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Infineon Technologies CY62146GE-45ZSXIT

Part No.:
CY62146GE-45ZSXIT
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
44-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixCY62146GE-45ZSXIT.pdf
Description:
IC SRAM 4MBIT PARALLEL 44TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,820

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Product details

Overview

CY62146GE-45ZSXIT from Cypress Semiconductor is a 4-Mbit (256K × 16) MoBL® Static RAM with embedded single-bit error-correcting code (ECC), TTL-compatible I/O, and an active-HIGH ERR output pin for real-time error detection/correction. It operates across 2.2 V–3.6 V or 4.5 V–5.5 V supply ranges, delivers 45 ns access time, and draws only 3.5 µA typical standby current - deployed in industrial control modules requiring data integrity under extended temperature cycling.

For engineers reviewing the CY62146GE-45ZSXIT datasheet, CY62146GE-45ZSXIT pinout, CY62146GE-45ZSXIT application, or CY62146GE-45ZSXIT equivalent, key selection criteria include ECC-enabled memory reliability, dual-voltage support, TSOP II package compatibility, and ERR signal timing behavior during read cycles.

Technical Context

This SRAM integrates dedicated ECC encoder/decoder logic that automatically detects and corrects single-bit errors within each 16-bit word during read operations, with correction completed before data appears on I/O lines. The ERR pin asserts HIGH only when correction occurs - no automatic write-back is performed.

It supports both single and dual chip enable configurations, byte-level writes via BHE/ BLE, and full 16-bit parallel access. Address range spans A0–A17 (18 address bits), enabling direct mapping to 256K-word memory spaces without external decoding overhead.

Key Specifications

Parameter Value and Actual Design Meaning
Memory size 4 Mbit (256K words × 16 bits) - supports 512 KB of byte-addressable storage with ECC protection per word.
Access time 45 ns - enables synchronous interface with microcontrollers running at ≤22.2 MHz bus frequency.
Supply voltage 2.2 V–3.6 V or 4.5 V–5.5 V - allows drop-in replacement in legacy 5 V and modern low-voltage systems without level-shifting.
Standby current Typical 3.5 µA - reduces power budget in battery-backed or always-on industrial monitoring nodes.
ECC function Single-bit error correction with ERR output assertion - provides deterministic fault indication for system-level logging or fail-safe response.
Operating temperature –40 °C to +85 °C - qualified for industrial-grade deployment without derating.
I/O compatibility TTL-compatible inputs/outputs - interfaces directly with legacy FPGA I/O banks and microcontroller GPIO without translation circuitry.

Pinout & Package

Package: 44-pin TSOP II (Type II, 400 mil width), RoHS-compliant, lead-free.

Pin/Terminal Circuit Role Design Meaning
A0–A17 Address inputs 18-bit address bus supporting full 256K-word addressing; no internal address multiplexing required.
I/O0–I/O15 Bidirectional data bus 16-bit parallel interface; high-impedance state asserted when CE, OE, BHE, and BLE are inactive.
/CE Chip enable (active LOW) Single CE configuration - device enabled only when /CE = LOW; all I/O enter HI-Z on /CE HIGH.
/OE Output enable (active LOW) Controls read data gating; read cycle valid only when /OE and /CE both LOW.
/WE Write enable (active LOW) Initiates write operation; data latched on falling edge with valid address and byte enables.
/BHE Byte high enable (active LOW) Enables write/read of upper byte (I/O8–I/O15); used for 8-bit bus interfacing or partial writes.
/BLE Byte low enable (active LOW) Enables write/read of lower byte (I/O0–I/O7); supports mixed-width peripheral access.
ERR Error indication output Open-drain output asserted HIGH during single-bit correction event; requires external pull-up for logic-level compatibility.
VCC, VSS Power supply pins Dual VCC pins (pins 11 & 34) and dual VSS pins (pins 12 & 33) reduce IR drop and improve noise immunity.

Key Features

Feature Design Value
Embedded ECC engine Hardware-accelerated single-bit error correction per 16-bit word with zero software overhead and no latency penalty on corrected reads.
Ultra-low standby power 3.5 µA typical ISB2 enables >10-year battery life in nonvolatile SRAM backup applications using coin-cell sources.
Dual-voltage operation Supports both 2.2–3.6 V and 4.5–5.5 V rails - eliminates need for separate voltage regulators in mixed-supply systems.
ERR output signaling Dedicated open-drain ERR pin provides unambiguous, cycle-synchronous notification of correction events for diagnostic firmware integration.
TSOP II footprint Industry-standard 44-pin package ensures mechanical and thermal compatibility with existing PCB layouts and reflow profiles.

Applications

Industrial PLC Data Buffer Military Avionics Memory Cache

Use Scenario: Real-time I/O scan buffer in programmable logic controllers where transient radiation or voltage droop may induce bit flips.

IC Role / Device Role / Timing Role: Primary volatile data store holding process image with hardware ECC enforcement on every read cycle.

Use Value: Eliminates need for periodic memory scrubbing routines and prevents silent data corruption in safety-critical control loops.

