Infineon Technologies CY62146GE30-45BVXIT
- Part No.:
- CY62146GE30-45BVXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62146GE30-45BVXIT.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:

- Shipping:

Inventory:4,180
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY62146GE30-45BVXIT from Cypress Semiconductor is a 4-Mbit (256K × 16) MoBL® SRAM with embedded single-bit error-correcting code (ECC), 45 ns access time, 2.2–3.6 V supply range, and ERR output pin for real-time error detection/correction - used in industrial control memory buffers requiring data integrity under radiation-prone or long-term reliability conditions.
For engineers reviewing the CY62146GE30-45BVXIT datasheet, CY62146GE30-45BVXIT pinout, CY62146GE30-45BVXIT application, or CY62146GE30-45BVXIT equivalent, key selection criteria include ECC-enabled read-cycle error signaling, dual-voltage operation (2.2–3.6 V), 45 ns timing at full speed, ultra-low 3.5 µA typical standby current, and VFBGA-48 package compatibility with high-density PCB layouts.
Technical Context
This SRAM implements on-die ECC encoding/decoding logic that detects and corrects single-bit errors during every read cycle, with dedicated ERR pin assertion (HIGH) indicating correction event - no automatic write-back support. Memory array is organized as 256K words × 16 bits, accessed via 18-bit address bus (A0–A17) and bidirectional 16-bit I/O (I/O0–I/O15).
It supports both single CE (CE active LOW) and dual CE (CE1 LOW + CE2 HIGH) addressing modes, byte-level writes via BHE/BLE controls, and TTL-compatible I/O levels across its rated voltage ranges. Standby power is minimized using deep sleep circuitry enabling 1.0-V data retention without refresh.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 4 Mbit (256K × 16) - provides 512 KB of word-accessible volatile storage |
| Access Time | 45 ns - guarantees maximum read latency at 2.2–3.6 V and fmax = 22.22 MHz |
| Voltage Range | 2.2 V to 3.6 V - supports modern low-voltage microcontroller interfaces without level-shifting |
| Standby Current | Typ. 3.5 µA / Max. 8.7 µA - enables battery-backed operation for >10-year retention in industrial logging |
| ECC Function | Single-bit error detection & correction per read - reduces uncorrectable failure rate by >99.9% in soft-error environments |
| ERR Pin | Dedicated open-drain output asserted HIGH on correction - allows host MCU to log or flag memory integrity events |
| Data Retention | 1.0 V minimum - maintains stored data during brown-out or controlled power-down sequences |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus selecting one of 256K memory locations |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface supporting byte (BHE/BLE) or full-word transfers |
| CE | Chip Enable (Single CE mode) | Active-LOW enable for device selection in single-chip-enable configuration |
| WE | Write Enable | Active-LOW signal initiating write cycle; latches data on rising edge of WE |
| OE | Output Enable | Active-LOW control for placing I/O pins in HI-Z or driving read data |
| BHE / BLE | Byte High/Low Enable | Independent control of upper (I/O8–I/O15) or lower (I/O0–I/O7) byte writes/reads |
| ERR | Error Indication Output | Open-drain output asserted HIGH when single-bit error is detected and corrected |
| VCC / VSS | Power / Ground | Core supply (2.2–3.6 V) and ground connections; dual VSS balls for noise reduction |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC engine | On-die Hamming-code encoder/decoder corrects 1-bit errors per 16-bit word without software overhead |
| Ultra-low ISB2 | 8.7 µA max standby current enables >5-year battery life in always-on monitoring nodes |
| Multi-voltage support | Operates across 2.2–3.6 V range - compatible with 2.5 V and 3.3 V system rails without regulators |
| TTL-compatible I/O | VIH/VIL thresholds meet legacy microcontroller GPIO requirements without external translators |
| 1.0-V data retention | Maintains valid data down to 1.0 V VCC - supports graceful shutdown and backup power switchover |
Applications
| Industrial PLC Memory Buffer | Medical Diagnostic Data Cache |
|---|---|
|
Use Scenario: Real-time buffering of sensor acquisition streams in programmable logic controllers with deterministic scan cycles. IC Role / Device Role / Timing Role: Volatile high-speed memory storing intermediate process values between CPU fetches; ECC prevents silent data corruption in EMI-heavy factory floors. Use Value: Eliminates need for periodic CRC checks or redundant memory mirroring - reduces firmware complexity and CPU load by 30%. |
Use Scenario: Temporary storage of raw imaging frames prior to FPGA-based reconstruction in portable ultrasound systems. IC Role / Device Role / Timing Role: Low-latency, error-resilient frame buffer interfacing directly with image sensor controller and processing pipeline. Use Value: Ensures pixel integrity during high-speed burst capture - avoids artifact generation caused by cosmic-ray-induced bit flips. |
| Railway Signaling Controller | Avionics Health Monitor |
|
Use Scenario: Storing safety-critical state variables and watchdog timers in EN 5012x-certified signaling hardware. IC Role / Device Role / Timing Role: Fail-operational memory holding validated control flags and diagnostic logs; ERR pin feeds into SIL-3 fault reporting chain. Use Value: Meets IEC 61508 FMEDA requirements for latent fault detection - reduces FIT rate by 2× vs. non-ECC SRAM. |
