Infineon Technologies CY62146G30-45ZSXA

Overview

CY62146G30-45ZSXA from Infineon Technologies is a 4 Mbit (512K × 8) asynchronous CMOS static RAM with parallel interface, 45 ns access time, 3.3 V supply voltage, and industrial temperature range (–40°C to +85°C), used in embedded controllers and legacy industrial memory subsystems.

For engineers reviewing the CY62146G30-45ZSXA datasheet, CY62146G30-45ZSXA pinout, CY62146G30-45ZSXA application, or CY62146G30-45ZSXA equivalent, key selection criteria include access time consistency under full VCC tolerance, byte-wide data bus compatibility, and TSOP II footprint support for space-constrained PCB layouts.

Technical Context

This SRAM implements standard asynchronous read/write timing with separate CE#, OE#, and WE# control signals, supporting no-wait-state operation at 45 ns when VCC = 3.3 V ± 0.3 V. It uses NMOS-compatible input thresholds and TTL-compatible output drive strength (IOH = –2.0 mA, IOL = 2.4 mA).

Internal circuitry includes automatic power-down during deselection (CE# high), low standby current (≤1 μA at VCC = 3.3 V), and full data retention down to 2.0 V. No internal refresh or clocking is required - operation is purely address-data-control synchronous.

Key Specifications

Pinout & Package

44-pin Thin Small Outline Package (TSOP II), 400 mil width, JEDEC MO-141AC compliant, body height 1.2 mm, lead pitch 0.8 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous parallel SRAM applications.

Compared with IS62WV5128BLL-45NLI and S7R4008-45PL, CY62146G30-45ZSXA uniquely guarantees full 45 ns timing and ≤1 μA standby across –40°C to +85°C at 3.3 V ± 0.3 V, making it the sole option qualified for harsh-environment industrial control.

Availability

CY62146G30-45ZSXA is available at Aetrix Electronics and suitable for industrial PLCs, legacy medical devices, automotive body control modules, and avionics display subsystems requiring stable component supply over extended product lifecycles.

Supply support for CY62146G30-45ZSXA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q100.

CY62146G30 belongs to Infineon's legacy parallel SRAM product line, designed specifically for drop-in replacement of obsolete 3.3 V fast SRAMs in long-lifecycle industrial and transportation systems.

FAQ

Is CY62146G30-45ZSXA pin-compatible with CY62146EV30-45ZSXI?

No. CY62146EV30-45ZSXI uses a different internal architecture with enhanced voltage tolerance (2.2–3.6 V) and modified timing parameters. Although both are 44-pin TSOP II packages, CE#/OE#/WE# setup/hold times differ, and the EV variant requires updated timing margin analysis in existing designs.

Does this SRAM support battery backup operation?

CY62146G30-45ZSXA retains data down to VCC = 2.0 V, enabling integration with external lithium coin-cell backup circuits. However, it has no built-in battery switchover logic - external diode-or or power-path controller is required to manage VCC/BAT transitions.

Can it be used with 5 V microcontrollers?

No. Input thresholds are specified for 3.3 V logic levels (VIH = 2.0 V min, VIL = 0.8 V max); direct connection to 5 V MCU buses risks overvoltage damage to inputs and violates absolute maximum ratings. Level translation is mandatory.

What is the maximum allowed clock frequency for read/write cycling?

This is an asynchronous SRAM - it has no clock input. Maximum sustained cycle rate is determined by tCYC (cycle time) = 45 ns (read) or 55 ns (write), yielding up to ~22.2 MHz read bursts and ~18.2 MHz write bursts under ideal bus timing conditions.