Infineon Technologies CY62146EV30LL-45BVXI

Overview

CY62146EV30LL-45BVXI from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16) CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and industrial/automotive-A temperature rating (–40 °C to +85 °C). It delivers ultra-low active current (3.5 mA at 1 MHz) and standby current (2.5 µA typical), supporting battery-sensitive portable electronics via MoBL® architecture.

For engineers reviewing the CY62146EV30LL-45BVXI datasheet, CY62146EV30LL-45BVXI pinout, CY62146EV30LL-45BVXI application, or CY62146EV30LL-45BVXI equivalent, key selection criteria include VFBGA-48 package compatibility, byte-enable-controlled 16-bit data access, automatic CE power-down behavior, and guaranteed 45 ns read/write timing across full voltage and temperature range.

Technical Context

This SRAM implements a synchronous, non-volatile-retentive memory array organized as 256K words × 16 bits, with independent Byte High Enable (BHE) and Byte Low Enable (BLE) for selective 8-bit writes. Its CMOS design enables deterministic timing-tRC = 45 ns, tAA = 45 ns, tDOE = 22 ns-with all AC parameters specified over –40 °C to +85 °C and 2.2–3.6 V.

The device supports three low-power states: active (ICC = 3.5 mA typ @ 1 MHz), automatic CE power-down (ISB1 = 2.5 µA typ), and full standby (ISB2 = 2.5 µA typ), triggered by CE HIGH and stable address bus. Input/output pins enter high-impedance state during deselection, OE HIGH, BHE/ BLE HIGH, or write cycles.

Key Specifications

Pinout & Package

Package: 48-ball Very Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IS62WV25616BLL-45NLI and NVTFS25616L-45G, CY62146EV30LL-45BVXI uniquely balances ultra-wide voltage operation (2.2–3.6 V), industry-leading 2.5 µA standby, and compact VFBGA-48 packaging-making it optimal for space- and battery-constrained portable and automotive edge nodes where true volatility is acceptable.

Availability

CY62146EV30LL-45BVXI is available at Aetrix Electronics and suitable for portable medical sensors, automotive body control modules, industrial PLC I/O expansion cards, and smart energy meter data buffers requiring stable component supply across long production lifecycles.

Supply support for CY62146EV30LL-45BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, delivering power management, sensing, connectivity, and security solutions for industrial, automotive, and IoT markets.

CY62146EV30LL-45BVXI belongs to Infineon's MoBL® (More Battery Life) SRAM product line, engineered specifically for ultra-low-power, high-speed volatile memory in portable and energy-sensitive embedded systems.

FAQ

What is the maximum clock frequency supported for read/write operations?

The CY62146EV30LL-45BVXI does not operate on a clock signal-it is an asynchronous SRAM. Its 45 ns access time supports reliable operation with microcontrollers or FPGAs generating address/strobe sequences at up to ~22 MHz effective bus rate. Timing margins depend on PCB trace length, loading, and VCC stability-not internal clocking.

Can BHE and BLE be tied permanently to logic HIGH or LOW?

Yes-BHE and BLE may be hardwired to VCC or GND depending on system needs. Tying BLE LOW enables only lower-byte writes; tying both HIGH disables all writes. However, doing so forfeits byte-select flexibility and may increase unnecessary power draw if unused pins float. Pull-up/down resistors are recommended for unused enables.

Does this part support data retention during complete power removal?

No-CY62146EV30LL-45BVXI is a volatile SRAM and loses all data when VCC drops below 1.5 V or is removed entirely. It supports data retention only during brown-out conditions (VCC ≥ 1.5 V) with CE HIGH, consuming ≤8.8 µA. For non-volatile storage, external EEPROM or battery-backed SRAM is required.

Is the VFBGA-48 package lead-free and RoHS compliant?

Yes-the CY62146EV30LL-45BVXI in the "BVXI" suffix is explicitly Pb-free and RoHS-compliant per Infineon's documentation. The package uses matte tin surface finish on solder balls and meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL-3), requiring bake conditioning before reflow if exposed to ambient >12 months.