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Infineon Technologies CY62146G30-45BVXI

Part No.:
CY62146G30-45BVXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-VFBGA
Datasheet:
AetrixCY62146G30-45BVXI.pdf
Description:
IC SRAM 4MBIT PARALLEL 48VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,864

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Product details

Overview

CY62146G30-45BVXI from Cypress Semiconductor is a 4-Mbit (256K × 16) MoBL® Static RAM with embedded single-bit error-correcting code (ECC), operating at 45 ns access time across 2.2–3.6 V supply, featuring ERR output pin, ultra-low 3.5 µA typical standby current, and TTL-compatible I/Os for industrial memory subsystems in medical instrumentation and avionics data loggers.

For engineers reviewing the CY62146G30-45BVXI datasheet, CY62146G30-45BVXI pinout, CY62146G30-45BVXI application, or CY62146G30-45BVXI equivalent, key selection criteria include ECC-enabled reliability, dual-chip-enable support, 48-ball VFBGA package compatibility, and voltage-flexible operation across 2.2–3.6 V rails with guaranteed 45 ns timing.

Technical Context

This SRAM integrates on-die ECC encoding/decoding logic that detects and corrects single-bit errors during read cycles, signaled via dedicated ERR output. It supports both single-CE (CE active low) and dual-CE (CE1 low + CE2 high) addressing modes, enabling flexible memory mapping in multi-bank systems.

The device implements byte-level write control via BHE (I/O8–I/O15) and BLE (I/O0–I/O7), maintains 1.0-V data retention at VCC = 0 V, and operates across three discrete voltage ranges - 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V - with full AC/DC specs validated only in the 2.2–3.6 V and 4.5–5.5 V bands.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density4 Mbit (256K words × 16 bits) - provides 512 KB of parallel-access data storage with word-wide I/O interface
Access Time45 ns - guarantees maximum read latency under 2.2–3.6 V operation at industrial temperature range (–40°C to +85°C)
Supply Voltage Range2.2 V to 3.6 V - fully specified and tested; no guaranteed performance between 3.6 V and 4.5 V
Standby CurrentTypical 3.5 µA / Max 8.7 µA - enables battery-backed operation in low-power hold states without external power gating
ECC FunctionSingle-bit error correction with ERR output assertion - corrects soft errors in real time and signals correction event for system logging
Package48-ball Very Fine Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch - supports high-density PCB layouts with thermal and signal integrity advantages over TSOP
I/O InterfaceTTL-compatible inputs/outputs - ensures direct interfacing with legacy microcontrollers and FPGAs without level-shifting circuitry

Pinout & Package

48-ball VFBGA (6 mm × 8 mm, 0.5 mm pitch), RoHS-compliant, industrial-grade packaging with exposed thermal pad (not electrically connected). Pinout corresponds to CY62146GE dual-CE configuration with ERR output.

Pin/TerminalCircuit RoleDesign Meaning
A0–A17Address Inputs18-bit address bus supporting full 256K-word addressing; A12–A17 used for row/column decoding
I/O0–I/O15Bidirectional Data Bus16-bit parallel data path; I/O0–I/O7 controlled by BLE, I/O8–I/O15 controlled by BHE
CE1, CE2Dual Chip Enable InputsActive-low CE1 and active-high CE2 enable memory access only when CE1 = LOW and CE2 = HIGH
WEWrite Enable InputActive-low signal initiating write cycle; latches data on rising edge of WE when OE is inactive
OEOutput Enable InputActive-low signal enabling read data output onto I/O lines; places I/Os in HI-Z when deasserted
BLE, BHEByte Enable InputsBLE controls lower byte (I/O0–I/O7); BHE controls upper byte (I/O8–I/O15); both required for full-word writes
ERRError Indication OutputOpen-drain output asserted HIGH during single-bit error detection/correction; requires external pull-up
VCC, VSSPower Supply PinsVCC supplies core and I/O; two VSS pins provide dedicated ground return paths for analog and digital domains

Key Features

FeatureDesign Value
Embedded ECC engineOn-die hardware encoder/decoder corrects single-bit errors per 16-bit word without CPU intervention or firmware overhead
Ultra-low ISB2 standby currentMax 8.7 µA at +85°C ensures >10-year battery life in always-on backup memory applications
Voltage-flexible operationFully characterized across 2.2–3.6 V and 4.5–5.5 V rails - eliminates need for separate 3.3 V and 5 V memory families
1.0-V data retentionMaintains stored data with VCC = 0 V down to –40°C, enabling true zero-power hold mode during system sleep
ERR output signalingDedicated open-drain pin reports correction events in real time, enabling system-level error logging and fault mitigation

Applications

Avionics Data LoggerMedical Diagnostic Imaging Buffer

Use Scenario: Continuous acquisition of flight sensor telemetry with long-term nonvolatile storage requirements.

IC Role / Device Role / Timing Role: Primary volatile buffer holding pre-processed sensor frames before ECC-protected transfer to flash.

Use Value: 45 ns access time enables real-time frame capture at 22 MHz bus rates; embedded ECC prevents silent data corruption in radiation-prone environments.

