Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY62146G30-45BVXIT

Part No.:
CY62146G30-45BVXIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-VFBGA
Datasheet:
AetrixCY62146G30-45BVXIT.pdf
Description:
IC SRAM 4MBIT PARALLEL 48VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,997

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY62146G30-45BVXIT from Cypress Semiconductor is a 4-Mbit (256K × 16) MoBL® Static RAM with embedded single-bit error-correcting code (ECC), operating at 45 ns access time over 2.2–3.6 V supply, featuring ERR output pin for real-time error indication and ultra-low 3.5 µA typical standby current. It is used in industrial control modules requiring data integrity under extended temperature cycling.

For engineers reviewing the CY62146G30-45BVXIT datasheet, CY62146G30-45BVXIT pinout, CY62146G30-45BVXIT application, or CY62146G30-45BVXIT equivalent, this page delivers verified package mapping (48-ball VFBGA), ECC correction behavior, byte-enable write control (BHE/ BLE), TTL-compatible I/O timing, and dual/single CE configuration support - all confirmed from Cypress Document 001-95420 Rev. *E.

Technical Context

This SRAM implements on-die ECC encoding/decoding logic that detects and corrects single-bit errors during read cycles, signaled via the dedicated ERR output pin asserted HIGH. Its memory array uses standard CMOS architecture with row/column decoding across A0–A17 address lines and I/O0–I/O15 bidirectional data bus.

It supports two chip enable modes: single CE (CE active LOW) or dual CE (CE1 LOW + CE2 HIGH), with independent byte write control via BHE (I/O8–I/O15) and BLE (I/O0–I/O7). All I/Os enter HI-Z state when deselected or during OE/BLE/BHE deassertion.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 4 Mbit (256K words × 16 bits); enables 512 KB of word-aligned storage without external data-width expansion.
Access Time 45 ns max at VCC = 2.2–3.6 V; ensures compatibility with 22.22 MHz synchronous bus timing.
Supply Voltage Range 2.2 V to 3.6 V; supports modern low-voltage microcontroller interfaces while maintaining full functionality.
Standby Current Typical 3.5 µA; allows battery-backed operation for >1 year in always-on industrial logging systems.
ECC Function Single-bit error detection and correction per read cycle; reduces uncorrectable memory failures in mission-critical firmware storage.
Output Signal ERR pin asserts HIGH during correction event; enables host MCU to log or flag memory integrity events without polling.
Package 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA); provides compact footprint and thermal performance for space-constrained PCBs.

Pinout & Package

Package: 48-ball VFBGA (5.0 mm × 5.0 mm × 0.75 mm), RoHS-compliant, ball pitch 0.5 mm.

Pin/Terminal Circuit Role Design Meaning
A0–A17 Address Inputs 18-bit address bus supporting full 256K-word addressing; A12–A17 used for row selection, A0–A11 for column decoding.
I/O0–I/O15 Bidirectional Data Bus 16-bit parallel interface; supports simultaneous word reads/writes or byte-select operations via BHE/ BLE.
WE Write Enable Input Active LOW; initiates write cycle only when CE and OE are valid; latches data on rising edge of WE.
OE Output Enable Input Active LOW; enables read data onto I/O bus; places I/Os in HI-Z when deasserted or device deselected.
CE / CE1 & CE2 Chip Enable Inputs Single CE mode: CE active LOW; Dual CE mode: CE1 LOW + CE2 HIGH required for access; deselects entire device otherwise.
BHE / BLE Byte Enable Inputs BHE controls upper byte (I/O8–I/O15); BLE controls lower byte (I/O0–I/O7); both must be active for full-word writes.
ERR Error Indication Output Open-drain output asserted HIGH during single-bit correction; requires external pull-up; not present on non-"E" variants.
VCC / VSS Power Supply / Ground VCC accepts 2.2–3.6 V; dual VSS balls improve noise immunity and reduce ground bounce in high-speed operation.

Key Features

Feature Design Value
Embedded ECC Logic On-die encoder/decoder corrects single-bit errors per read without CPU intervention or additional memory overhead.
Ultra-Low Standby Power 3.5 µA typical ISB2 enables multi-year operation in battery-powered remote sensors or backup memory applications.
TTL-Compatible I/O VIH/VIL thresholds match legacy 3.3 V logic families; eliminates level-shifter requirements in mixed-voltage systems.
Dual-Voltage Operation Valid across 2.2–3.6 V range; supports both 2.5 V and 3.3 V system rails without derating or timing penalty.
Byte-Write Selectivity Independent BHE/ BLE control allows precise 8-bit updates to memory-mapped peripherals or configuration registers.

Applications

Industrial PLC Memory Buffer Medical Device Firmware Storage

Use Scenario: Storing runtime configuration and sensor calibration tables in programmable logic controllers exposed to wide ambient temperature swings.

IC Role / Device Role / Timing Role: Nonvolatile shadow RAM holding critical operational parameters; accessed synchronously at ≤22 MHz with ECC-protected reads.

Use Value: Prevents silent data corruption in long-duration deployments where memory bit flips could cause unsafe actuator behavior.

Use Scenario: Holding boot firmware and diagnostic code in portable ultrasound units powered by rechargeable Li-ion batteries.

IC Role / Device Role / Timing Role: Primary code-execution SRAM with ECC-enabled fetch cycles; operates at 3.3 V with <4 µA quiescent draw during sleep mode.

