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Infineon Technologies CY62146EV30LL-45ZSXI
- Part No.:
- CY62146EV30LL-45ZSXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY62146EV30LL-45ZSXI.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:2,040
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Product details
Overview
CY62146EV30LL-45ZSXI from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16) CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and industrial/automotive-A temperature rating (–40 °C to +85 °C). It features ultra-low standby current (7 µA max), automatic CE power-down mode, and byte-wide I/O control via BHE/ BLE for embedded memory expansion in portable and automotive systems.
For engineers reviewing the CY62146EV30LL-45ZSXI datasheet, CY62146EV30LL-45ZSXI pinout, CY62146EV30LL-45ZSXI application, or CY62146EV30LL-45ZSXI equivalent, key selection criteria include its VFBGA-48 package compatibility, MoBL® low-power architecture, 256K × 16 organization, and dual-byte enable support for flexible data bus interfacing in space-constrained designs.
Technical Context
The device implements a fully static CMOS SRAM array with independent byte enable (BHE/BLE) control, enabling selective 8-bit writes to high or low byte lanes without affecting adjacent data. Its automatic CE power-down logic reduces current by >99% when CE is HIGH, and it maintains data retention down to 1.5 V with ICCDR ≤ 8.8 µA.
All timing parameters-including tRC = 45 ns, tAA = 45 ns, and tDOE = 22 ns-are specified over full voltage (2.2–3.6 V) and temperature (–40 °C to +85 °C) ranges. Input/output levels comply with CMOS thresholds, and tri-state transitions (e.g., tHZOE ≤ 18 ns) ensure clean bus sharing in multi-device systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K words × 16 bits - supports 32-bit microcontroller interfaces with byte-select capability |
| Access Time | 45 ns - enables direct connection to 22 MHz synchronous buses without wait states |
| Supply Voltage Range | 2.20 V to 3.60 V - compatible with single-supply 2.5 V or 3.3 V system rails |
| Standby Current (ISB2) | 7 µA max at 3.6 V - extends battery life in always-on monitoring modules |
| Operating Current (ICC) | 20 mA max at fmax - scales linearly with frequency; 3.5 mA typical at 1 MHz for low-duty-cycle operation |
| Data Retention Voltage | 1.5 V min - allows graceful shutdown and backup during brown-out conditions |
| Temperature Range | –40 °C to +85 °C - qualified for under-hood automotive and industrial control environments |
Pinout & Package
Package: 48-ball Very Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant, lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting 256K-word addressing; A16/A17 used for higher-density variants but NC on this 4-Mbit part |
| I/O0–I/O7 | Low-Byte Data I/O | Bidirectional 8-bit data path enabled only when BLE = LOW; high-impedance when deselected or during write |
| I/O8–I/O15 | High-Byte Data I/O | Bidirectional 8-bit data path enabled only when BHE = LOW; isolated from low-byte lane for independent access |
| CE | Chip Enable | Active-LOW global enable; forces automatic power-down and high-Z I/O when HIGH |
| OE | Output Enable | Active-LOW read strobe; disables outputs (high-Z) when HIGH, regardless of CE state |
| WE | Write Enable | Active-LOW write strobe; initiates write cycle when CE and WE both LOW |
| BHE / BLE | Byte High/Low Enable | Independent active-LOW enables for 16-bit data partitioning; allows partial writes without read-modify-write |
| VCC / VSS | Power / Ground | Dual VCC balls (pins E1, F1) and dual VSS balls (pins D1, G1) reduce IR drop and improve noise immunity |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | 2.5 µA typical ISB2 enables >10-year coin-cell operation in tamper-detection or event-logging circuits |
| Byte-Selectable Write Control | Independent BHE/BLE pins eliminate need for external logic to manage 8-bit peripheral writes on 16-bit buses |
| Automatic CE Power-Down | Reduces active current by 80% when address lines are static-critical for intermittent sensor sampling systems |
| CMOS-Compatible Timing | All AC specs guaranteed across 2.2–3.6 V and –40 °C to +85 °C-no derating required for wide-input-voltage designs |
| VFBGA-48 Space Optimization | 6 mm × 8 mm footprint saves >40% board area vs. TSOP II; supports fine-pitch routing in compact IoT edge nodes |
Applications
| Automotive Body Control Module | Industrial PLC Data Buffer |
|---|---|
|
Use Scenario: Storing real-time CAN message history and fault logs in door module ECUs with limited PCB space and 3.3 V supply. IC Role / Device Role / Timing Role: Nonvolatile shadow buffer holding last 512 frames before flash write; accessed at 22 MHz burst rate during diagnostic sessions. Use Value: 45 ns tRC eliminates wait states on Cortex-M4 bus; 7 µA ISB2 extends sleep-mode battery life beyond 15 years per ISO 16750-4. |
Use Scenario: Temporary storage for analog input scan results in modular I/O base units operating in harsh factory environments. IC Role / Device Role / Timing Role: Dual-port accessible SRAM staging raw ADC samples prior to Ethernet packetization; synchronized to 10 MHz SPI master clock. Use Value: BHE/BLE enables simultaneous 8-bit analog channel updates without corrupting status registers; –40 °C to +85 °C rating ensures reliability near motor drives. |
| Portable Medical Monitor | Smart Energy Meter RAM Cache |