Use Scenario: Temporary storage of DICOM image tiles during CT/MRI reconstruction pipeline.

IC Role / Device Role / Timing Role: High-bandwidth scratchpad memory interfaced directly to FPGA-based image processor.

Use Value: 16-bit bus width and TTL compatibility simplify FPGA pinout; 3.5 µA standby current reduces thermal load in sealed diagnostic enclosures.

Industrial PLC Configuration MemoryRailway Signaling Controller Cache

Use Scenario: Storing runtime-configurable logic parameters and I/O mapping tables subject to EMI in factory-floor environments.

IC Role / Device Role / Timing Role: Dual-CE-configured SRAM partitioned into mirrored banks for hot-swappable configuration updates.

Use Value: ERR pin allows PLC firmware to log bit-flip events for predictive maintenance; wide voltage range tolerates brownout conditions.

Use Scenario: Caching safety-critical interlocking logic state in EN 5012x-certified signaling hardware.

IC Role / Device Role / Timing Role: ECC-protected working memory for SIL-4 decision engine executing cyclic redundancy checks.

Use Value: Single-bit correction meets IEC 61508 hardware fault tolerance requirements; 1.0-V data retention supports fail-safe shutdown sequences.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IS61WV25616EDBLL-10MLINo integrated ECC; requires external error-handling logic; 10 ns faster (10 ns access), but higher 25 mA ICCLacks hardware-level error reporting; suitable where ECC is implemented in FPGA or host processorSelect when speed > reliability and system-level ECC is already architected
AS6C4008-55ZIN4-Mbit × 8-bit organization; no ERR pin; 55 ns access; 2.7–3.6 V only; no data retention below 2.7 VRequires two devices for 16-bit bus width; no single-bit correction capabilitySelect only for cost-sensitive, non-safety-critical 8-bit bus systems without ECC requirements

Compared with IS61WV25616EDBLL-10MLI and AS6C4008-55ZIN, CY62146G30-45BVXI uniquely delivers on-die ECC with real-time ERR signaling, 2.2–3.6 V operation, and 1.0-V data retention - making it the sole choice for safety-aware, low-voltage, single-chip ECC memory designs.

Availability

CY62146G30-45BVXI is available at Aetrix Electronics and suitable for avionics data loggers, medical diagnostic imaging buffers, and industrial PLC configuration memory requiring stable component supply across extended temperature and voltage ranges.

Supply support for CY62146G30-45BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and aerospace applications, with emphasis on low-power, radiation-tolerant, and functional-safety architectures.

CY62146G series belongs to Cypress's MoBL® (Mobile Binary Logic) SRAM product line, engineered specifically for battery-powered and mission-critical systems demanding ECC protection, ultra-low standby power, and multi-voltage interoperability.

FAQ

Does CY62146G30-45BVXI support automatic write-back after error correction?

No. The device performs single-bit error correction during read cycles but does not automatically rewrite the corrected data back to the memory array. System firmware must initiate a write cycle to update the corrected word if permanent repair is required. This behavior is explicitly documented in Note 2 of the datasheet.

What is the function of the ERR pin, and how is it electrically driven?

The ERR pin is an open-drain output that asserts HIGH during detection and correction of a single-bit error in the accessed 16-bit word. It requires an external pull-up resistor (typically 4.7 kΩ to VCC) and remains inactive (HIGH-Z) when no error is present. Its timing aligns with the end of the read access cycle.

Can CY62146G30-45BVXI operate reliably at 3.3 V?

Yes. The 2.2–3.6 V VCC range is fully specified and tested at 3.3 V. All AC/DC parameters - including 45 ns access time, 3.5 µA standby current, and ECC functionality - are guaranteed at this voltage. Operation between 3.6 V and 4.5 V is not characterized.

Is the 48-ball VFBGA package lead-free and RoHS-compliant?

Yes. The "X" suffix in CY62146G30-45BVXI denotes lead-free (Pb-free) construction, and the device complies with RoHS Directive 2011/65/EU. The package uses matte tin surface finish on solder balls and meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL-3) requirements.

CY62146G30-45BVXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
MOBL™
Package/Case:
48-VFBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
2.2V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-VFBGA (6x8)

CY62146G30-45BVXI FAQ

1.How can I place an order for CY62146G30-45BVXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62146G30-45BVXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62146G30-45BVXI reliable?

The price and inventory of CY62146G30-45BVXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62146G30-45BVXI is usually 5 days.

3.What payment methods are accepted for CY62146G30-45BVXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62146G30-45BVXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62146G30-45BVXI?

CY62146G30-45BVXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62146G30-45BVXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62146G30-45BVXI?

For technical support, including CY62146G30-45BVXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62146G30-45BVXI requirements.

6.How does Aetrix verify that CY62146G30-45BVXI is sourced from the original manufacturer or authorized distributors?

All CY62146G30-45BVXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62146G30-45BVXI meets industry standards.

7.What is the process for return or replacement of CY62146G30-45BVXI?

All CY62146G30-45BVXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62146G30-45BVXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62146G30-45BVXI part is unused and in its original packaging.

Return procedure for CY62146G30-45BVXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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