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Infineon Technologies CY62146GE30-45BVXI

Part No.:
CY62146GE30-45BVXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-VFBGA
Datasheet:
AetrixCY62146GE30-45BVXI.pdf
Description:
IC SRAM 4MBIT PARALLEL 48VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,126

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Product details

Overview

CY62146GE30-45BVXI from Cypress Semiconductor is a 4-Mbit (256K × 16) MoBL® Static RAM with embedded single-bit error-correcting code (ECC), 45 ns access time, 2.2–3.6 V supply range, and ERR output pin for real-time error detection/correction - deployed in industrial-grade memory subsystems for FPGA configuration storage and safety-critical microcontroller data buffers.

For engineers reviewing the CY62146GE30-45BVXI datasheet, CY62146GE30-45BVXI pinout, CY62146GE30-45BVXI application, or CY62146GE30-45BVXI equivalent, key selection criteria include ECC-enabled reliability, dual-voltage operation (2.2–3.6 V), 45 ns timing at full speed, VFBGA-48 package compatibility, and ERR pin behavior during read-cycle correction events.

Technical Context

This SRAM implements a synchronous, byte-selectable memory architecture with dedicated BHE/ BLE controls for independent upper/lower byte writes, and an active-HIGH ERR output that asserts only during successful single-bit error correction - not detection alone. The ECC logic operates transparently within the read path without requiring external logic or software intervention.

It supports both single CE (CE pin only) and dual CE (CE1/CE2) addressing modes, with all I/Os entering high-impedance state when deselected. Data retention is guaranteed down to 1.0 V, enabling low-power suspend modes while preserving memory contents across brown-out conditions.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Size4 Mbit (256K words × 16 bits) - provides 512 KB of parallel-access data storage with word-wide I/O interface
Access Time45 ns - enables reliable interfacing with 22.22 MHz bus clocks in high-speed microcontroller or FPGA memory-mapped peripherals
Supply Voltage Range2.2 V to 3.6 V - compatible with modern low-voltage SoC I/O domains and eliminates need for level-shifting circuitry
Standby CurrentMax 8.7 µA - supports ultra-low-power sleep states in battery-backed industrial controllers and portable instrumentation
ECC FunctionEmbedded single-bit error correction with ERR pin assertion - delivers hardware-level data integrity without CPU overhead or firmware dependency
Data Retention1.0 V minimum - maintains stored data during deep-sleep or backup-battery operation without refresh
Operating Temperature–40 °C to +85 °C - qualified for industrial environments including motor drives, PLCs, and edge sensor nodes

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant, moisture sensitivity level 3.

Pin/Terminal Circuit Role Design Meaning
A0–A17Address Inputs18-bit address bus supporting full 256K-word addressing; no internal address multiplexing required
I/O0–I/O15Bidirectional Data Bus16-bit parallel interface; supports simultaneous word-wide or byte-selectable (via BHE/ BLE) reads/writes
CEChip EnableSingle-chip-enable mode: device selected when LOW; all I/Os enter HI-Z when HIGH
WEWrite EnableActive-LOW control initiating write cycle; latches data on rising edge of WE when CE and OE are asserted
OEOutput EnableActive-LOW control enabling read data onto I/O lines; does not affect ECC or ERR behavior
BHE / BLEByte Enable ControlsBHE enables I/O8–I/O15 (upper byte); BLE enables I/O0–I/O7 (lower byte); both required for full-word access
ERRError Indication OutputOpen-drain, active-HIGH signal asserted only during successful single-bit correction event in read cycle
VCC / VSSPower / GroundDual VCC pins (Balls A16, D1) and multiple VSS balls ensure low-noise power delivery and signal integrity

Key Features

Feature Design Value
Integrated ECC engineHardware-based single-bit error correction with zero latency impact on read cycles and no software driver requirement
Multi-voltage supportOperates across 2.2–3.6 V range without external regulators - simplifies power architecture in mixed-voltage systems
Ultra-low standby current8.7 µA maximum ISB2 enables >1-year battery life in always-on monitoring devices using coin-cell backup
ERR pin signalingDedicated output confirms correction completion - allows system-level logging or fail-safe state transitions without polling
1.0 V data retentionPreserves memory contents during brown-out or controlled power-down, eliminating need for external capacitor hold-up

Applications

Industrial PLC Data Buffer FPGA Configuration Storage

Use Scenario: Real-time I/O data buffering in programmable logic controllers where transient EMI may corrupt memory bits during cyclic scan execution.

IC Role / Device Role / Timing Role: Primary volatile data buffer with ECC protection; interfaces directly to ARM Cortex-M7 bus at 22 MHz with 45 ns timing margin.

Use Value: Prevents silent data corruption in control loop variables - eliminates risk of undetected erroneous actuator commands due to single-event upsets.

Use Scenario: Storing partial reconfiguration bitstreams for Xilinx Zynq Ultrascale+ RFSoCs in radar beamforming subsystems.

IC Role / Device Role / Timing Role: External configuration memory mapped to PS-side AXI HP port; accessed during dynamic partial reconfiguration sequences.

