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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Infineon Technologies CY62146GE30-45ZSXIT

Name: CY62146GE30-45ZSXIT
Brand: Infineon Technologies
SKU: CY62146GE30-45ZSXIT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: CY62146GE30-45ZSXIT

Manufacturer:: Infineon Technologies

Category:: Memory

Package:: 44-TSOP (0.400", 10.16mm Width)

Datasheet:: CY62146GE30-45ZSXIT.pdf

Description:: IC SRAM 4MBIT PARALLEL 44TSOP II

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Product details

Overview

CY62146GE30-45ZSXIT from Cypress Semiconductor is a 4-Mbit (256K × 16) MoBL® SRAM with embedded single-bit error-correcting code (ECC), 45 ns access time, 2.2–3.6 V supply range, and ERR output pin for real-time error indication. It operates in industrial temperature range (–40 °C to +85 °C) and is used in mission-critical embedded controllers requiring data integrity assurance.

For engineers reviewing the CY62146GE30-45ZSXIT datasheet, CY62146GE30-45ZSXIT pinout, CY62146GE30-45ZSXIT application, or CY62146GE30-45ZSXIT equivalent, key selection criteria include ECC-enabled reliability, dual-chip-enable support, 48-ball VFBGA package compatibility, and low 3.5 µA typical standby current under industrial voltage and thermal conditions.

Technical Context

This SRAM integrates dedicated ECC encoder/decoder logic that detects and corrects single-bit errors on every read cycle without external logic. The ERR pin asserts HIGH during correction events, enabling system-level fault logging and recovery coordination.

It supports both single-CE (CE active LOW) and dual-CE (CE1 LOW / CE2 HIGH) addressing modes, byte-wide writes via BHE/ BLE control, and TTL-compatible I/Os across 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V V_CC ranges - though the CY62146GE30 variant is specified only for 2.2–3.6 V operation.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Size	4 Mbit (256K words × 16 bits); provides 512 KB of word-addressable, non-refreshing volatile storage.
Access Time	45 ns at V_CC = 2.2–3.6 V; enables direct interfacing with 22.22 MHz bus clocks without wait states.
Supply Voltage	2.2 V to 3.6 V; compatible with modern low-voltage microcontrollers and FPGAs without level-shifting.
Standby Current	Typical 3.5 µA, max 8.7 µA; supports ultra-low-power sleep modes in battery-backed systems.
ECC Function	Embedded single-bit error detection and correction per read; no software overhead or external circuitry required.
ERR Output	Dedicated open-drain output asserted HIGH during correction; enables hardware-triggered diagnostics or NMI generation.
Operating Temp	–40 °C to +85 °C (Industrial grade); qualified for use in automotive body control modules and industrial PLCs.

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
A0–A17	Address Inputs	18-bit address bus supporting full 256K-word decoding; A12–A17 used for row/column selection in internal memory array.
I/O0–I/O15	Bidirectional Data Bus	16-bit parallel interface; supports byte-wide access via BHE (I/O8–I/O15) and BLE (I/O0–I/O7).
CE	Chip Enable (Single CE mode)	Active-LOW enable; device enters standby when HIGH, reducing current to ≤8.7 µA.
WE	Write Enable	Active-LOW write strobe; latches data on I/O lines into addressed location when CE and OE are valid.
OE	Output Enable	Active-LOW read strobe; places I/O lines in HI-Z when deasserted to prevent bus contention.
BHE / BLE	Byte Enable Controls	Independent gating of upper/lower bytes during write or read; enables 8-bit peripheral compatibility.
ERR	Error Indication Output	Open-drain output asserted HIGH during single-bit correction; requires external pull-up for logic-level compatibility.
V_CC, V_SS	Power Supply Pins	Two V_CC and two V_SS balls provide low-impedance power delivery and noise suppression for high-speed operation.

Key Features

Feature	Design Value
Embedded ECC Logic	Hardware-based single-bit error detection and correction on every read cycle - eliminates need for external ECC controller or software overhead.
Ultra-Low Standby Power	3.5 µA typical ISB2 at 2.2–3.6 V enables >1-year battery life in always-on monitoring nodes with periodic wake-up.
Multi-Voltage Compatibility	Validated operation across 2.2–3.6 V range ensures interoperability with ARM Cortex-M4/M7 SoCs and Xilinx Zynq-7000 PS interfaces.
TTL-Compatible I/O	VIH/VIL thresholds meet TTL logic levels at all supported V_CC; simplifies integration with legacy 3.3 V microcontrollers and CPLDs.
ERR Pin Assertion	Real-time hardware flag for error events - allows deterministic fault response without polling or interrupt latency uncertainty.

Applications

Medical Diagnostic Imaging Buffer

Avionics Flight Control Memory

Use Scenario: Stores real-time sensor fusion data from inertial measurement units (IMUs) and GPS receivers in flight management systems.

IC Role / Device Role / Timing Role: Volatile frame buffer with ECC-protected storage for critical navigation vectors; 45 ns access synchronizes with 22 MHz ARINC 429 timing windows.

Use Value: Prevents silent data corruption in airborne computing environments where single-event upsets (SEUs) may occur at altitude.

Use Scenario: Holds configuration tables and calibration coefficients for MRI gradient coil drivers during scan preparation.

IC Role / Device Role / Timing Role: High-integrity scratchpad memory for FPGA-based digital signal processors; ERR pin triggers recalibration if bit-flip detected.

