Infineon Technologies CY62146G-45ZSXIT

Overview

CY62146G-45ZSXIT from Cypress Semiconductor is a 4-Mbit (256K × 16) MoBL® SRAM with embedded single-bit error-correcting code (ECC), TTL-compatible I/Os, and ERR output pin for real-time error indication. It operates at 45 ns access time across 2.2–3.6 V or 4.5–5.5 V supply ranges, with ultra-low standby current (max 8.7 µA), and is packaged in a 48-ball VFBGA for space-constrained industrial memory subsystems.

For engineers reviewing the CY62146G-45ZSXIT datasheet, CY62146G-45ZSXIT pinout, CY62146G-45ZSXIT application, or CY62146G-45ZSXIT equivalent, this device supports dual-chip-enable addressing, byte-level write control via BHE/ BLE, ECC-enabled data integrity in safety-critical buffers, and deterministic ERR assertion on single-bit correction events.

Technical Context

This SRAM integrates dedicated ECC encoder/decoder logic adjacent to the memory array, enabling automatic detection and correction of single-bit errors during read cycles without CPU intervention. The ERR pin asserts HIGH only when correction occurs - no automatic write-back is performed, preserving deterministic timing behavior.

It supports two V_CC operating windows (2.2–3.6 V and 4.5–5.5 V), with full AC/DC specifications guaranteed in both; operation between 3.6–4.5 V is not characterized. Dual CE architecture (CE1/CE2) enables hierarchical memory mapping, while BHE/ BLE allow independent upper/lower byte writes to 16-bit words.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6.0 mm × 8.0 mm body, 0.5 mm ball pitch, JEDEC MO-276AA compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS62WV25616BLL-45NLI and MT45W8MW16BGX-45 IT:D, CY62146G-45ZSXIT uniquely delivers pin-compatible, hardware-transparent ECC correction with observable ERR signaling - eliminating software latency and controller dependency while maintaining simple parallel SRAM timing.

Availability

CY62146G-45ZSXIT is available at Aetrix Electronics and suitable for industrial PLC data buffers, medical imaging frame stores, and aerospace avionics logging requiring stable component supply, long-term lifecycle support, and guaranteed ECC functionality.

Supply support for CY62146G-45ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications infrastructure markets.

CY62146G belongs to the MoBL® (Mobile Binary Logic) SRAM product line, engineered for ultra-low-power, ECC-enhanced volatile memory in mission-critical embedded systems where data integrity and supply stability are non-negotiable.

FAQ

Does CY62146G-45ZSXIT support automatic write-back after ECC correction?

No. The device performs single-bit error correction transparently during read operations but does not automatically rewrite the corrected data back to the memory array. The corrected value appears on I/O lines, and the ERR pin pulses HIGH to indicate correction occurred. System firmware must initiate any desired write-back if persistent correction is required.

What is the function of the ERR pin, and how is it electrically driven?

The ERR pin is an open-drain output that asserts HIGH (pulled up externally) only when a single-bit error is detected and corrected during a read cycle. It remains LOW otherwise. No internal pull-up is provided; a 4.7 kΩ external pull-up to V_CC is required per datasheet recommendations for proper logic-level signaling.

Can CY62146G-45ZSXIT operate reliably at 3.8 V?

No. Datasheet specifications are explicitly not guaranteed for V_CC in the 3.6–4.5 V range. The device is characterized and warranted only at 2.2–3.6 V and 4.5–5.5 V. Operation at 3.8 V may yield unpredictable timing, increased leakage, or ECC failure - avoid use in this intermediate range.

How does the dual CE architecture (CE1/CE2) differ from single CE operation in practice?

In dual CE mode, the device activates only when CE1 is LOW and CE2 is HIGH - enabling hierarchical decoding in multi-SRAM systems. This avoids bus contention during partial address decoding and simplifies chip selection in large memory maps. Single CE variants (e.g., CY62146G-45ZSXI) use only CE and omit CE2, reducing pin count but limiting topology flexibility.