Infineon Technologies CY62146G30-45ZSXIT

Overview

CY62146G30-45ZSXIT from Cypress Semiconductor is a 4-Mbit (256K × 16) MoBL® Static RAM with embedded single-bit error-correcting code (ECC), operating at 45 ns access time across 2.2–3.6 V supply, featuring ERR output pin, ultra-low 3.5 µA typical standby current, and TTL-compatible I/Os - deployed in industrial-grade memory subsystems requiring data integrity in avionics control units.

For engineers reviewing the CY62146G30-45ZSXIT datasheet, CY62146G30-45ZSXIT pinout, CY62146G30-45ZSXIT application, or CY62146G30-45ZSXIT equivalent, key selection criteria include ECC-enabled reliability, dual-chip-enable support, 48-ball VFBGA package compatibility, and voltage-flexible operation across 2.2–3.6 V rails for legacy and mixed-voltage embedded systems.

Technical Context

This SRAM integrates on-die ECC encoding/decoding logic that detects and corrects single-bit errors during read cycles, signaled via the dedicated ERR output pin asserted HIGH. Its architecture supports byte-level writes using BHE/ BLE controls and full 16-bit parallel I/O access with address decoding up to A0–A17.

The device operates in industrial temperature range (–40°C to +85°C) with three selectable V_CC ranges; this variant is specified for 2.2–3.6 V, delivering 45 ns access time at f_max = 22.22 MHz while maintaining ≤20 mA active current and ≤8.7 µA max standby current.

Key Specifications

Pinout & Package

48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package, 6 mm × 8 mm body, 0.8 mm ball pitch, RoHS-compliant, lead-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS62WV25616BLL-45NLI and MT45W8MW16BGX-45IT, CY62146G30-45ZSXIT delivers verified on-die ECC correction with zero software overhead, deterministic 45 ns timing, and direct replacement capability in existing 16-bit parallel SRAM footprints - critical for safety-critical updates without architectural change.

Availability

CY62146G30-45ZSXIT is available at Aetrix Electronics and suitable for avionics flight control memory, railway signaling data buffer, and medical imaging frame store applications requiring stable component supply across extended product lifecycles.

Supply support for CY62146G30-45ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-reliability memory, PSoC programmable systems-on-chip, and USB/USB-C solutions.

This device belongs to the MoBL® (Mobile Bit-Like) SRAM product line, engineered for ultra-low-power, ECC-enhanced memory in mission-critical industrial and transportation systems where data integrity cannot be compromised.

FAQ

Does CY62146G30-45ZSXIT support automatic write-back after ECC correction?

No. The device performs single-bit error correction transparently during read cycles and asserts the ERR pin, but does not automatically rewrite corrected data to the memory array. Write-back must be handled externally by the system controller if persistent correction is required.

What is the function of the NC pins in the 48-ball VFBGA package?

NC (No Connect) pins - including balls at positions A16, C2, D2, E2, F2, G2, H2, and others - are unconnected to the silicon die and serve no electrical function. They may be used for mechanical stability or future address expansion in higher-density derivatives, but must remain unconnected in this design.

Can CY62146G30-45ZSXIT operate at 1.8 V?

No. This variant is rated only for 2.2 V to 3.6 V operation. While earlier CY62146G(E)18 variants support 1.65–2.2 V, the "30" suffix explicitly denotes the 2.2–3.6 V speed grade; operation below 2.2 V violates datasheet specifications and risks timing failure or data corruption.

How is the ERR pin electrically configured and what load can it drive?

The ERR pin is an open-drain output requiring an external pull-up resistor. Per datasheet Figure 17, it sinks up to 1.6 mA at VOL ≤ 0.4 V (VCC = 3.0 V), supporting direct connection to standard CMOS inputs or interrupt lines with ≤10 kΩ pull-up to VCC or 3.3 V rail.