Use Value: Eliminates risk of misaligned magnetic field gradients due to undetected memory errors - directly supporting FDA Class II device reliability requirements.

Railway Signaling Interlocking Logic

Industrial Programmable Logic Controller (PLC)

Use Scenario: Maintains fail-safe state variables for track occupancy detection and signal aspect sequencing in EBI Lock interlocking systems.

IC Role / Device Role / Timing Role: Safety-critical RAM for SIL-3-certified logic execution; ECC ensures integrity of boolean state maps updated at 100 Hz.

Use Value: Meets EN 50129 clause 7.3.2.2 requirement for automatic detection and correction of single-point faults in safety-related memory.

Use Scenario: Caches ladder logic execution stack and I/O mapping registers in modular PLC backplanes operating in harsh factory environments.

IC Role / Device Role / Timing Role: Low-power, wide-temp SRAM for deterministic cyclic scan execution; 3.5 µA standby reduces thermal load in sealed enclosures.

Use Value: Enables extended runtime during brown-out conditions while preserving program state integrity via ECC and 1.0 V data retention capability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ISSI IS61WV25616EDBLL-10MLI	No integrated ECC; requires external error-handling logic or software layer.	Lacks hardware-level error reporting; unsuitable for safety-critical SIL-3 or DO-178C applications.	Select only when cost sensitivity outweighs reliability requirements and system firmware can implement ECC.
Micron MT45W8MW16BGX-107 IT:D	DDR2 SDRAM with optional ECC; requires refresh cycles and complex controller interface.	Higher bandwidth but higher latency and power; incompatible with simple parallel bus microcontrollers.	Choose only for high-throughput buffering where burst transfers justify added controller complexity and power budget.

Compared with IS61WV25616EDBLL-10MLI and MT45W8MW16BGX-107 IT:D, CY62146GE30-45ZSXIT delivers deterministic, zero-overhead ECC correction and true static operation - essential for real-time deterministic systems where refresh cycles or software intervention introduce unacceptable jitter or failure modes.

Availability

CY62146GE30-45ZSXIT is available at Aetrix Electronics and suitable for medical imaging buffers, avionics flight control memory, and railway signaling interlocking logic requiring stable component supply across extended product lifecycles.

Supply support for CY62146GE30-45ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and aerospace applications.

CY62146GE belongs to the MoBL® (Mobile Bitline) SRAM product line, engineered for ultra-low-power, ECC-enhanced volatile memory in safety- and mission-critical embedded systems.

FAQ

Does CY62146GE30-45ZSXIT support automatic write-back after ECC correction?

No. The device performs single-bit error correction during read operations only and does not automatically rewrite corrected data back to the memory array. System firmware must initiate a separate write cycle if persistent correction is required. This behavior is explicitly documented in Note 2 of the datasheet (Rev. *E, p.1).

What is the function of the ERR pin, and how is it electrically configured?

The ERR pin is an open-drain output that asserts HIGH during detection and correction of a single-bit error in the accessed memory location. It requires an external pull-up resistor (typically 4.7 kΩ to V_CC) to generate a valid logic HIGH. The pin remains LOW during normal reads and writes, and is inactive (high-impedance) when the device is deselected.

Can CY62146GE30-45ZSXIT operate at 1.8 V?

No. The "30" suffix denotes the 2.2–3.6 V V_CC speed grade; operation below 2.2 V violates the specified operating range. For 1.65–2.2 V operation, the CY62146G(E)18 variant must be selected. Datasheet Table 1 confirms CY62146GE30 is rated only for 2.2–3.6 V and 4.5–5.5 V ranges.

Is the 48-ball VFBGA package of CY62146GE30-45ZSXIT compatible with standard reflow profiles?

Yes. The package complies with IPC/JEDEC J-STD-020D moisture sensitivity level 3 and supports standard lead-free reflow profiles (peak temperature 260 °C, 60-second duration above 217 °C). Board layout must follow Cypress's recommended padstack and stencil design guidelines in Package Diagrams (p.19) to ensure solder joint reliability.

CY62146GE30-45ZSXIT Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: MOBL™

Package/Case:: 44-TSOP (0.400", 10.16mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Asynchronous

Memory Size:: 4Mbit

Memory Organization:: 256K x 16

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 45ns

Access Time:: 45 ns

Voltage - Supply:: 2.2V ~ 3.6V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 44-TSOP II

CY62146GE30-45ZSXIT FAQ

1.How can I place an order for CY62146GE30-45ZSXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62146GE30-45ZSXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62146GE30-45ZSXIT reliable?

The price and inventory of CY62146GE30-45ZSXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62146GE30-45ZSXIT is usually 5 days.

3.What payment methods are accepted for CY62146GE30-45ZSXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62146GE30-45ZSXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62146GE30-45ZSXIT?

CY62146GE30-45ZSXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62146GE30-45ZSXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62146GE30-45ZSXIT?

For technical support, including CY62146GE30-45ZSXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62146GE30-45ZSXIT requirements.

6.How does Aetrix verify that CY62146GE30-45ZSXIT is sourced from the original manufacturer or authorized distributors?

All CY62146GE30-45ZSXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62146GE30-45ZSXIT meets industry standards.

7.What is the process for return or replacement of CY62146GE30-45ZSXIT?

All CY62146GE30-45ZSXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62146GE30-45ZSXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62146GE30-45ZSXIT part is unused and in its original packaging.

Return procedure for CY62146GE30-45ZSXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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