltage flexibility and ultra-low standby is noncritical
Renesas R1LV25616ASB-45SI 45 ns, 256K × 16, TSOP II; 2.2–3.6 V only; ISB = 10 µA max; supports data retention down to 1.2 V Better data retention voltage margin but lacks 5 V compatibility and MoBL®-grade standby efficiency Prefer for ultra-low-VCC retention-critical applications where 5 V operation is unnecessary

Compared with IS62WV25616BLL-45NLI and R1LV25616ASB-45SI, the CY62146ESL-45ZSXI uniquely delivers dual-voltage operation *and* sub-7 µA standby in one industrial-grade TSOP II package - eliminating voltage translation or power-gating circuitry in cross-platform designs.

Availability

CY62146ESL-45ZSXI is available at Aetrix Electronics and suitable for industrial PLC I/O modules, portable medical monitors, and smart energy meters requiring stable component supply across extended temperature and dual-voltage environments.

Supply support for CY62146ESL-45ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and memory solutions for industrial, automotive, and IoT applications.

CY62146ESL belongs to Infineon's MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power portable and battery-constrained embedded systems requiring reliable, fast-access volatile memory without voltage translation.

FAQ

What is the minimum VCC required to retain data in CY62146ESL-45ZSXI?

The device guarantees data retention at VCC ≥ 1.5 V, as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤8.8 µA, allowing indefinite retention when CE is HIGH and inputs are held at valid logic levels. This enables safe operation during brown-out conditions or backup-supply handover.

Can CY62146ESL-45ZSXI operate reliably at 3.3 V and 5 V on the same PCB?

Yes - the device is explicitly rated for both 2.2–3.6 V and 4.5–5.5 V operation, with no intermediate voltage gap. It does not operate between 3.6 V and 4.5 V, so system design must avoid that range. This dual-range support eliminates need for separate 3.3 V and 5 V SRAM SKUs in mixed-voltage boards.

How does automatic power-down activate, and what signals must be controlled?

Automatic power-down engages when CE is driven HIGH at CMOS level (≥VCC – 0.2 V) and all address/data inputs are stable (no toggling). OE, WE, BHE, and BLE may float or be held static. No additional control logic is needed - the feature is fully internal and reduces ICC to ≤7 µA without external intervention.

Is the TSOP II package of CY62146ESL-45ZSXI compatible with standard reflow profiles?

Yes - the lead-free TSOP II package complies with JEDEC J-STD-020D moisture sensitivity level 3 and supports standard Pb-free reflow profiles (peak 260°C, 20–40 sec above 217°C). Thermal resistance values (θJA = 57.92°C/W) are validated on a 4-layer PCB, confirming suitability for automated SMT assembly.

CY62146ESL-45ZSXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
MOBL™
Package/Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
2.2V ~ 3.6V, 4.5V ~ 5.5V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP II

CY62146ESL-45ZSXI FAQ

1.How can I place an order for CY62146ESL-45ZSXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62146ESL-45ZSXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62146ESL-45ZSXI reliable?

The price and inventory of CY62146ESL-45ZSXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62146ESL-45ZSXI is usually 5 days.

3.What payment methods are accepted for CY62146ESL-45ZSXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62146ESL-45ZSXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62146ESL-45ZSXI?

CY62146ESL-45ZSXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62146ESL-45ZSXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62146ESL-45ZSXI?

For technical support, including CY62146ESL-45ZSXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62146ESL-45ZSXI requirements.

6.How does Aetrix verify that CY62146ESL-45ZSXI is sourced from the original manufacturer or authorized distributors?

All CY62146ESL-45ZSXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62146ESL-45ZSXI meets industry standards.

7.What is the process for return or replacement of CY62146ESL-45ZSXI?

All CY62146ESL-45ZSXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62146ESL-45ZSXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62146ESL-45ZSXI part is unused and in its original packaging.

Return procedure for CY62146ESL-45ZSXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY62146ESL-45ZSXI Tags

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