Use Scenario: Logging flight parameter snapshots (vibration, temperature, pressure) in DO-160G-compliant health monitoring modules. IC Role / Device Role / Timing Role: Radiation-tolerant scratchpad memory retaining telemetry during high-altitude exposure where SEU rates exceed 10−4/hour. Use Value: Enables continuous 72-hour black-box recording without ECC-related interrupt latency or memory scrubbing overhead. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61WV25616EDBLL-10MLI | No integrated ECC; requires external error-checking logic or software layer | Suitable only where system-level ECC is already implemented in FPGA or SoC | Select if cost sensitivity outweighs reliability requirement and host processor handles ECC |
| ON Semiconductor NVSRAM N25S80A16T | Non-volatile SRAM with auto-store to EEPROM on power loss; no real-time ECC correction | Used where data persistence matters more than runtime error correction (e.g., configuration storage) | Choose when power-fail data retention is primary need, not in-flight memory integrity |
Compared with IS61WV25616EDBLL-10MLI and N25S80A16T, CY62146GE30-45BVXIT uniquely delivers hardware-accelerated, cycle-accurate single-bit error correction with visible ERR signaling - essential for functional safety systems where undetected memory faults violate ASIL-B or SIL-2 requirements.
Availability
CY62146GE30-45BVXIT is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical diagnostic data caches, and railway signaling controllers requiring stable component supply with guaranteed ECC functionality and long-term lifecycle support.
Supply support for CY62146GE30-45BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and aerospace applications.
CY62146GE belongs to the MoBL® (Mobile Bit-Library) SRAM product line, engineered for ultra-low-power, ECC-enhanced volatile memory in mission-critical embedded systems operating across extended temperature and voltage ranges.
FAQ
Does CY62146GE30-45BVXIT support automatic error correction write-back?
No. The device performs single-bit error correction during read cycles and asserts the ERR pin, but does not automatically rewrite the corrected data back to the memory array. Host firmware must initiate any corrective write if persistent correction is required - this design avoids unintended write cycles during read-only operations.
What is the function of the ERR pin during normal (error-free) operation?
During error-free reads, the ERR pin remains in high-impedance (HI-Z) state when not actively driven. It is only asserted HIGH (active) for the duration of the read cycle in which a single-bit error is detected and corrected - no pull-up or pull-down is required externally unless interfacing with open-drain logic.
Can CY62146GE30-45BVXIT operate at 1.8 V?
No. This variant (CY62146GE30-45BVXIT) is rated for 2.2 V to 3.6 V only. The 1.65–2.2 V voltage range applies only to CY62146G(E)18 variants. Operation below 2.2 V violates datasheet specifications and may result in timing violations or ECC failure.
Is the VFBGA-48 package lead-free and RoHS-compliant?
Yes. The "VXIT" suffix indicates a Pb-free, RoHS-compliant 48-ball VFBGA package with NiPdAu surface finish, qualified per JEDEC J-STD-020 moisture sensitivity level 3 (MSL-3), and compatible with standard reflow profiles up to 260 °C peak.
CY62146GE30-45BVXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62146GE30-45BVXIT FAQ
1.How can I place an order for CY62146GE30-45BVXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62146GE30-45BVXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62146GE30-45BVXIT reliable?
The price and inventory of CY62146GE30-45BVXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62146GE30-45BVXIT is usually 5 days.
3.What payment methods are accepted for CY62146GE30-45BVXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62146GE30-45BVXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62146GE30-45BVXIT?
CY62146GE30-45BVXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62146GE30-45BVXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62146GE30-45BVXIT?
For technical support, including CY62146GE30-45BVXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62146GE30-45BVXIT requirements.
6.How does Aetrix verify that CY62146GE30-45BVXIT is sourced from the original manufacturer or authorized distributors?
All CY62146GE30-45BVXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62146GE30-45BVXIT meets industry standards.
7.What is the process for return or replacement of CY62146GE30-45BVXIT?
All CY62146GE30-45BVXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62146GE30-45BVXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62146GE30-45BVXIT part is unused and in its original packaging.
Return procedure for CY62146GE30-45BVXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY62146GE30-45BVXIT Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
Machine vision system guide covering components, inspection workflow, camera and lens selection, FOV, pixel resolution, motion blur, strobe lighting, bandwidth, 2D/3D vision, integration, troubleshooti…
Electronic devices and circuits guide covering passive components, semiconductors, analog and digital circuits, circuit theory, practical calculations, troubleshooting, datasheet selection, and learnin…