Use Value: Ensures bitstream integrity across thermal cycling and voltage droop - avoids FPGA configuration failure or metastability-induced logic lockup.

Medical Infusion Pump Memory Automotive ADAS Sensor Hub Cache

Use Scenario: Storing calibrated dosage parameters and runtime therapy logs in Class II medical infusion pumps with battery backup.

IC Role / Device Role / Timing Role: Non-refreshed SRAM holding critical therapy data; retains contents at 1.0 V during main power loss.

Use Value: Meets IEC 62304 SW safety requirements for data integrity - eliminates need for redundant checksum validation in safety-critical memory paths.

Use Scenario: Caching pre-processed camera and radar fusion metadata in Tier-1 automotive sensor hubs before CAN FD transmission.

IC Role / Device Role / Timing Role: Low-latency cache between SoC vision processor and communication controller; operates at 2.5 V nominal supply.

Use Value: Mitigates single-event functional interrupts (SEFI) in radiation-prone under-hood environments - maintains ADAS feature availability during transient ionizing events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS62WV25616BLL-45NLINo embedded ECC; requires external error-checking logic or software CRC; 45 ns access, 2.5–3.6 V onlyLacks hardware-level correction; increases firmware complexity and latency for error handlingSelect when cost sensitivity outweighs reliability requirements and system can tolerate uncorrected soft errors
Micron MT45W8MW16BGX-45IT:DDDR2 SDRAM with optional ECC; requires clocked interface, refresh management, and higher power; 45 ps tAANot pin-compatible; demands PHY-level timing control and memory controller supportSelect only when migrating to higher-density, lower-cost DRAM and system already includes DDR2 controller infrastructure

Compared with IS62WV25616BLL-45NLI and MT45W8MW16BGX-45IT:D, CY62146GE30-45BVXI uniquely delivers transparent, zero-overhead ECC correction in a simple parallel SRAM interface - making it optimal for safety-aware embedded systems where deterministic latency and minimal software footprint are mandatory.

Availability

CY62146GE30-45BVXI is available at Aetrix Electronics and suitable for industrial PLCs, medical infusion pumps, automotive ADAS sensor hubs, and FPGA configuration storage requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for CY62146GE30-45BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and IoT applications, with emphasis on low-power, robust interface IP, and functional safety compliance.

CY62146GE belongs to the MoBL® (Mobile Bit-Like) SRAM product line - engineered specifically for battery-sensitive and mission-critical embedded systems needing ECC-enhanced data integrity without performance penalty or design complexity.

FAQ

Does CY62146GE30-45BVXI support automatic write-back after error correction?

No. The device performs single-bit error correction transparently during read cycles but does not automatically rewrite the corrected data back to the memory array. The corrected value appears on I/O lines, and ERR asserts, but the original corrupted bit remains unmodified in the array unless explicitly rewritten by the host system.

What is the function of the ERR pin, and when does it assert?

The ERR pin is an open-drain output that goes HIGH only when a single-bit error is both detected and successfully corrected during a read operation. It does not assert for multi-bit errors or uncorrectable events, and remains inactive during normal (error-free) reads or writes.

Can CY62146GE30-45BVXI operate at 1.8 V?

No. This variant (CY62146GE30-45BVXI) is specified for 2.2 V to 3.6 V operation only. The 1.65–2.2 V range applies only to the "18" speed grade (e.g., CY62146GE18), not the "30" grade. Operating below 2.2 V violates datasheet specifications and risks timing violations or ECC failure.

Is the VFBGA-48 package lead-free and RoHS-compliant?

Yes. The "X" suffix in CY62146GE30-45BVXI denotes lead-free (Pb-free), RoHS-compliant packaging per JEDEC J-STD-020 moisture sensitivity level 3, with peak reflow temperature of 260 °C and compatible with standard SnAgCu solder profiles.

CY62146GE30-45BVXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
MOBL™
Package/Case:
48-VFBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
2.2V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-VFBGA (6x8)

CY62146GE30-45BVXI FAQ

1.How can I place an order for CY62146GE30-45BVXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62146GE30-45BVXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62146GE30-45BVXI reliable?

The price and inventory of CY62146GE30-45BVXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62146GE30-45BVXI is usually 5 days.

3.What payment methods are accepted for CY62146GE30-45BVXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62146GE30-45BVXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62146GE30-45BVXI?

CY62146GE30-45BVXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62146GE30-45BVXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62146GE30-45BVXI?

For technical support, including CY62146GE30-45BVXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62146GE30-45BVXI requirements.

6.How does Aetrix verify that CY62146GE30-45BVXI is sourced from the original manufacturer or authorized distributors?

All CY62146GE30-45BVXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62146GE30-45BVXI meets industry standards.

7.What is the process for return or replacement of CY62146GE30-45BVXI?

All CY62146GE30-45BVXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62146GE30-45BVXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62146GE30-45BVXI part is unused and in its original packaging.

Return procedure for CY62146GE30-45BVXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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