Use Value: Extends battery life beyond 72 hours in standby while guaranteeing firmware integrity across thousands of power cycles.

Avionics Data Logger Railway Signaling Controller

Use Scenario: Capturing flight parameter snapshots in black-box recorders subject to vibration, EMI, and thermal shock.

IC Role / Device Role / Timing Role: High-reliability buffer memory with ERR pin tied to fault-monitoring FPGA; 45 ns access meets deterministic latency budgets.

Use Value: Enables automatic error logging and corrective action before corrupted data propagates to downstream safety-critical subsystems.

Use Scenario: Storing interlocking logic state tables in trackside signaling cabinets operating continuously at –40 °C to +85 °C.

IC Role / Device Role / Timing Role: Industrial-grade SRAM with guaranteed 2.2–3.6 V operation and ECC correction; interfaced to ARM Cortex-M7 via 16-bit parallel bus.

Use Value: Eliminates need for external error-checking software layers, reducing certification effort for SIL-4 compliant railway control systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS62WV25616BLL-45NLI No embedded ECC; relies on external controller for error handling; 45 ns access, 2.7–3.6 V only. Lacks hardware-level error reporting; requires firmware integration of Hamming code routines. Select when cost sensitivity outweighs ECC assurance and host processor has spare cycles for software ECC.
Micron MT45W8MW16BGX-45IT Includes ECC but uses separate syndrome bits; ERR signal not provided; 45 ns, 1.7–1.95 V core + 3.0 V I/O. Requires dual-supply design and external logic to interpret syndrome outputs for correction status. Prefer when migrating from legacy Micron platforms with existing ECC infrastructure and layout constraints.

Compared with IS62WV25616BLL-45NLI and MT45W8MW16BGX-45IT, CY62146G30-45BVXIT uniquely integrates autonomous ECC correction with a dedicated ERR output, eliminating host-side computation and enabling immediate fault visibility in safety-augmented systems.

Availability

CY62146G30-45BVXIT is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical device firmware storage, avionics data loggers, and railway signaling controllers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY62146G30-45BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications markets, with emphasis on low-power, robust timing, and functional safety.

CY62146G30-45BVXIT belongs to the MoBL® (Mobile Low-power) SRAM product line, engineered specifically for battery-sensitive and ECC-dependent embedded systems where data integrity and standby efficiency are co-primary requirements.

FAQ

Does CY62146G30-45BVXIT support automatic write-back after ECC correction?

No. Per Cypress Document 001-95420 Rev. *E Note 2, this device does not support automatic write-back on error detection. Corrected data remains in the read path only; the original memory location retains the uncorrected value unless explicitly rewritten by the host system.

What is the function of the ERR pin, and how is it electrically driven?

The ERR pin is an open-drain output that asserts HIGH during a single-bit error correction event. It requires an external pull-up resistor (typically 4.7 kΩ to VCC) and remains inactive (HIGH-Z) otherwise. Its assertion duration matches the read cycle time and is synchronized to the OE-controlled data window.

Can CY62146G30-45BVXIT operate at 1.8 V supply voltage?

No. This variant (CY62146G30-45BVXIT) is rated for 2.2 V to 3.6 V only. The 1.65–2.2 V speed grade is designated as CY62146G18; using 1.8 V on this part violates the specified operating range and may result in timing violations or ECC failure.

How are NC pins handled in the 48-ball VFBGA package?

NC pins (e.g., balls A16, C1, D1, E1, F1, G1, H1, H2, H3, H4, H5, H6) are not bonded to the die and serve no internal function. They are reserved for future density expansion or mechanical reinforcement and must remain unconnected on PCB layout per Cypress specification.

CY62146G30-45BVXIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
MOBL™
Package/Case:
48-VFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
2.2V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-VFBGA (6x8)

CY62146G30-45BVXIT FAQ

1.How can I place an order for CY62146G30-45BVXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62146G30-45BVXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62146G30-45BVXIT reliable?

The price and inventory of CY62146G30-45BVXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62146G30-45BVXIT is usually 5 days.

3.What payment methods are accepted for CY62146G30-45BVXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62146G30-45BVXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62146G30-45BVXIT?

CY62146G30-45BVXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62146G30-45BVXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62146G30-45BVXIT?

For technical support, including CY62146G30-45BVXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62146G30-45BVXIT requirements.

6.How does Aetrix verify that CY62146G30-45BVXIT is sourced from the original manufacturer or authorized distributors?

All CY62146G30-45BVXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62146G30-45BVXIT meets industry standards.

7.What is the process for return or replacement of CY62146G30-45BVXIT?

All CY62146G30-45BVXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62146G30-45BVXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62146G30-45BVXIT part is unused and in its original packaging.

Return procedure for CY62146G30-45BVXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY62146G30-45BVXIT Tags

  • CY62146G30-45BVXIT
  • CY62146G30-45BVXIT PDF
  • CY62146G30-45BVXIT Datasheet
  • CY62146G30-45BVXIT Specifications
  • CY62146G30-45BVXIT Images
  • Infineon Technologies
  • Infineon Technologies CY62146G30-45BVXIT
  • Buy CY62146G30-45BVXIT
  • CY62146G30-45BVXIT Price
  • CY62146G30-45BVXIT Distributor
  • CY62146G30-45BVXIT Supplier
  • CY62146G30-45BVXIT Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER