Infineon Technologies CY62146EV30LL-45BVXIT

Overview

CY62146EV30LL-45BVXIT from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16) CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and industrial/automotive-A temperature rating (–40 °C to +85 °C). It delivers ultra-low active current (3.5 mA at 1 MHz) and standby current (2.5 µA typical), housed in a Pb-free 48-ball VFBGA package for space-constrained portable memory applications.

For engineers reviewing the CY62146EV30LL-45BVXIT datasheet, CY62146EV30LL-45BVXIT pinout, CY62146EV30LL-45BVXIT application, or CY62146EV30LL-45BVXIT equivalent, key selection criteria include MoBL® low-power operation, byte-wide I/O control via BHE/ BLE, automatic CE power-down, high-impedance output management during deselect, and compatibility with 256K × 16 memory expansion architectures.

Technical Context

The device implements a full CMOS SRAM architecture with independent byte enable (BHE/BLE) control, enabling selective 8-bit writes to upper or lower data bytes without affecting adjacent bits. Its automatic power-down logic reduces current by >99% when CE is HIGH, and it maintains data retention down to 1.5 V with ICCDR ≤ 8.8 µA.

All timing parameters are specified under strict AC test conditions: 1 V/ns signal edge rate, VCC/2 timing reference, and 30 pF load. The 45 ns read cycle (tRC) includes guaranteed tAA (address-to-data valid), tDOE (OE-to-output valid), and tHZOE (OE HIGH-to-High-Z) values - critical for synchronous bus interfacing in embedded controllers and baseband processors.

Key Specifications

Pinout & Package

Package: 48-ball very fine-pitch ball grid array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, Pb-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 256K × 16 SRAM applications.

Compared with IS62WV25616BLL-45NLI and R1EX24064ASAS0I#U0, CY62146EV30LL-45BVXIT uniquely combines VFBGA miniaturization, 45 ns speed, sub-7 µA standby, and automotive qualification-making it optimal for next-gen portable and safety-aware embedded systems where footprint, power, and reliability are co-constrained.

Availability

CY62146EV30LL-45BVXIT is available at Aetrix Electronics and suitable for cellular baseband processing, automotive infotainment display buffering, and industrial PLC data logging requiring stable component supply across extended product lifecycles.

Supply support for CY62146EV30LL-45BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and security solutions for automotive, industrial, and IoT markets.

CY62146EV30LL-45BVXIT belongs to Infineon's MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power, high-reliability memory in battery-operated and thermally demanding embedded systems.

FAQ

Is CY62146EV30LL-45BVXIT pin-compatible with CY62146DV30?

Yes, CY62146EV30LL-45BVXIT is explicitly pin-compatible with CY62146DV30 per the Cypress datasheet Rev. *O. Both share identical 48-ball VFBGA pinout, signal naming, and functional mapping-including CE, OE, WE, BHE, BLE, and I/O0–I/O15 assignments-enabling drop-in replacement without PCB redesign.

What is the maximum clock frequency supported for burst reads?

The device does not support synchronous clocked burst reads; it is an asynchronous SRAM. Maximum effective throughput is determined by tRC = 45 ns, yielding up to ~22.2 MHz random-access bandwidth. For sustained sequential access, system-level timing must respect tAA (45 ns), tOHA (10 ns), and tHZOE (18 ns) to avoid bus contention.

Can BHE and BLE be tied permanently LOW for full 16-bit operation?

Yes. Tying both BHE and BLE LOW enables full 16-bit data path operation, identical to standard SRAM behavior. This configuration disables byte-select functionality but simplifies interface logic and maintains full timing compliance per the datasheet truth table for simultaneous high/low byte access.

Does the VFBGA package require special PCB layout considerations?

Yes. The 0.5 mm pitch 48-ball VFBGA demands controlled impedance routing, thermal vias under the pad array, and solder mask defined pads per IPC-7351B. Ball A1 (VSS) and Ball C1 (VCC) must be decoupled with 100 nF X7R ceramics within 3 mm, and signal traces should avoid stubs longer than 5 mm to preserve 45 ns timing integrity.