Infineon Technologies CY62146EV30LL-45ZSXIT

Overview

CY62146EV30LL-45ZSXIT from Infineon Technologies (formerly Cypress) is a 4-Mbit (256K × 16) CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and industrial/automotive-A temperature rating (–40 °C to +85 °C). It delivers ultra-low active current (3.5 mA at 1 MHz) and standby current (2.5 µA typical), supporting battery-sensitive portable electronics via automatic CE power-down and MoBL® architecture.

For engineers reviewing the CY62146EV30LL-45ZSXIT datasheet, CY62146EV30LL-45ZSXIT pinout, CY62146EV30LL-45ZSXIT application, or CY62146EV30LL-45ZSXIT equivalent, key selection criteria include VFBGA-48 package compatibility, byte-enable (BHE/ BLE) control for 16-bit data partitioning, data retention at 1.5 V, and tri-state timing parameters (tHZOE ≤ 18 ns, tLZCE ≤ 10 ns).

Technical Context

The device implements a full CMOS SRAM array with independent byte enable logic for high- and low-byte access (I/O0–I/O7 and I/O8–I/O15), enabling efficient 8-bit subsystem interfacing without external demultiplexing. Address decoding covers A0–A17 (256K words), with NC pins reserved for future density expansion (8 Mb/16 Mb/32 Mb).

Power management relies on dual-tier deselection: CE HIGH forces automatic power-down (ISB2 = 7 µA max), while stable address inactivity further reduces consumption by ~80%. Output drivers enter high-impedance state under four conditions-CE HIGH, OE HIGH, BHE/ BLE HIGH, or WE LOW during write-ensuring clean bus sharing.

Key Specifications

Pinout & Package

Package: 48-ball Very Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 4-Mbit SRAM applications.

Compared with IS62WV25616BLL-45NLI and R1LV25616ASB-45SI, CY62146EV30LL-45ZSXIT uniquely combines automotive-A qualification, lowest standby current (2.5 µA), and native VFBGA-48 packaging-making it optimal for next-gen battery-powered automotive and portable medical designs demanding minimal footprint and maximum energy efficiency.

Availability

CY62146EV30LL-45ZSXIT is available at Aetrix Electronics and suitable for portable medical monitors, automotive body control modules, industrial PLC I/O expansion cards, and wireless sensor node gateways requiring stable component supply across extended product lifecycles.

Supply support for CY62146EV30LL-45ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-performance memory portfolio, emphasizing reliability, low-power innovation, and automotive-grade quality systems.

This device belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for energy-constrained portable and automotive applications where nanosecond-speed access must coexist with microamp-level quiescent current.

FAQ

What is the maximum clock frequency supported for reliable read/write operations?

The CY62146EV30LL-45ZSXIT has a 45 ns access time, meaning it supports sustained bus frequencies up to approximately 22 MHz for read cycles (tRC = 45 ns) and 22 MHz for write cycles (tWC = 45 ns). Real-world maximum frequency depends on system-level timing margins, PCB trace length, and load capacitance-designers should verify setup/hold times (e.g., tSD = 25 ns, tHA = 0 ns) against their controller's drive strength and signal integrity.

Can BHE and BLE be tied permanently to logic LOW for full 16-bit operation?

Yes-tying both BHE and BLE LOW enables simultaneous access to all 16 data bits (I/O0–I/O15) during reads and writes, effectively operating the device as a standard 256K × 16 SRAM. This configuration eliminates byte masking but retains full functionality; note that unused byte-enable pins must still be terminated to valid CMOS levels (VCC or GND) to meet ISB2 leakage specifications.

Does the device require an external power-on reset circuit for reliable initialization?

No external POR circuit is required. The device enters a known high-impedance state on power-up when CE is HIGH, and internal power sequencing ensures stable operation after VCC reaches 2.2 V with ≥100 µs ramp time. However, system-level reset coordination is recommended to prevent spurious writes during MCU boot-asserting CE HIGH until firmware initializes the memory interface is sufficient.

How does the automatic power-down feature interact with address stability requirements?

Automatic power-down activates when address lines remain static for one full cycle (tRC = 45 ns) while CE is HIGH. If addresses toggle faster than this threshold-even briefly-the device remains in active mode. This behavior prevents unintended power-state transitions during burst accesses; designers must ensure address hold time exceeds 45 ns during intentional idle periods to achieve the 2.5 µA standby current.