|
Use Scenario: Holding waveform buffers and calibration coefficients in handheld ECG devices powered by single Li-ion cells. IC Role / Device Role / Timing Role: Primary working memory for ARM Cortex-M0+ processor; retains critical patient data during battery swaps. Use Value: 1.5 V data retention threshold allows safe suspend-to-RAM during 2.8 V brown-out; VFBGA-48 fits within 12 mm × 12 mm medical enclosure footprint. |
Use Scenario: Caching tariff tables and consumption deltas in DIN-rail mounted meters with 10-year battery-backed operation. IC Role / Device Role / Timing Role: Low-leakage scratchpad memory storing rolling 15-minute kWh integrals; refreshed only during zero-crossing intervals. Use Value: 2.5 µA typical ISB2 reduces annual battery drain to <0.25 mAh; pin compatibility with CY62146DV30 simplifies legacy design refreshes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS62WV25616BLL-45NLI | 45 ns access, same 256K × 16 organization, but 3.3 V only (3.0–3.6 V); no 2.2 V support | Lacks ultra-low 2.2 V operation needed for wide-input-voltage battery systems | Select when system uses regulated 3.3 V rail and requires lower cost; verify BHE/BLE timing alignment |
| AS6C4008-45TIN | 45 ns, 256K × 16, 2.7–3.6 V range; higher ISB2 (15 µA max); TSOP II only (no VFBGA) | No VFBGA option limits use in space-constrained portable designs | Choose for cost-sensitive industrial controls where PCB area is not constrained and 3.3 V supply is stable |
Compared with IS62WV25616BLL-45NLI and AS6C4008-45TIN, CY62146EV30LL-45ZSXI uniquely supports 2.2 V operation and offers VFBGA packaging-enabling longer battery life and smaller footprints in portable and automotive applications where voltage headroom and board space are critical.
Availability
CY62146EV30LL-45ZSXI is available at Aetrix Electronics and suitable for automotive body control modules, industrial PLC data buffers, portable medical monitors, and smart energy meter RAM caches requiring stable component supply across extended temperature and voltage ranges.
Supply support for CY62146EV30LL-45ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and memory solutions with strong industrial and automotive qualifications.
This device belongs to the MoBL® (More Battery Life™) Static RAM product line, engineered specifically for ultra-low-power, battery-operated embedded systems where extended runtime and small form factor are essential design constraints.
FAQ
What is the maximum clock frequency supported for burst reads?
The CY62146EV30LL-45ZSXI does not use a clock; it is an asynchronous SRAM. Maximum effective interface speed is determined by tRC = 45 ns, permitting up to ~22.2 MHz continuous read cycles. No internal clock circuitry exists-timing depends solely on external address and control signal edges meeting setup/hold requirements.
Can BHE and BLE be tied together for 16-bit operation?
Yes-BHE and BLE may be connected to the same controller signal to enable full 16-bit data transfers. When both are LOW, all I/O0–I/O15 become active. This configuration is electrically valid and commonly used in microcontroller interfaces lacking separate byte enable outputs.
Is the VFBGA-48 package moisture-sensitive, and what is its MSL rating?
Yes-the CY62146EV30LL-45ZSXI in VFBGA-48 packaging carries Moisture Sensitivity Level 3 (MSL 3) per J-STD-020. It requires floor life of 168 hours at ≤30 °C/60% RH and must be baked per JEDEC standards if exposed beyond that limit before reflow soldering.
Does the device retain data during brief VCC interruptions?
Yes-data retention is guaranteed down to VCC = 1.5 V with ICCDR ≤ 8.8 µA. If VCC drops below 1.5 V, data is not assured. For brown-out resilience, system designers should implement hold-up capacitors sized to maintain ≥1.5 V for ≥100 µs during power transients.
CY62146EV30LL-45ZSXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY62146EV30LL-45ZSXI FAQ
1.How can I place an order for CY62146EV30LL-45ZSXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62146EV30LL-45ZSXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62146EV30LL-45ZSXI reliable?
The price and inventory of CY62146EV30LL-45ZSXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62146EV30LL-45ZSXI is usually 5 days.
3.What payment methods are accepted for CY62146EV30LL-45ZSXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62146EV30LL-45ZSXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62146EV30LL-45ZSXI?
CY62146EV30LL-45ZSXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62146EV30LL-45ZSXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62146EV30LL-45ZSXI?
For technical support, including CY62146EV30LL-45ZSXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62146EV30LL-45ZSXI requirements.
6.How does Aetrix verify that CY62146EV30LL-45ZSXI is sourced from the original manufacturer or authorized distributors?
All CY62146EV30LL-45ZSXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62146EV30LL-45ZSXI meets industry standards.
7.What is the process for return or replacement of CY62146EV30LL-45ZSXI?
All CY62146EV30LL-45ZSXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62146EV30LL-45ZSXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62146EV30LL-45ZSXI part is unused and in its original packaging.
Return procedure for CY62146EV30LL-45ZSXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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