Use Scenario: Configuration memory cache for FPGAs in airborne flight control computers operating across wide thermal gradients.

IC Role / Device Role / Timing Role: High-reliability SRAM backing up FPGA configuration registers with deterministic error reporting via ERR pin.

Use Value: Enables immediate fault isolation and system-level recovery without requiring redundant memory mirroring or watchdog resets.

Railway Signaling Event Log Medical Diagnostic Imaging Buffer

Use Scenario: Tamper-resistant event logging in track-side signaling units where power interruptions occur during switching operations.

IC Role / Device Role / Timing Role: Battery-backed SRAM storing timestamped fault records with ECC-protected integrity verification.

Use Value: Guarantees forensic log validity after brownout conditions, satisfying EN 50126/50128 SIL-3 compliance requirements.

Use Scenario: Frame buffering in portable ultrasound machines where EMI from transducer pulsing risks memory bit errors.

IC Role / Device Role / Timing Role: Low-latency pixel data staging memory between ADC and DSP pipeline with real-time error correction.

Use Value: Prevents artifact generation in B-mode images caused by undetected memory corruption during high-speed acquisition.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS61WV25616EDBLL-10MLI No integrated ECC; requires external logic or software for error handling; 10 ns faster (10 ns access), but higher 12 mA ICC. Lacks hardware ERR signal; unsuitable where autonomous error reporting is mandatory. Select only if speed outweighs ECC requirement and system firmware can implement correction.
ON Semiconductor NVSRAM N25S80A16T100I Nonvolatile SRAM with auto-store to EEPROM on power loss; no ECC; 100 ns access; 5 V only. Provides data retention without battery; trades speed and ECC for nonvolatility. Choose when persistent storage supersedes real-time error correction in intermittent-power environments.

Compared with IS61WV25616EDBLL-10MLI and N25S80A16T100I, CY62146GE-45ZSXIT uniquely delivers hardware ECC with ERR signaling in a 45 ns, dual-voltage, industrial-temperature SRAM - making it the sole option for applications demanding both deterministic error visibility and low-power operation without nonvolatile overhead.

Availability

CY62146GE-45ZSXIT is available at Aetrix Electronics and suitable for industrial PLC data buffers, avionics configuration caches, and railway signaling event logs requiring stable component supply across extended product lifecycles.

Supply support for CY62146GE-45ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and aerospace applications.

CY62146GE belongs to the MoBL® (Mobile Bitline) SRAM product line, engineered specifically for low-power, ECC-enhanced memory subsystems in mission-critical embedded systems where data integrity cannot be compromised.

FAQ

Does CY62146GE-45ZSXIT support automatic error correction without firmware intervention?

Yes. The device performs single-bit error correction entirely in hardware during each read cycle. When a correctable error is detected, the ECC decoder fixes the data before it reaches the I/O pins, and the ERR pin asserts HIGH to notify the host system. No CPU involvement or software routine is required for correction.

What is the function of the ERR pin, and how should it be interfaced?

The ERR pin is an open-drain output that goes HIGH only when a single-bit error is detected and corrected during a read access. It must be externally pulled up to VCC with a 4.7 kΩ resistor. The signal remains asserted for the duration of the read cycle and deasserts automatically upon completion - no latch or clear is needed.

Can CY62146GE-45ZSXIT operate at 3.3 V, and is ECC guaranteed across that voltage?

Yes - the device is fully specified for 2.2 V–3.6 V operation, including 3.3 V nominal. All ECC functionality, timing parameters, and DC characteristics are guaranteed across this entire range per datasheet Rev. *E. Operation between 3.6 V and 4.5 V is not supported or characterized.

Is the TSOP II package of CY62146GE-45ZSXIT pin-compatible with earlier CY62146G variants?

Yes - the 44-pin TSOP II footprint and pin functions (including /CE, /OE, /WE, BHE, BLE, ERR, and I/O0–I/O15) match identically between CY62146GE-45ZSXIT and CY62146G-45ZSXIT. The only functional difference is the presence of the ERR pin; all other timing and electrical behavior is identical.

CY62146GE-45ZSXIT Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
MOBL™
Package/Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP II

CY62146GE-45ZSXIT FAQ

1.How can I place an order for CY62146GE-45ZSXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62146GE-45ZSXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62146GE-45ZSXIT reliable?

The price and inventory of CY62146GE-45ZSXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62146GE-45ZSXIT is usually 5 days.

3.What payment methods are accepted for CY62146GE-45ZSXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62146GE-45ZSXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62146GE-45ZSXIT?

CY62146GE-45ZSXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62146GE-45ZSXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62146GE-45ZSXIT?

For technical support, including CY62146GE-45ZSXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62146GE-45ZSXIT requirements.

6.How does Aetrix verify that CY62146GE-45ZSXIT is sourced from the original manufacturer or authorized distributors?

All CY62146GE-45ZSXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62146GE-45ZSXIT meets industry standards.

7.What is the process for return or replacement of CY62146GE-45ZSXIT?

All CY62146GE-45ZSXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62146GE-45ZSXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62146GE-45ZSXIT part is unused and in its original packaging.

Return procedure for CY62146GE-45ZSXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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