Infineon Technologies CY62146G30-45ZSXI

Overview

CY62146G30-45ZSXI from Cypress Semiconductor is a 4-Mbit (256K × 16) MoBL® SRAM with embedded single-bit error-correcting code (ECC), TTL-compatible I/O, and an ERR output pin for real-time error indication. It operates at 45 ns access time across 2.2–3.6 V supply, draws only 3.5 µA typical standby current, and is packaged in a 48-ball VFBGA for space-constrained industrial memory subsystems.

For engineers reviewing the CY62146G30-45ZSXI datasheet, CY62146G30-45ZSXI pinout, CY62146G30-45ZSXI application, or CY62146G30-45ZSXI equivalent, this device supports byte-level write control via BHE/ BLE, ECC-enabled data integrity in mission-critical buffers, and dual-chip-enable addressing for multi-bank memory expansion.

Technical Context

This SRAM integrates dedicated ECC encoder/decoder logic within the memory array path, performing on-the-fly single-bit error correction during read cycles and asserting the ERR pin high upon detection. Its architecture separates row/column decoding, sense amplification, and ECC processing to maintain deterministic 45 ns timing under all valid V_CC and temperature conditions.

The device supports two chip enable configurations (single CE or dual CE1/CE2), independent byte write enables (BHE for I/O8–I/O15, BLE for I/O0–I/O7), and HI-Z tri-state control on all I/Os when deselected - enabling clean bus sharing in multiprocessor or FPGA-based systems without external bus transceivers.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), JEDEC MO-249 compliant, 6.0 mm × 8.0 mm body, 0.8 mm ball pitch, lead-free (RoHS-compliant).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS61WV25616EDBLL-10MLI and AS6C4008-55TIN, CY62146G30-45ZSXI uniquely delivers hardware-accelerated ECC with interrupt-capable ERR signaling in a 16-bit bus format - making it the sole option among these three for zero-software-overhead data integrity in industrial and avionics memory buffers.

Availability

CY62146G30-45ZSXI is available at Aetrix Electronics and suitable for industrial PLC data buffers, medical imaging frame stores, avionics health monitor caches, and test & measurement instrument memory requiring stable component supply across extended product lifecycles.

Supply support for CY62146G30-45ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-reliability memory, PSoC programmable SoCs, and USB/USB-C solutions for industrial and automotive markets.

CY62146G30-45ZSXI belongs to the MoBL® (Mobile Bit-Low-power) SRAM product line, engineered for ultra-low standby power and ECC-enhanced data integrity in harsh-environment embedded systems.

FAQ

Does CY62146G30-45ZSXI support automatic write-back after ECC correction?

No. The device performs single-bit error correction during read cycles and asserts the ERR pin, but does not automatically rewrite the corrected data back to the memory cell. Host firmware must initiate a separate write cycle if persistent correction is required. This behavior is explicitly documented in the datasheet Note 2 on page 1.

What is the function of the NC pins in the 48-ball VFBGA package?

The NC (No Connect) pins - located at balls C3, D3, and E3 - are not bonded to the die and serve no electrical function. They are reserved for potential future use in higher-density derivatives and may be left unconnected or tied to ground per board layout best practices; they must not be used for signal routing or voltage reference.

Can CY62146G30-45ZSXI operate reliably at 3.3 V?

Yes. The device is fully specified and tested for operation across 2.2 V to 3.6 V, including 3.3 V nominal supply. All AC and DC parameters - including 45 ns access time and 3.5 µA standby current - are guaranteed at 3.3 V and –40°C to +85°C per the Industrial grade operating range.

Is the ERR pin actively driven or open-drain?

The ERR pin is open-drain with internal pull-down. It asserts HIGH (open-drain pulled up externally) during ECC correction events and remains LOW otherwise. An external pull-up resistor (typically 4.7 kΩ to V_CC) is required for proper logic-level signaling to interrupt controllers or status registers.